Low-temperature semiconductor direct bonding method based on surface modification and activation

A direct bonding and surface modification technology, which is applied in the field of solar cells, can solve the problems of commercialization of multi-junction solar cells, and achieve the effects of batch preparation, improved photoelectric conversion efficiency, and good interface crystallization quality

Inactive Publication Date: 2021-04-20
CHINA ELECTRONIC TECH GRP CORP NO 18 RES INST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Expensive equipment and process costs make it difficult to commercialize multi-junction solar cells prepared by this technical route

Method used

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  • Low-temperature semiconductor direct bonding method based on surface modification and activation
  • Low-temperature semiconductor direct bonding method based on surface modification and activation
  • Low-temperature semiconductor direct bonding method based on surface modification and activation

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Embodiment 1

[0027] This embodiment discloses a method for preparing a 5-junction solar cell based on direct bonding of surface modification and activated low-temperature semiconductor, including the following steps:

[0028] 1. Sub-battery epitaxial growth and structure:

[0029] (1) The thickness is 350 μm, the crystal orientation is (100), and the doping concentration is about 10 17 cm -3 ~10 18 cm -3 The n-type GaAs wafer is used as the substrate, and the three-junction sub-cell structure is epitaxially grown on the GaAs substrate by metal-organic vapor phase epitaxy (MOVPE), which in turn includes (Al x Ga 1-x ) y In 1-y P subcell structure, fourth tunnel junction structure, Al with a bandgap of 1.7eV x Ga 1-x As sub-cell structure, the third tunnel junction structure, GaAs sub-cell structure with a band gap of 1.4eV and the second tunnel junction structure; the specific content (x, y values) of Al, Ga, In and other components can be determined by the material The band gap is...

Embodiment 2

[0041] This embodiment discloses a method for preparing a 4-junction solar cell based on direct bonding of surface modification and activated low-temperature semiconductor, including the following steps:

[0042] 1. Sub-battery epitaxial growth and structure:

[0043] (1) The thickness is 350 μm, the crystal orientation is (100), and the doping concentration is about 10 17 -10 18 cm -3 The n-type GaAs wafer is used as the substrate, and the metal-organic vapor phase epitaxy (MOVPE) is used to epitaxy the two-junction sub-cell structure on the substrate, followed by GaxIn with a bandgap width of 1.8eV 1-x The P subcell structure, the third tunnel junction structure, the GaAs subcell structure with a bandgap of 1.4eV, and the second tunnel junction structure; the specific content (x value) of Ga, In and other components can be determined by the material band The gap is calculated; the tunnel junction is mainly composed of a thickness of only a dozen nanometers and a doping co...

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Abstract

The invention belongs to the technical field of solar cells, and relates to a low-temperature semiconductor direct bonding method based on surface modification and activation. The method comprises the following steps: S1, carrying out global planarization polishing treatment on the surfaces of III-V group epitaxial layers grown on different substrates by adopting a chemical mechanical polishing process; S2, carrying out chemical cleaning on the surface of the epitaxial layers by adopting an acidic or alkaline solution with the concentration of 1%-5% under a megasonic condition; S3, enabling the epitaxial wafer to enter a bonding machine after being cleaned and spin-dried; carrying out chemical property activation treatment on the surface of the bonding layer by adopting formic acid/nitrogen mixed gas under vacuum and heating conditions; and S4, finally performing semiconductor direct bonding and annealing reinforcement. According to the method, bonding interface impurities and oxides are effectively removed, the interface crystallization quality is good, and the interface resistivity is remarkably reduced. Compared with a plasma activation technology, on the basis of obtaining a similar bonding effect, the equipment structure and the technological process are simple, the cost is remarkably reduced, and the method is suitable for industrial production.

Description

technical field [0001] The invention belongs to the technical field of solar cells, and relates to a low-temperature semiconductor direct bonding method based on surface modification and activation. Background technique [0002] In the past 10 years, due to the technical bottleneck of lattice-mismatched epitaxial growth of 4-junction III-V solar cells, the increase in cell efficiency and yield has been lower than expected, and the manufacturing cost is high. At the same time, my country's aerospace technology has continuously made breakthroughs, and major aerospace projects such as space station construction, deep space exploration, and moon bases have put forward a clear demand for higher-efficiency multi-junction solar cells. The Spectrum Laboratory of the United States reported that a 5-junction III-V solar cell was developed using semiconductor direct bonding technology, and its photoelectric conversion efficiency reached 36% (AM0), which is the current world record for ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/0725H01L21/18H01L21/306H01L21/02
CPCY02E10/50Y02P70/50
Inventor 王赫刘兴江张无迪高鹏姜明序王宇
Owner CHINA ELECTRONIC TECH GRP CORP NO 18 RES INST
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