Photosensitive detector based on composite dielectric gate photoconduction and working method thereof

Abstract

The invention discloses a photosensitive detector based on composite dielectric gate photoconduction and a working method thereof. The photosensitive detector comprises a composite dielectric gate MOS capacitor, a composite dielectric gate MOSFET part and a photoelectron modulation structure which are formed above the same P-type semiconductor substrate, wherein the photoelectron modulation structure comprises a substrate electrode, a photoelectron modulation P + doped region and a photoelectron modulation electrode; the substrate electrode is arranged at the bottom of the P-type semiconductor substrate; an N-type source electrode and a drain electrode are arranged on the surface of the substrate of the composite dielectric gate MOSFET part, and the photoelectron modulation P + doped region is arranged on the periphery of the N-type source electrode and the periphery of the drain electrode; and the photoelectron modulation electrode is positioned on the surface of the photoelectron modulation P + doped region. By controlling the electric field between the bottom of the P-type substrate and the photoelectron modulation P + doped region, photoelectrons in the body region can be collected when the MOS capacitor senses light, and electrical crosstalk between adjacent detectors can be suppressed, so that the quantum efficiency and MTF of the photosensitive detector can be effectively improved.

Description

technical field [0001] The invention relates to an imaging detection device, especially the structure and working mechanism of an imaging detection device in the infrared, visible light band to ultraviolet band, and specifically relates to a photosensitive detector based on a composite dielectric grid photoconductor and its working method. Background technique [0002] The market for solid-state imaging sensors is booming and experiencing exponential growth due to demand in the areas of digital and video cameras, mobile imaging, surveillance and biometrics. Traditionally, CCD is the dominant imaging technology. However, with the rapid development of CMOS technology, CMOS image sensor (CIS) technology has been widely used in many fields, such as PC cameras, mobile phones, high-end digital cameras and other fields. In addition, with the iterative optimization of technology, in Comparable to CCDs in some performance aspects, it has become an alternative to CCDs. However, the ...

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Problems solved by technology

However, due to the large ratio of the detector thickness (above 2um) to the detector size (submicron), the depth of the depletion region under the exposure voltage is difficult to reach 2um, which makes the photogenerated electrons in a part of the body region be directly recombined during exposure. , a part of the photoelectron is lost, which reduces the quantum efficiency, and in the process of electron collection, there is electrical crosstalk, and the modulation transfer function MTF (Modulation Transfer Function, MTF) is lost, and the final image quality is seriously restricted

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