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Method for preparing hafnium oxide based ferroelectric film by adopting reaction magnetron sputtering

A technology of reactive magnetron sputtering and hafnium dioxide, which is applied in sputtering plating, ion implantation plating, coating, etc., can solve the problems of easy cracking, high cost of ceramic targets, and high cooling requirements, and achieve compactness Good, flexible power supply selection, good film uniformity

Active Publication Date: 2018-08-24
DALIAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The above reports all use the magnetron sputtering method to prepare HfO 2 ferroelectric-based thin film, but the targets used are all ceramic oxides, so only RF power can be used for sputtering. In addition, ceramic targets are easy to crack during the sputtering process and have high cooling requirements, so they need to be prepared by special processes Processing, so the cost of ceramic targets is high

Method used

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  • Method for preparing hafnium oxide based ferroelectric film by adopting reaction magnetron sputtering
  • Method for preparing hafnium oxide based ferroelectric film by adopting reaction magnetron sputtering
  • Method for preparing hafnium oxide based ferroelectric film by adopting reaction magnetron sputtering

Examples

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Embodiment example 1

[0025] In this embodiment, a p-Si substrate is selected as the substrate, and the standard RCA cleaning process in the semiconductor industry is used for cleaning. The hafnium target is a face-to-face planar magnetron target with a purity of 99.9%, which is placed perpendicular to the sample stage. The yttrium target is a cylindrical target with a purity of 99.9%, which is placed obliquely above the planar magnetron target. The target base distance is 90mm. Reactive magnetron sputtering, background vacuum up to 5x10 -4 Pa, high-purity argon (99.99%) as the working gas, high-purity oxygen (99.99%) as the reaction gas, Ar:O 2 =10:10sccm, working pressure 0.3Pa, Hf target sputtering power 50W, Y target sputtering power 30W, substrate temperature is room temperature, pre-sputtering time 5min, sputtering time 30min, the Y doping amount obtained is 1mol%, HfYO with a film thickness of 10 nm 2 Amorphous thin film. It is annealed at N 2 Under the atmosphere, the temperature is 600...

Embodiment example 2

[0027] In this embodiment, a p-Si substrate is selected as the substrate, and the standard RCA cleaning process in the semiconductor industry is used for cleaning. The hafnium target is a face-to-face planar magnetron target with a purity of 99.9%, which is placed perpendicular to the sample stage. The silicon target is a cylindrical target with a purity of 99.9%, which is placed obliquely above the planar magnetron target. The target base distance is 120mm. Reactive magnetron sputtering, background vacuum up to 5x10 -4 Pa, high-purity argon (99.99%) as the working gas, high-purity oxygen (99.99%) as the reaction gas, Ar:O 2 =20:20sccm, working pressure 0.5Pa, Hf target sputtering power 80W, Si target sputtering power 50W, substrate temperature 200°C, pre-sputtering time 5min, sputtering time 60min, the Si doping amount is 4mol% , with a film thickness of 20 nm in HfSiO 2 Amorphous thin film. It is annealed at N 2 Under the atmosphere, the temperature is 700°C, the holding...

Embodiment example 3

[0029] In this embodiment, a p-Si substrate is selected as the substrate, and the standard RCA cleaning process in the semiconductor industry is used for cleaning. The hafnium target is a face-to-face planar magnetron target with a purity of 99.9%, which is placed perpendicular to the sample stage. The zirconium target is a cylindrical target with a purity of 99.9%, which is placed obliquely above the planar magnetron target. The target base distance is 160mm. Reactive magnetron sputtering, background vacuum up to 5x10 -4 Pa, high-purity argon (99.99%) as the working gas, high-purity oxygen (99.99%) as the reaction gas, Ar:O 2 =40:40sccm, working pressure 0.8Pa, Hf target sputtering power 100W, Zr target sputtering power 120W, substrate temperature 300°C, pre-sputtering time 10min, sputtering time 90min, doping amount 50mol%, thickness 30nm HfZrO 2 Amorphous thin film. It is annealed at N 2 Under the atmosphere, the temperature is 800°C, the holding time is 40s, and the te...

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Abstract

The invention belongs to the field of material preparation and discloses a method for preparing a hafnium oxide based ferroelectric film by adopting reaction magnetron sputtering. The method comprisesthe following steps of: firstly removing residual impurities and dirt on the surface by adopting a standard RCA washing process; subsequently, by taking metallic hafnium and a doped single metal or nonmetal as a target material, depositing an amorphous hafnium oxide based film in a mixed atmosphere of Ar and O2 by adopting reaction magnetron sputtering; and afterwards annealing and crystalizing the deposited film to obtain the hafnium oxide based ferroelectric film which is of an orthorhombic-phase Pca21 spatial group crystal structure. The method for preparing the hafnium oxide based ferroelectric film by adopting reaction magnetron sputtering disclosed by the invention has the advantages that the deposition speed is high; the temperature of base materials is low; damages of the film layer are small; the film and a substrate are combined well; the film is high in purity, good in compactness and good in film formation uniformity; a sputtering power supply is flexible to select; the doped elements are flexible and versified in selection; cooling of the target material has no special requirements; the process is good in repeatability; the film growth conditions are easy to control;and the method can easily realize industrialization.

Description

technical field [0001] The invention belongs to the technical field of material preparation, and relates to an orthorhombic Pca2 1 Preparation method of hafnium dioxide-based ferroelectric thin film with space group crystal structure. Background technique [0002] In the era of globalization, informationization, and technology, people's demand for intelligent hardware is getting higher and higher. Ferroelectric materials have excellent dielectric properties, piezoelectricity, pyroelectricity, ferroelectricity and Effect, photorefractive effect, nonlinear optical effect and other important properties, it has broad application prospects in many fields such as new information storage, sensors and optoelectronic devices. Traditional ferroelectric materials with perovskite structure are poorly compatible with semiconductor CMOS integration process technology and difficult to realize three-dimensional nanostructure preparation, which seriously restricts the development of integra...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/08C23C14/58C23C14/54
CPCC23C14/0021C23C14/083C23C14/352C23C14/542C23C14/5806
Inventor 周大雨孙纳纳徐进徐军张昱赵鹏
Owner DALIAN UNIV OF TECH
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