Preparation method of single-layer atomic channel fin type field effect transistor and product

Abstract

The invention discloses a fin type field effect transistor with a monoatomic layer thickness channel material and a preparation method thereof. The fin type field effect transistor takes a high dielectric constant material as a dielectric layer and takes a single-layer transition metal chalcogenide as a channel material. The preparation method comprises the following steps: firstly, etching a vertical step or a vertical array structure on a substrate; depositing and uniformly coating a dielectric layer on the side wall, synthesizing a single-layer transition metal chalcogenide at the step, obtaining a vertical monoatomic layer thickness channel material by adopting an anisotropic etching process, and finally obtaining the fin field effect transistor of the monoatomic layer thickness channel material by combining selective wet etching and micro-nano processing process, wherein the fin width of the obtained transistor is only 0.6 nm; the fin type field effect transistor with the height of hundreds of nanometers can be obtained based on different thicknesses of the top layer of the substrate; a high-density fin array type fin field effect transistor can be obtained by preparing the step array and is used for constructing a logic device with high integration and low power consumption.

Description

technical field [0001] The invention belongs to the applied research field of nano artificial compound, micro-nano device, logic device, etc., and specifically provides a method for preparing a fin field-effect transistor of a single-atom-layer-thick channel material. Background technique [0002] Moore's Law states that the number of transistors per unit area in an integrated circuit will double every year, which requires that the size of transistors be continuously reduced. When the channel width reaches below 10 nanometers, the quantum confinement effect of the traditional planar field effect transistor is significant, which hinders its further reduction in size. One of the solutions is to use a three-dimensional structure to construct a fin field effect transistor composed of a gate and a channel material covered by a dielectric layer. Thanks to the larger contact area between the gate and the channel material, and the thinner thickness of the channel material, the cont...

AI Technical Summary

Problems solved by technology

However, how to achieve vertically independent two-dimensional nanosheets in the experiment is still very challenging.

Images