Method for preparing silicon thin film light and heat absorber

A technology of absorber and silicon thin film, which is applied in the field of preparation of multilayer thin film materials, can solve the problems of low service life and poor wear resistance, and achieve the effects of good heat resistance, uniform refractive index and high hardness

Active Publication Date: 2015-07-08
NANJING UNIV OF TECH +1
View PDF2 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In order to solve the shortcomings of existing various solar selective absorption films, such as poor heat resistance, weather resistance, wear resistance, and low life, the present invention provides a film with good selective absorption performance, heat resistance, corrosion resistance, and heat resistance. Wear and weather resistance are good, suitable for the preparation method of the film system of the gradient microstructure silicon thin film series solar photothermal conversion film system of industrial continuous production, in order to overcome the deficiencies of the existing technology

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing silicon thin film light and heat absorber
  • Method for preparing silicon thin film light and heat absorber
  • Method for preparing silicon thin film light and heat absorber

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] A method for preparing a silicon thin film photothermal absorber, comprising the following steps:

[0033] Step 1 Clean the stainless steel substrate 1, dry it with high-pressure nitrogen, place it in the vacuum coating chamber, and evacuate it to 10 -4 Pa, fill in the working gas argon, the gas flow rate is 200SCCM, adjust the gate valve to the working pressure of 1Pa, turn on the intermediate frequency pulse power supply, stimulate the plasma to clean the surface of the workpiece for 10 minutes, turn on the chromium oxide target baffle and the electron emission source , after 20 minutes of deposition by PEMS method, the chromium trioxide target baffle and the electron emission source are closed to form the first chromium trioxide thin film layer 2 with a thickness of 200nm 。

[0034] Step 2 Open the silver target baffle and the electron emission source, and close the silver target baffle and the electron emission source after 5 minutes of deposition to form a silver ...

Embodiment 2

[0040] Step 1 Clean the stainless steel substrate, dry it with high-pressure nitrogen, place it in the vacuum coating chamber, and evacuate it to 10 -4 Pa, fill in the working gas argon, the gas flow rate is 250SCCM, adjust the gate valve to the working pressure of 1.5Pa, turn on the intermediate frequency pulse power supply, stimulate the plasma to clean the workpiece surface for 10 minutes, turn on the chromium oxide target baffle and electron emission Source, after 15 minutes of deposition by PEMS method, close the chromium trioxide target baffle and the electron emission source to form the first chromium trioxide thin film layer with a thickness of 180nm.

[0041] Step 2: Turn on the silver target baffle and the electron emission source, and close the silver target baffle and the electron emission source after 3 minutes of deposition to form a silver thin film layer with a thickness of 170nm.

[0042] Step 3: Open the chromium trioxide target baffle and the electron emissi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Grain sizeaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to view more

Abstract

A method of preparing a silicon thin film light and heat absorber comprises the following steps: depositing a first chromium sesquioxide thin film on a stainless steel substrate by a PEMS process; depositing a silver thin film on the first chromium sesquioxide thin film by the PEMS process; depositing a second chromium sesquioxide thin film on the silver thin film by the PEMS process; preparing a polycrystalline silicon layer on the second chromium sesquioxide thin film by the PEMS process, and sequentially preparing a microcrystalline silicon layer, a nano silicon layer and an amorphous silicon layer on the polycrystalline silicon layer by an HTCVD method to form a gradient micro-structure silicon absorption layer; and depositing a silicon nitride thin film on the amorphous silicon layer by the PEMS process to form a silicon nitride antireflection layer. A silicon thin film light and heat absorber prepared by the method has both good selective absorption performance and good heat resistance, corrosion resistance, abrasion resistance and weather resistance, and is suitable for preparing a film system of gradient micro-structure silicon thin film series solar photo-thermal conversion thin films obtained through industrialized continuous production.

Description

technical field [0001] The present invention relates to a kind of preparation method, especially a kind of preparation method of multi-layer film material, exactly a kind of ceramic film / microstructure silicon film / ceramic film / metal film / ceramic film multi-layer structure photothermal absorber Preparation. technical background [0002] Silicon thin film materials, with their excellent optical and physical and chemical properties, are extremely important basic materials for the microelectronics and optoelectronics industries, and are widely used in semiconductors, microelectronics, optoelectronics, information display, optical communications, lasers, precision machinery, national defense and domestic Major scientific projects and many other fields at home and abroad. Silicon thin film materials have been widely used in photovoltaic and photothermal fields recently. [0003] In the continuous practice of people's research on high-performance, high-stability, and long-life s...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L31/18
CPCH01L31/02168H01L31/18H01L21/02266H01L21/02472H01L21/02491H01L21/02532H01L21/0262Y02E10/50Y02P70/50
Inventor 朱跃钊刘宏王银峰陆蓓蓓
Owner NANJING UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap