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Electron beam resist composition and preparation method

A technology of electron beam lithography and composition, applied in the field of photoresist, can solve the problems of poor thermal stability, dry etching resistance, low sensitivity, etc., and achieve the effects of improving sensitivity, improving resolution, and high corrosion resistance

Pending Publication Date: 2018-10-09
儒芯微电子材料(上海)有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Polymethyl methacrylate (PMMA) is the earliest and most common positive electron beam photoresist. PMMA can be used to prepare patterns with very high resolution, and its limit size can even be less than 10nm, but its existence sensitivity is low, and its resistance Dry etching, poor thermal stability and other issues

Method used

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  • Electron beam resist composition and preparation method
  • Electron beam resist composition and preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040]

[0041] The structure of the polymer P-I-1a is shown in the above formula. The polymer is obtained by copolymerization of two monomers shown in the formulas M-1 and M-I-1. The synthesis of the copolymer is completed by the following steps:

[0042] Add: 4.16g (0.04mol) methyl fluoroacrylate, 10.57g (0.06mol) benzyl methacrylate Esters, 50mL tetrahydrofuran, nitrogen gas into the reaction system for 10 minutes under stirring, after the reaction was closed, the system was heated to 60°C, and after the temperature became constant, 5mL 2,2'-azo-2 was added through a constant pressure dropping funnel , 4-Dimethylvaleronitrile (1.54 g, 0.006 mol) in tetrahydrofuran solution, continued to stir and react at 60° C. for 24 hours. After the reaction, the polymer reaction solution was washed with n-hexane (3×200 mL), concentrated with a rotary evaporator, precipitated in methanol, filtered with suction, and dried in vacuum at 60° C. for 24 hours to obtain a white solid powder. ...

Embodiment 2

[0044]

[0045] The structure of the polymer P-II-1a is shown in the above formula. The polymer is obtained by copolymerization of two monomers shown in the formulas M-3 and M-II-3. The synthesis of the copolymer is completed by the following steps:

[0046] Add: 8.13g (0.05mol) n-butyl chloroacrylate, 8.41g (0.05mol) 2-isopropylene Base naphthalene, 50mL xylene, nitrogen gas into the reaction system for 10 minutes under stirring, after the closed reaction, heat the system to 80°C, after the temperature is constant, add 5mL 2,2'-azo - 2,4-Dimethylvaleronitrile (1.54 g, 0.006 mol) in xylene, after stirring for 15 hours at 60°C. After the reaction, the polymer reaction solution was washed with n-hexane (3×200 mL), concentrated with a rotary evaporator, precipitated in methanol, filtered with suction, and dried in vacuum at 60° C. for 24 hours to obtain a white solid powder. The ratio is 85%, the molecular weight Mw: 38000, and the molecular weight distribution is 1.52.

Embodiment 3～6

[0048] Polymers P-I-1b, P-I-1c, P-II-1b, and P-II-1c are prepared based on the polymerization methods of Example 1 and Example 2, respectively, by changing the reaction temperature and the amount of the initiator. The specific polymer Weight average molecular weight (Mw), number average molecular weight (Mn), and molecular weight distribution (Mw / Mn) are shown in the following table:

[0049]

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Abstract

The invention provides an electron beam resist composition. Main components of the electron beam resist composition comprise a halogenated acrylate copolymer and a photo-acid generator, wherein the halogenated acrylate copolymer is a copolymer of a halogenated acrylate monomer unit and an aromatic acrylate or aromatic alkene monomer unit. Side chain-substituted halogen atoms and rigid aromatic rings are introduced and a proper combination of monomer units is selected. The copolymer in the composition provided by the invention has higher sensitivity and corrosion resistance. Besides, the composition also contains the photo-acid generator which can accelerate the pyrolysis of the copolymer in the composition, effectively improves exposure efficiency and further improves the sensitivity of the electron beam resist.

Description

technical field [0001] The invention relates to the field of photoresist, in particular to a chemically amplified positive electron beam photoresist and a preparation method thereof. Background technique [0002] Electron-beam lithography (EBL), as a next-generation lithography technology, is considered to be one of the most promising lithography technologies below the 22nm node due to its high resolution and stable performance. Progress is often inseparable from the development of lithographic materials. In recent years, electron beam as a nanoscale lithography technology has put forward higher requirements for lithography materials. Electron beam photoresist is a kind of photoresist material coated on the surface of the substrate through electron beam exposure to achieve pattern transfer. According to the crosslinking or chemical bond breakage of the polymer before and after irradiation, electron beam photoresist can be divided into positive photoresist and photoresist. ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/039
CPCG03F7/039
Inventor 秦龙许箭袁华曾霞刘晓华汪武平耿文练花雷
Owner 儒芯微电子材料(上海)有限公司
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