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Bisphenol A derivative and preparation method thereof and application of bisphenol A derivative in photoetching

A photolithography and photoresist technology, applied in the field of photolithography, can solve the problems of increasing the diffusion of photoacid generators, unable to overcome resolution, performance degradation, etc., and achieve excellent mechanical strength and improve the effect of pattern collapse behavior.

Active Publication Date: 2022-02-22
INST OF CHEM CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In conventional chemically amplified photoresists (CARs), for a given photoresist material / formulation, there is an insurmountable trade-off between resolution, line edge roughness and sensitivity (RLS), namely its It is not possible to optimize all three parameters at the same time
Any two of these three parameters can be improved, but only at the cost of reduced performance of the third parameter
One of the main reasons why it is difficult for CARs to satisfy these three parameters simultaneously is the diffusion of photoacid generators.
Increased photoacid generator diffusion improves CARs sensitivity, but results in lower resolution and more complex effects on line edge roughness (LER)
Reduced photoacid generator diffusion, increased resolution but loss of sensitivity, potentially increased LER

Method used

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  • Bisphenol A derivative and preparation method thereof and application of bisphenol A derivative in photoetching
  • Bisphenol A derivative and preparation method thereof and application of bisphenol A derivative in photoetching
  • Bisphenol A derivative and preparation method thereof and application of bisphenol A derivative in photoetching

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0050] The synthetic preparation of embodiment 1 epoxy compound (I-a)

[0051] Weigh 5.98g (10mmol) of BPA-6OH, 21.50g (66mmol) of Cs 2 CO 3 , into a 150ml three-necked flask in turn, measure 7ml (70mmol) of epibromohydrin, and then add 15ml of N-methylpyrrolidone, and stir at reflux at 50-55°C for 18-24h. After the reaction, the reaction mixture was diluted with chloroform, then washed three times with deionized water, and washed with anhydrous Na 2 CO 3 After drying, it was exchanged in a methanol solvent and dried in vacuum at 60°C to obtain 5.05 g of a light yellow solid epoxy compound (I-a) with a fully protected epoxy group, with a yield of 54%. MALDI-TOF (C 57 h 56 o 12 ), m / z: 932.376. Its TGA diagram is as follows figure 1 shown by figure 1 It can be seen that it has high thermal stability, and only loses 5% of its mass around 370°C.

[0052] Wherein, the structure of raw material BPA-6OH is:

[0053]

[0054] The structure of product epoxy compound (I-a...

Embodiment 2

[0056] The preparation of embodiment 2 containing epoxy compound (I-a) negative photoresist composition

[0057] Weigh 300 mg of the epoxy compound (I-a) which is fully protected by the epoxy group prepared in Example 1, 22.5 mg of the photoacid generator N-hydroxynaphthalimide trifluoromethanesulfonate, and measure the photoresist 10 ml of solvent propylene glycol monomethyl ether acetate (PGMEA) was prepared into a photoresist solution, and after ultrasonic treatment for half an hour, it was filtered three times with a 0.20 μm polytetrafluoroethylene film to prepare a negative photoresist composition.

Embodiment 3

[0058] Embodiment 3 contains the lithography performance of test epoxy compound (I-a) negative photoresist composition

[0059] Prepare a negative photoresist composition of 30mg / ml according to Example 2, select an untreated blank silicon wafer, set the spin coating parameters to 3000rpm / 90s, and set the pre-baking parameters to 80°C / 120s, and measure the film with an ellipsometer The thickness is about 50nm. The 365nm wavelength UV lithography was carried out using a front-side alignment UV lithography machine from ABM Company in the United States. The exposure time was set to 30s, the post-baking parameter was 90°C / 120s, the developing parameter was methyl isobutyl ketone / 30s, and the washing parameter was isopropyl Alcohol / 30s. After exposure, use a Hitachi 8020 scanning electron microscope to collect SEM images. The specific photolithography results are as follows figure 2 shown. Depend on figure 2 It can be seen that the obtained photoresist composition has higher ...

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Abstract

The invention belongs to the technical field of photoetching, and particularly relates to a bisphenol A derivative and a preparation method thereof, and application of the bisphenol A derivative in photoetching. According to the invention, the compound provided by the invention has the advantages of simple molecular structure, controllable molecular weight, simple synthesis steps, high thermal stability, no precipitation in baking, and difficult denaturation in photoetching; the negative molecular glass photoresist provided by the invention has the advantages of better film-forming property, higher thermal stability, difficulty in denaturation in storage and low viscosity, and does not need to be diluted by an additional solvent in the use process; and exposure is carried out under the ultraviolet wavelength of 365 nm, an exposed pattern has the high contrast ratio, the excellent resolution ratio and the good sensitivity, and the photoetching line width of 3.5 micrometers can be achieved.

Description

technical field [0001] The invention belongs to the technical field of photolithography, and in particular relates to a bisphenol A derivative, a preparation method thereof and an application in photolithography. Background technique [0002] Microelectronics technology is developed along with integrated circuits, especially VLSI. It is one of the core technologies of the information industry and has a profound impact on the national economy. In the late 1950s, scientists invented germanium integrated circuits and silicon integrated circuits. The emergence of integrated circuits promoted the rapid development of semiconductor technology. Modern electronic devices require integrated circuits (chips) to be smaller in size and higher in integration. Since the 1980s, lithography technology has experienced from G-line (436nm), I-line (365nm) lithography, to deep ultraviolet (248nm, 193nm) lithography, and then to the extreme ultraviolet of next-generation lithography technology....

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C07D303/27C07D301/00G03F7/004
CPCC07D303/27C07D301/00G03F7/004C07C43/20C07D301/28G03F7/038G03F7/0045
Inventor 杨国强王亚飞陈龙玉佳婷胡睿郭旭东王双青
Owner INST OF CHEM CHINESE ACAD OF SCI
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