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Two-color infrared detector and method of making the same

An infrared detector, blue technology, applied in electrical radiation detectors, semiconductor devices, final product manufacturing, etc., can solve the problems of easy diffusion of minority carriers, high dark current, large crosstalk, etc., to ensure quantum efficiency and simple device structure. , the effect of suppressing dark current

Active Publication Date: 2022-07-05
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In 2008, Northwestern University proposed a two-color detector of antimonide superlattice (Pierre-Yves Delaunay et al, Applied Physics Letter 92, 111112, 2008). The device is based on two back-to-back homogeneous pin junctions, and there is a high dark current , large crosstalk and other shortcomings
Since the infrared light absorbing layers C of the two channels are all p-type materials, there is no potential barrier limitation. The problem that this structure will cause is that when one channel is working, the minority carriers generated by the other channel are easy to diffuse to the working channel, resulting in large crosstalk

Method used

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  • Two-color infrared detector and method of making the same
  • Two-color infrared detector and method of making the same
  • Two-color infrared detector and method of making the same

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Embodiment 1

[0032] like figure 2 As shown, in this embodiment, the n-type blue channel layer 3 includes an n-type blue channel absorption layer 31 and an n-type blue channel barrier layer that are sequentially stacked on the first n-type contact layer 2 32. The n-type red channel layer 5 includes an n-type red channel barrier layer 51 and an n-type red channel absorption layer 52 that are sequentially stacked on the p-type connection layer 4 . In this embodiment, the n-type blue channel absorption layer 31 and the n-type red channel absorption layer 52 are placed on both sides of the overall detector;

[0033] and as figure 2As shown, between the n-type blue channel absorption layer 31 and the p-type connection layer 4, and between the n-type red channel absorption layer 52 and the p-type connection layer 4, there are respectively n-type blue The color channel barrier layer 32 and the n-type red channel barrier layer 51, so that the n-type absorption layer, the n-type barrier layer a...

Embodiment 2

[0050] This embodiment specifically describes the manufacturing method of the dual-color infrared detector of the first embodiment.

[0051] like Figure 3 to Figure 6 As shown, the production method includes:

[0052] Step S1, providing an n-type substrate 1, the material of the n-type substrate 1 is n-type InAs, the thickness is 500 μm, and the doping concentration is 5×10 16 cm -3 .

[0053] Step S2, using a metal organic chemical vapor deposition (MOCVD) process as a growth process, and the growth sources are TMGa, TMIn, TMSb and AsH 3 , the n-type doping source is SiH 4 , the p-type doping source is DEZn, the growth temperature is about 600 °C, and the reaction chamber pressure is 200 Torr. After the impurities on the surface of the n-type substrate 1 are removed by high temperature treatment, a first n-type contact layer 2 , an n-type blue channel absorption layer 31 , and an n-type blue color are formed in sequence on the n-type substrate 1 . channel barrier layer...

Embodiment 3

[0066] This embodiment specifically describes another manufacturing method of the dual-color infrared detector of the first embodiment.

[0067] like Figure 3 to Figure 6 As shown, the production method includes:

[0068] Step S1, providing an n-type substrate 1, the material of the n-type substrate 1 is n-type GaSb, the thickness is 500 μm, and the doping concentration is 2×10 18 cm -3 .

[0069]Step S2, using molecular beam epitaxy (MBE) as the growth process, the growth sources are solid elemental sources In, As and Sb, the n-type doping source is Si, the p-type doping source is Be, and the growth temperature is about 400°C. After the impurities on the surface of the n-type substrate 1 are removed by high temperature treatment, a first n-type contact layer 2 , an n-type blue channel absorption layer 31 , and an n-type blue color are formed in sequence on the n-type substrate 1 . channel barrier layer 32, p-type connection layer 4, n-type red channel barrier layer 51, n...

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Abstract

The invention discloses a dual-color infrared detector, comprising an n-type substrate and a first n-type contact layer, an n-type blue channel layer, a p-type connection layer, an n-type contact layer, an n-type blue channel layer, a p-type connection layer, type red channel layer and a second n-type contact layer, the first n-type contact layer is further provided with a first electrode, and the second n-type contact layer is provided with a second electrode corresponding to the first electrode . The invention also discloses a manufacturing method of the above-mentioned two-color infrared detector. The invention solves the problem that in the dual-color infrared detector, when one channel is working, the minority carrier generated by the other channel is easily diffused to the working channel, thereby generating a large crosstalk.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a dual-color infrared detector and a manufacturing method thereof. Background technique [0002] Infrared radiation detection is an important part of infrared technology and is widely used in thermal imaging, satellite remote sensing, gas monitoring, optical communication, spectral analysis and other fields. Antimonide type II superlattice (InAs / GaSb or InAs / InAsSb) infrared detectors are considered to be the most ideal for the preparation of third-generation infrared detectors due to their good uniformity, low Auger recombination rate, and large wavelength adjustment range. Choose one. Compared with mercury cadmium telluride infrared detectors (HgCdTe), it has better uniformity and repeatability, lower cost, and better performance in the long and very long wavelength bands; compared with quantum well infrared detectors (QWIP), its quantum efficiency is higher. High, dark current ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/11H01L31/18G01J5/20
CPCH01L31/11H01L31/1844G01J5/20Y02P70/50
Inventor 黄勇赵宇吴启花熊敏
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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