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Flexible energy storage film and its preparation method, film capacitor

An energy storage and thin film technology, applied in the energy field, can solve the problems of insufficient flexibility of energy storage thin films, and achieve the effect of high reliability, high reliability and good electrical performance

Active Publication Date: 2021-12-14
INST OF FLEXIBLE ELECTRONICS TECH OF THU ZHEJIANG +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Based on this, it is necessary to address the problem of insufficient flexibility of the ceramic energy storage film, to provide a flexible energy storage film and its preparation method, and a film capacitor; through this preparation method, the flexibility of the energy storage film is realized, and at the same time, the energy storage film has a High reliability and high energy storage density, can be used as a dielectric material for film capacitors

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  • Flexible energy storage film and its preparation method, film capacitor
  • Flexible energy storage film and its preparation method, film capacitor
  • Flexible energy storage film and its preparation method, film capacitor

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preparation example Construction

[0036] The preparation method of the flexible energy storage film provided by the present invention comprises:

[0037] S1, providing a flexible metal substrate;

[0038] S2, using titanium metal as the target material, depositing a titanium dioxide prefabricated layer on the flexible metal substrate by using the magnetic filter multi-arc ion plating method, wherein the working atmosphere in the magnetic filter multi-arc ion plating method is argon and oxygen mixed gas;

[0039] S3, performing heat treatment on the flexible metal substrate deposited with the titanium dioxide prefabricated layer to obtain a flexible energy storage film.

[0040] In step S1, the material of the flexible metal substrate is not limited, as long as it has good flexibility, strong high-temperature oxidation resistance, electrical conductivity, and does not react with the titanium dioxide ceramic film, including copper foil, titanium foil, silver foil, One of gold foil, platinum foil, aluminum foil...

Embodiment 1

[0075] With flexible electrolytic copper foil as the substrate, the thickness is 18 μm, the surface roughness is 0.8 μm, it is placed in a vacuum chamber, and the vacuum is evacuated to 3×10 -3 Pa. The vacuum chamber is heated to 150°C, the holding time is 10min, filled with argon, the flow rate of argon is 20sccm, and the vacuum degree of the vacuum chamber is 2×10 -2 Pa, turn on the Hall ion source, set the voltage of the Hall ion source to 1000V, the current to 0.5A, and treat for 1min to make the surface tension of the copper foil reach 60 dynes.

[0076] Maintain a vacuum of 2.0×10 -2 Pa, the argon gas flow rate is 18 sccm, turn on the oxygen, make the oxygen flow rate 2 sccm, turn on the magnetic filter multi-arc ion plating power supply, adjust the arc current to 50A, draw the current to 9A, and apply a bias voltage of 5V to the flexible electrolytic copper foil. The metal is used as the target material, and the deposition time is 1min to form a titanium dioxide layer...

Embodiment 2

[0081]With flexible silver foil as the substrate, the thickness of the silver foil is 12 μm, the surface roughness is 0.5 μm, placed in a vacuum chamber, and vacuumed to 3×10 -3 Pa. The vacuum chamber is heated to 100°C, the holding time is 20min, filled with argon, the flow rate of argon is 30sccm, and the vacuum degree of the vacuum chamber is 3×10 -2 Pa, turn on the Hall ion source, set the voltage of the Hall ion source to 800V, and the current to 0.6A, and treat for 5min to make the surface tension of the copper foil reach 65 dynes.

[0082] Maintain a vacuum of 3.0×10 -2 Pa, the argon gas flow rate is 25 sccm, turn on the oxygen, make the oxygen flow rate 5 sccm, turn on the magnetic filter multi-arc ion plating power supply, adjust the arc current to 55A, draw the current to 10A, and apply a bias voltage of 6V to the flexible silver foil. As a target, a titanium dioxide layer with a thickness of 400 nm and a grain size of 80 nm was formed on the copper foil with a dep...

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Abstract

The invention relates to a flexible energy storage film, a preparation method thereof, and a film capacitor. The preparation method includes: providing a flexible metal substrate; using titanium metal as a target material, depositing a titanium dioxide prefabricated layer on the flexible metal substrate by using a magnetic filter multi-arc ion plating method, wherein the magnetic filter multi-arc ion plating method The working atmosphere in the plating method is a mixed gas of argon and oxygen; the flexible metal substrate deposited with a titanium dioxide prefabricated layer is heat treated to obtain a flexible energy storage film. The flexible energy storage film includes a flexible metal substrate and a titanium dioxide layer formed on the flexible metal substrate. The preparation method not only realizes the flexibility of the energy storage film, but also enables the energy storage film to have high reliability and high energy storage density, and can be used as a dielectric material of a film capacitor.

Description

technical field [0001] The invention relates to the field of energy, in particular to a flexible energy storage film, a preparation method thereof, and a film capacitor. Background technique [0002] With the gradual development of electronic equipment towards miniaturization, multi-function and light weight, the electronic components that make up electronic equipment also need to develop towards the trend of miniaturization, light weight, high integration and multi-function. [0003] For film capacitors, the ideal way to achieve miniaturization is to increase the dielectric constant of the dielectric film to increase the capacitance. Dielectric films mainly include polymer energy storage films and ceramic energy storage films. In traditional film capacitors, the dielectric films used are mainly polymer energy storage films. Since the dielectric constant of ceramic energy storage films is much higher than that of polymer energy storage films, the use of ceramic energy stora...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01G4/002H01G4/005H01G4/12H01G4/33C23C14/08C23C14/32
CPCH01G4/1218H01G4/002H01G4/005H01G4/33C23C14/325C23C14/083
Inventor 冯雪王志建
Owner INST OF FLEXIBLE ELECTRONICS TECH OF THU ZHEJIANG
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