Groove type power device and manufacturing method thereof

A technology for power devices and manufacturing methods, which is applied in the manufacture of semiconductor/solid-state devices, semiconductor devices, electric solid-state devices, etc. Effect of Stabilizing Threshold Voltage and Breakdown Voltage

Pending Publication Date: 2021-06-25
CHINA RESOURCES MICROELECTRONICS (CHONGQING) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a trench type power device and its manufacturing method, which is used to solve the problem of low anti-static breakdown capability of the device in the prior art, the threshold voltage and the The problem of unstable breakdown voltage

Method used

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  • Groove type power device and manufacturing method thereof
  • Groove type power device and manufacturing method thereof
  • Groove type power device and manufacturing method thereof

Examples

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Embodiment 1

[0103] In this embodiment, a method for manufacturing a trench power device is provided, please refer to figure 1 , shown as a process flow diagram of the method, comprising the following steps:

[0104] see figure 2 , providing a substrate, the substrate sequentially includes a first conductivity type heavily doped layer 101 and a first conductivity type lightly doped epitaxial layer 102 from bottom to top.

[0105] As an example, the first conductivity type may be N-type or P-type. When the first conductivity type is N-type, the following second conductivity type is correspondingly P-type. When the first conductivity type When it is P-type, the following second conductivity type is correspondingly N-type. In this embodiment, the heavily doped layer 101 of the first conductivity type takes N-type heavily doped silicon as an example, the lightly doped epitaxial layer 102 of the first conductivity type takes N-type silicon as an example, and the first conductivity type The ...

Embodiment 2

[0140] A trench type power device is provided in this embodiment, please refer to Figure 18 , is shown as a cross-sectional structure diagram of the device, including a substrate, a trench in the cell region, a trench in the terminal region, a dielectric layer 107a in an electrostatic protection region, a gate dielectric layer 108, a polysilicon layer 109a in an electrostatic protection region, and a cell region of the first conductivity type Trench gate 109b, trench polysilicon 109c in the terminal region of the first conductivity type, body region 111 of the second conductivity type and source region 112b of the first conductivity type, wherein the substrate includes heavily doped first conductivity type in sequence from bottom to top layer 101 and the lightly doped epitaxial layer 102 of the first conductivity type; the trenches in the cell region and the trenches in the terminal region are located in the lightly doped epitaxial layer 102; the dielectric layer 107a in the e...

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Abstract

The invention provides a groove type power device and a manufacturing method thereof. The method comprises the following steps: providing a substrate sequentially comprising a first conductive type heavily doped layer and a first conductive type lightly doped epitaxial layer from bottom to top; forming a cellular region groove and a terminal region groove in the lightly doped epitaxial layer; forming a gate dielectric layer on the side wall and the bottom surface of the groove and the top surface of the lightly doped epitaxial layer; forming a polycrystalline silicon layer so as to fill the cellular region groove and the terminal region groove, and carrying out second conduction type doping on the polycrystalline silicon layer; etching the polycrystalline silicon layer until the polycrystalline silicon layer is flush with the top surface of the lightly doped epitaxial layer to obtain a cellular region groove gate and terminal region groove polycrystalline silicon; performing first conduction type doping on the cellular region groove gate and the terminal region groove polycrystalline silicon; forming a body region in the lightly doped epitaxial layer; and forming a source region in the body region. According to the invention, the groove type terminal is adopted, and body region injection can be carried out by adopting relatively high energy, so that the device has more stable threshold voltage and breakdown voltage.

Description

technical field [0001] The invention belongs to the field of semiconductor integrated circuit manufacturing, and relates to a trench type power device and a manufacturing method thereof. Background technique [0002] Trench MOSFET power devices have a wide range of applications due to their low on-resistance, fast switching speed and good avalanche resistance. At the same time, due to the requirements of specific applications, higher requirements are placed on the anti-static impact of trench MOSFET devices, so it is necessary to design trench devices with an Electro-Static discharge (ESD) structure. At present, the conventional device process with ESD structure is relatively complicated. In order to form the terminal junction region, trench, ESD polysilicon, source region, contact hole, electrode and passivation layer, a total of seven photolithography operations are required. And conventional devices with ESD structure use field limiting ring plus field plate as the termi...

Claims

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Application Information

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IPC IPC(8): H01L21/336H01L29/06H01L29/423H01L29/78H01L27/02
CPCH01L29/66477H01L29/7838H01L29/0607H01L29/0684H01L29/4236H01L27/0255H01L27/0296
Inventor 陈雪萌杨林森王艳颖
Owner CHINA RESOURCES MICROELECTRONICS (CHONGQING) CO LTD
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