A method for preparing a large-area surface-enhanced Raman scattering substrate
A surface-enhanced Raman and large-area technology, applied in Raman scattering, material excitation analysis, instruments, etc., to achieve simple operation, high surface-enhanced Raman scattering effect, and high stability
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Embodiment 1
[0024] Example 1: A method for preparing a large-area surface-enhanced Raman scattering substrate. The SERS substrate that can be prepared by a simple method can reach an area of 3.5 cm×3.5 cm. The specific method includes the following steps:
[0025] 1) Polystyrene powder (48 kg / mol, dispersity 1.02) is dissolved in toluene, and a mixed solution of 2 mg / ml is prepared. Cut the circular single crystal silicon wafer into square silicon wafers with a size of 3.5cm×3.5cm with a glass knife; 2 SO 4 , 30%H 2 o 2 and deionized water according to the volume ratio of 100 / 35 / 15 in a certain volume of cleaning solution, boiled at 80 ℃ for 30 minutes; then, rinsed with deionized water, put it into a plastic beaker, and added 20% hydrogen fluoride A mixed solution of acid and deionized water, the volume ratio is 1:1; use hydrofluoric acid to remove the oxide layer on the silicon substrate; finally, rinse with deionized water, and blow dry with high-purity nitrogen for later use.
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Embodiment 2
[0033] Example 2: A method for preparing a large-area surface-enhanced Raman scattering substrate. The area of the SERS substrate that can be prepared by a simple method can reach 3.5cm×3.5cm. The specific method includes the following steps:
[0034] 1) Polymethyl methacrylate powder (molecular weight: 50 kg / mol, dispersion: 1.1) is dissolved in toluene, and a mixed solution of 2 mg / ml is prepared. Cut the circular monocrystalline silicon wafer into square silicon wafers with a size of 3.5cm×3.5cm with a glass knife; place the cut silicon wafers in a 80% H 2 SO 4 , 30%H 2 o 2 and deionized water according to the volume ratio of 100 / 35 / 15 in a certain volume of cleaning solution, boiled at 80 ℃ for 30 minutes; then, rinsed with deionized water, put it into a plastic beaker, and added 20% hydrogen fluoride A mixed solution of acid and deionized water, the volume ratio is 1:1; use hydrofluoric acid to remove the oxide layer on the silicon substrate; finally, rinse with dei...
Embodiment 3
[0042] Example 3: A method for preparing a large-area surface-enhanced Raman scattering substrate. The area of the SERS substrate that can be prepared by a simple method can reach 3.5cm×3.5cm. The specific method includes the following steps:
[0043] 1) Polymethyl methacrylate powder (molecular weight 50 kg / mol, dispersity 1.1) and polystyrene powder (48kg / mol, dispersity 1.02) are mixed and dissolved in toluene at a mass ratio of 2:8, and the configuration is 2 mg / mol ml of mixed solution. Cut the circular monocrystalline silicon wafer into square silicon wafers with a size of 3.5cm×3.5cm with a glass knife; place the cut silicon wafers in a 80% H 2 SO 4 , 30%H 2 o 2 and deionized water according to the volume ratio of 100 / 35 / 15 in a certain volume of cleaning solution, boiled at 80 ℃ for 30 minutes; then, rinsed with deionized water, put it into a plastic beaker, and added 20% hydrogen fluoride A mixed solution of acid and deionized water, the volume ratio is 1:1; us...
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