Modification method for SnO2 electron selective transmission layer

Abstract

The invention relates to a modification method for a SnO2 electron selective transmission layer. The modification method comprises steps of (1) doping agent that is inorganic acid, sulfonic acid, amino acid or sulfur-containing ammonium salt, and doping concentration of 0.1-10at%; (2) preparation of a precursor solution: adding a required doping agent to prepared SnO2 sol with concentration of 1-5wt% according to the doping concentration, ultrasonic oscillating for 30-60 minutes at 30-80W to fully mix and uniformly disperse the doping agent; (3) preparation of a film: cleaning ITO glass, thentreating the ITO glass with UV ozone, and then spin-coating the prepared doping SnO2 sol on the surface of the ITO glass; and (4) film annealing. The modification method for the SnO2 electron selective transmission layer has the beneficial effects of improving SnO2 carrier migration rate and electronic extraction capability, lowering energy level mismatch of SnO2 and a perovskite layer, improvingoptical transmittance of a SnO2 film, improving crystalizing quality and stability of the perovskite layer, and improving short circuit current density, open-circuit voltage, fill factor and efficiency of a perovskite battery.

Description

technical field [0001] The present invention relates to a kind of SnO 2 The invention relates to a method for modifying an electron selective transport layer, which belongs to the technical field of solar cells. Background technique [0002] SnO 2 As a common n-type oxide semiconductor material, it is often used as an electron transport layer material for perovskite solar cells. However, in practical applications, there are generally problems such as serious energy level mismatch, low actual carrier concentration, and large surface defect states. To solve these problems, the current popular methods are as follows: [0003] 1. Metal element doping [0004] Doping is a common method to adjust the electrical properties of materials, so it is also commonly used to adjust the electrical properties of SnO 2 The electrical properties of the electron transport layer, in order to obtain higher application value. The ion radius of Li element is small, and the work function of it...

AI Technical Summary

Problems solved by technology

[0014] 1. Doping with metal elements often reduces transmittance and increases parasitic absorption loss;

[0015] 2. The doping of metal elements often causes the work function to increase, which aggravates the energy level mismatch of the battery;

[0016] 3. Many doping elements are rare metals, which are expensive and not conducive to industrialization;

[0017] 4. Surface plasma treatment is only effective on the surface;

[0018] 5. When high-temperature annealing consumes energy, it is not suitable for flexibility requirements, and the effect may not be very good;

[0019] 6. Low temperature annealing of SnO 2 The crystallinity is low, and the defect state is serious;

[0020] 7. The interface modification layer polyfullerene and its derivatives are expensive, poor in stability, and only have a modification effect on the interface, while ignoring SnO 2 inside the film;

[0021] 8. Methods such as physical vapor deposition and chemical vapor deposition are expensive and often have large roughness;

[0022] 9. Chemical bath, electrochemical deposition, sol-gel method, etc. often have large roughness and uneven surface morphology;

[0023] 10. The atomic layer deposition method has slow speed and small area, which is not suitable for industrial production

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