Organic electroluminescent device and preparation method thereof
An electroluminescent device and a luminescent technology, which are applied in the fields of electric solid-state devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve organic functional layer damage, poor film-forming properties of lithium fluoride, and reduce the probability of electron and hole recombination And other issues
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[0034] The preparation method of the organic electroluminescent device 100 according to an embodiment includes the following steps:
[0035] In step S110 , a hole injection layer 20 , a hole transport layer 30 , a light emitting layer 40 , an electron transport layer 50 and an electron injection layer 60 are sequentially formed on the surface of the anode 10 .
[0036] The anode 10 is indium tin oxide glass (ITO), fluorine-doped tin oxide glass (FTO), aluminum-doped zinc oxide glass (AZO) or indium-doped zinc oxide glass (IZO), preferably ITO, the thickness of the anode 10 It is 50 nm to 300 nm, preferably 110 nm.
[0037] In this embodiment, before the hole injection layer 20 is formed on the surface of the anode 10, the anode 10 is pre-treated. The pre-treatment includes: subjecting the anode 10 to photolithography, cutting it into a required size, using detergent, deionization Water, acetone, ethanol, and isoacetone were each ultrasonically cleaned for 15 minutes to remove...
Embodiment 1
[0052] Structure ITO / MoO prepared in this example 3 / NPB / Alq 3 / Bphen / RbCl:Bphen / FeCl 3 : 2,6Dczppy / Ag organic electroluminescent device, in this embodiment and the following embodiments, " / " indicates a layer, and ":" indicates doping.
[0053] Magnetron sputtering anode on glass substrate, the material is ITO, and then photolithographic processing, cut to the required size, followed by detergent, deionized water, acetone, ethanol, isopropanol and ultrasonic for 15min each to remove the glass surface After cleaning, conduct appropriate treatment on the conductive substrate: oxygen plasma treatment, treatment time is 5min, power is 30W; thickness is 80nm, hole injection layer is evaporated, and the material is MoO 3 , the thickness is 25nm; the vapor-deposited hole transport layer is made of NPB and the thickness is 55nm; the vapor-deposited light-emitting layer is made of Alq 3 , the thickness is 16nm; the electron transport layer is evaporated, the material is Bphen, and ...
Embodiment 2
[0060] The structure prepared in this example is ITO / V 2 O 5 / NPB / DCJTB / TPBi / Rb 2 CO 3 :Alq 3 / FeBr 3 : Organic electroluminescent devices of TRZ4 / Au.
[0061] Magnetron sputtering anode on glass substrate, the material is ITO, and then photolithography treatment, cut to the required size, followed by detergent, deionized water, ultrasonic for 15min, to remove organic pollutants on the glass surface; Hole injection layer: material is V 2 O 5 , the thickness is 40nm; the vapor-deposited hole transport layer: the material is NPB, the thickness is 45nm; the vapor-deposited light-emitting layer: the selected material is DCJTB, the thickness is 8nm; the vapor-deposited electron transport layer, the material is TPBi, the thickness is 65nm; The injection layer includes a rubidium compound doped layer and an iron salt doped layer, and the rubidium compound doped layer is deposited by thermal resistance evaporation, and the material is Rb 2 CO 3 :Alq 3 , Rb 2 CO 3 with Alq ...
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