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A method for preparing copper thin film by controlled atmosphere cold spraying

A technology of copper film and cold spraying, applied in the direction of pressure inorganic powder plating, etc., can solve the problems of serious sewage pollution of electrolytic copper foil, large production water consumption, high scrap rate, etc., achieve uniform and controllable film thickness, prevent metal oxidation, The effect of simple and flexible process

Active Publication Date: 2019-04-12
XI AN JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the limitations of the calendering process, the thinner and wider it is, the harder it is to produce, and the scrap rate is high. Due to the limited width, it is difficult to meet the production of rigid copper clad laminates.
However, the electrolytic copper foil prepared by the electrolytic method has poor ductility and cannot be bent, and is mainly used for the production of rigid copper-clad laminates; and the environmental protection problem is also the biggest problem for the electrolytic copper foil. The industrial electrolytic copper foil production consumes a lot of water (per ton of electrolytic Copper foil consumes about 140-150m of pure water 3 ), the electrolytic copper foil sewage produced is seriously polluted, the treatment is difficult, and the treatment investment cost is high. It is one of the difficult problems in the production of environmental protection departments and electrolytic copper foil manufacturers in all countries in the world.

Method used

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  • A method for preparing copper thin film by controlled atmosphere cold spraying
  • A method for preparing copper thin film by controlled atmosphere cold spraying
  • A method for preparing copper thin film by controlled atmosphere cold spraying

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Experimental program
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Effect test

Embodiment 1

[0044] In this embodiment, spherical submicron pure copper powder is selected as the raw material, the particle size of the original copper powder particles is in the range of 0.3-1.5 μm, the polished monocrystalline silicon wafer is used as the substrate, and helium is used as the carrier gas. The gas pressure during spraying is 0.1MPa, gas preheating temperature is 200℃, spraying distance is 5mm, using controlled atmosphere cold spraying to prepare copper thin film on monocrystalline silicon wafer, the thickness of the thin film is about 10μm, Figure 4 It is the SEM photo of the cross-section of the copper film. From the morphology of the prepared copper film, it can be seen that the copper film is uniform and continuous, and it is well combined with the substrate without cracks.

Embodiment 2

[0046] In this embodiment, spherical submicron pure copper powder is selected as the raw material, the particle size of the original copper powder particles is in the range of 0.3-1.5 μm, the polished monocrystalline silicon wafer is used as the substrate, and helium is used as the carrier gas. The gas pressure during spraying is 0.1MPa, a gas preheating temperature of 100°C, a spraying distance of 5mm, and a controlled atmosphere cold spraying to prepare a copper film on a monocrystalline silicon wafer with a thickness of about 7μm.

Embodiment 3

[0048] In this embodiment, spherical submicron pure copper powder is selected as the raw material, the particle size of the original copper powder particles is in the range of 0.3-1.5 μm, the polished monocrystalline silicon wafer is used as the substrate, and helium is used as the carrier gas. The gas pressure during spraying is 0.1MPa, gas preheating temperature is 200℃, spraying distance is 10mm, using controlled atmosphere cold spraying to prepare copper film pattern on monocrystalline silicon wafer, pattern single line width is 0.14±0.02mm, thickness is about 4μm, Figure 5 It is a photo of the copper film pattern. From the overall appearance of the prepared copper pattern, it can be seen that the copper pattern line is uniform and continuous, and various required two-dimensional copper film patterns can be prepared according to requirements.

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Abstract

The invention discloses a method for preparing a copper film through controlled atmosphere cold spraying. The method comprises the steps that firstly, original copper powder is conveyed into a powder oxygen content control unit, copper oxide on the surfaces of copper powder particles is reduced into copper, and the oxygen content of the copper powder is reduced; secondly, the copper powder treated through the powder oxygen content control unit is conveyed into a powder granularity control and powder feeding unit, the input copper powder is scattered and screened, and the granularity of the output copper powder particles is controlled within the set range; thirdly, the copper powder treated in the second step is conveyed into a cold spraying nozzle in a controlled oxygen partial pressure cavity; and fourthly, the speed and temperature of the copper powder particles are regulated and controlled through a gas pressure, flow and temperature control unit, and the copper powder particles in the controlled oxygen partial pressure cavity collide with base body depositions to form the copper film. The film obtained through the method is dense in structure and low in oxygen content, the conductivity is not lower than 80% that of corresponding component dense block materials, and the film is superior to a traditional electrolysis or copper electroplating film in the aspects of environment protection and cost.

Description

Technical field [0001] The invention relates to the field of copper film preparation technology and controllable atmosphere cold spraying, in particular to a method for preparing copper film by controllable atmosphere cold spraying. Background technique [0002] Copper has good electrical and thermal conductivity, and is often used in electronic or electrical equipment. Due to process requirements or cost control needs, copper mainly exists in the form of copper film in many places, such as electroplating a copper film on the surface of aluminum alloy and other metals to increase the conductivity and welding characteristics of the material, or copper foil in the copper clad laminate As a key material application, etc. However, the electroplating process of electroplating copper films on metal surfaces has problems such as high energy consumption and pollution of electroplating waste liquid. As for the copper foil used in the preparation of copper clad laminates, traditional cop...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C24/04
CPCC23C24/04
Inventor 李成新马凯张山林杨冠军李长久
Owner XI AN JIAOTONG UNIV
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