Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

X-ray exposure device

An exposure device and X-ray technology, which are applied in photoplate-making process exposure devices, microlithography exposure equipment, optics, etc., can solve the problem of low accuracy of overlay patterns, achieve enhanced stability, overcome time-consuming, and improve accuracy sexual effect

Active Publication Date: 2021-05-28
SHANGHAI INST OF TECH
View PDF13 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

During the exposure, the X-ray mask and the resist are not kept relatively still, resulting in low accuracy of the overlay pattern

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • X-ray exposure device
  • X-ray exposure device
  • X-ray exposure device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] An X-ray exposure device, such as figure 1 As shown, including a sleeve 1 and a mobile worktable 2, optical devices such as a reticle 3 and a photoresist substrate 4 are fixed in the sleeve 1, and X-rays emitted by an X-ray light source 9 pass through the light entrance opened on the sleeve 1 11 Enter the sleeve 1, the sleeve 1 is connected with the mobile worktable 2, the mobile worktable 2 is an X-Y worktable, which can improve the accuracy of the mobile exposure, and by controlling the X-Y worktable, the exposure area of ​​the mobile exposure can be increased, thereby improving the X-ray exposure. Exposure efficiency, and the whole device is placed in a large exposure chamber filled with helium, which ensures that the dose of X-rays will not attenuate. The wavelength range of the X-rays emitted by the X-ray light source 9 is 0.15-0.95 nm, and the photon energy of the X-rays is greater than 1.3 keV.

[0037] A reticle 3 , a spacer 7 , a photoresist substrate 4 , a ba...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
sizeaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to an X-ray exposure device, which comprises a bush (1) and a movable workbench (2) connected with the bush (1), wherein a mask plate (3) and a photoresist substrate (4) are arranged in the bush (1), a light inlet (11) is formed in the bush (1), and X-rays enter the bush (1) through the light inlet (11). Compared with the prior art, the photoetching mask plate can be effectively protected, the photoetching efficiency can be effectively improved, the high-precision photoetching effect can be achieved, and batch production is achieved.

Description

technical field [0001] The invention relates to the technical field of optical micromachining, in particular to an X-ray exposure device. Background technique [0002] Optical microfabrication is to use basic exposure methods to produce, transfer or trim fine geometric figures to complete the core industrial steps of development and industrial production of various electronic devices. The miniaturization of micromechanical pattern size mainly depends on the development of exposure technology. Therefore, with the miniaturization of the pattern size and the improvement of the integration level of micro-mechanical devices, the role of overlay exposure technology becomes more and more important. [0003] Synchrotron radiation X-ray depth lithography is a key process of the LIGA process. The wavelength range of synchrotron radiation X-rays is from 0.15nm to 0.95nm. Compared with ordinary X-rays, it has the advantages of better coherence, high brightness and high aspect ratio. ,...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/20
CPCG03F7/2039G03F7/7015G03F7/70733
Inventor 李以贵范若欣赖丽燕王欢张成功
Owner SHANGHAI INST OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com