Preparation method of terahertz detector based on suspended micro-bridge process
A terahertz detector and micro-bridge technology, applied in the field of terahertz detector preparation, can solve the problems of accelerated photoresist denaturation, loss of mask material, device temperature increase, etc., to improve the etching resistance and etching resistance. The effect of strong performance and improved stability
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[0030] In order to make the purpose, technical solution and advantages of the present application clearer, the present application will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present application, and are not intended to limit the present application.
[0031] Such as Figure 1-2 As shown, the preparation method of the terahertz detector based on the suspended microbridge process, the process steps include:
[0032] (1) The detector works at room temperature. In order to improve the performance of the device, the device should be insulated from the outside world as much as possible during the working process, and the absorbed terahertz spectral energy is converted into effective heat energy. Therefore, the present invention selects a smaller thermal conductivity SiO 2 As the support layer of the microbridge, the SiO 2 ...
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