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A method of increasing the crystallization density of the perovskite absorber layer of solar cells

A technology of solar cells and crystal density, applied in circuits, electrical components, photovoltaic power generation, etc., can solve problems such as poly-grain boundary voids, and achieve the effect of reducing voids, improving effective transfer, and compact and dense grain arrangement

Active Publication Date: 2021-01-12
山西穿越光电科技有限责任公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0009] Aiming at the current problem of more grain boundary voids and defects caused by solution evaporation in the light-absorbing layer of large-area perovskite cells, the present invention proposes a method for increasing the crystallization density of the perovskite absorbing layer of solar cells

Method used

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  • A method of increasing the crystallization density of the perovskite absorber layer of solar cells
  • A method of increasing the crystallization density of the perovskite absorber layer of solar cells

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Embodiment 1

[0038] Step 1: Mix polypropylene resin and acrylic acid grafted polypropylene according to the weight ratio of 100 parts by weight: 15 parts by weight, melt and plasticize the uniformly mixed mixture through an extrusion system, and cast to form a 0.6mm thick base film, After heat treatment, the base film is heated to 110°C and stretched, and the stretched base film is stretched 3 times in the longitudinal direction; the cooling rate is 25°C / min to obtain a heat-shrinkable film, and the heat-shrinkable film is laid flat On the surface of alumina ceramic substrate;

[0039] Step 2: Dissolve 10 parts by weight of methylamine iodine and 30 parts by weight of lead iodide in 100 parts by weight of DMF solvent to prepare a perovskite precursor solution, spin the precursor at a rotation rate of 1000r / min, and spin coating for 30s On the heat-shrinkable film; after drying at 40°C, use a mold to compact the formed film and keep the pressure at 5.5MPa;

[0040] Step 3: After annealing ...

Embodiment 2

[0043] Step 1: Mix polypropylene resin and acrylic acid grafted polypropylene according to the weight ratio of 100 parts by weight: 15 parts by weight, melt and plasticize the uniformly mixed mixture through an extrusion system, and cast to form a 0.6mm thick base film, After heat treatment, the base film is heated to 120°C and stretched, and the stretched base film is stretched 4 times in the longitudinal direction; the cooling rate is 15°C / min to obtain a heat-shrinkable film, and the heat-shrinkable film is laid flat On the surface of alumina ceramic substrate;

[0044] Step 2: Dissolve 10 parts by weight of methylamine iodine and 30 parts by weight of lead iodide in 100 parts by weight of DMF solvent to prepare a perovskite precursor solution, spin the precursor at a rotation rate of 1500r / min, and spin coating for 30s On the heat-shrinkable film; after drying at 45°C, use a mold to compact the formed film and keep the pressure at 6MPa;

[0045] Step 3: After annealing th...

Embodiment 3

[0048] Step 1: Mix polypropylene resin and acrylic acid grafted polypropylene according to the weight ratio of 100 parts by weight: 15 parts by weight, melt and plasticize the uniformly mixed mixture through an extrusion system, and cast to form a 0.6mm thick base film, After heat treatment, the base film is heated to 130°C and stretched, and the stretched base film is stretched 5 times in the longitudinal direction; the cooling rate is 35°C / min to obtain a heat-shrinkable film, and the heat-shrinkable film is laid flat On the surface of alumina ceramic substrate;

[0049] Step 2: Dissolve 10 parts by weight of methylamine iodine and 30 parts by weight of lead iodide in 100 parts by weight of DMF solvent to prepare a perovskite precursor solution, spin the precursor at a rotation rate of 3000r / min, and spin coating for 30s On the heat-shrinkable film; after drying at 60°C, use a mold to compact the formed film and keep the pressure at 5.5MPa;

[0050] Step 3: After annealing ...

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Abstract

The invention relates to a perovskite absorbing layer of a solar cell, in particular to a method for increasing the crystal density of the perovskite absorbing layer of a solar cell. The method of the present invention comprises the following steps: uniformly mixing the polypropylene resin and the compatibilizer, then casting the base film after being melted and plasticized by an extrusion system; film, and then spread the heat-shrinkable film on the surface of the alumina ceramic substrate; dissolve methylamine iodide and lead iodide in DMF solvent to obtain a perovskite precursor solution, and spin-coat the precursor solution on the heat-shrinkable Then dry it at 40~60℃ to obtain the membrane material; use a mold to compact the membrane material and keep the pressure greater than 5MPa; anneal the membrane material at 100~140℃ for 1~1.5h; heat treatment in a vacuum furnace. During the crystal recrystallization process of the perovskite absorbing layer of the present invention, the arrangement of crystal grains is more compact and compact, and the photoelectric conversion efficiency thereof is improved.

Description

technical field [0001] The invention relates to a perovskite absorbing layer of a solar cell, in particular to a method for increasing the crystal density of the perovskite absorbing layer of a solar cell. Background technique [0002] With the increasing awareness of environmental protection and the crisis of energy depletion in the future, the recycling of renewable energy has become an increasingly important demand in today's society, and the use of solar energy is the first to bear the brunt. Since the photovoltaic industry entered the market in the early 21st century, the conversion efficiency of solar cells has increased to more than 20%. Organic-inorganic perovskite solar cells have gradually replaced the second-generation polysilicon / thin-film solar cells due to their wide bandgap, low cost, and high photoelectric conversion efficiency. However, during the synthesis process of large-area batteries, their efficiency often decreases rapidly with the increase of the ar...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/00H01L51/42H10K99/00
CPCH10K71/12H10K71/40H10K30/00Y02E10/549
Inventor 陈庆廖健淞杨洁何方陈涛
Owner 山西穿越光电科技有限责任公司
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