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Low temperature polysilicon thin film transistor and its preparation method

A technology of low-temperature polysilicon and thin-film transistors, which is applied in the direction of transistors, semiconductor/solid-state device manufacturing, semiconductor devices, etc., and can solve the problems of reducing the yield rate of thin-film field-effect transistor arrays and unfavorable applications.

Active Publication Date: 2018-02-13
TRULY HUIZHOU SMART DISPLAY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The above-mentioned existing technologies not only put forward high requirements on the yellow light process including exposure machine, etching machine and developing machine, but also reduce the yield rate of the entire thin film field effect transistor array (TFT array), which is not conducive to application

Method used

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  • Low temperature polysilicon thin film transistor and its preparation method
  • Low temperature polysilicon thin film transistor and its preparation method
  • Low temperature polysilicon thin film transistor and its preparation method

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preparation example Construction

[0065] Correspondingly, the present application also provides a method for preparing a low-temperature polysilicon thin film transistor, comprising the following steps:

[0066] 1) Depositing a heat conduction layer on the substrate, applying a yellow light process to the heat conduction layer, and thinning the heat conduction layer so that the heat conduction layer has several strip-shaped protrusions;

[0067] 2) depositing a planarization layer on the heat conducting layer having several strip-shaped protrusions;

[0068] 3) Depositing an amorphous silicon layer on the planarization layer, and then performing excimer laser annealing on the amorphous silicon layer to obtain a low-temperature polysilicon film, and then applying a yellow light process to the low-temperature polysilicon film to obtain several The active layer of the active channel; the position of each of the strip-shaped protrusions is outside the corresponding side of the position of each of the active channe...

Embodiment 1

[0097] According to the technical parameters of AMOLED, determine the size of each sub-pixel and the position of TFT inside the sub-pixel.

[0098]Aluminum oxide was deposited using a sputter to deposit a thickness of thermal buffer layer.

[0099] Through the yellow light process, the heat conduction buffer layer is thinned to form several strip-shaped protrusions; the heat conduction layer pattern is as follows Figure 1 to Figure 3 shown. In the yellow light process, the laser scans from right to left, and the position of each of the strip-shaped protrusions is located on the right side of the position of each of the active channels. The length of each of the strip-shaped protrusions is greater than the corresponding width of each of the active channels, and the width of each of the strip-shaped protrusions is 0.5 μm; the thickness of the heat-conducting buffer layer after thinning is

[0100] SiO deposited by sol-gel method 2 , to deposit a thickness of the planar...

Embodiment 2

[0107] According to the technical parameters of AMOLED, determine the size of each sub-pixel and the position of TFT inside the sub-pixel.

[0108] Silicon carbide is deposited using a sputter to deposit a thickness of thermal buffer layer.

[0109] Through the yellow light process, the heat conduction buffer layer is thinned to form several strip-shaped protrusions; the heat conduction layer pattern is as follows Figure 1 to Figure 3 shown. In the yellow light process, the laser scans from right to left, and the position of each of the strip-shaped protrusions is located on the right side of the position of each of the active channels. The length of each strip-shaped protrusion is greater than the width of each corresponding active channel, and the width of each strip-shaped protrusion is 1 μm; the thickness of the heat-conducting buffer layer after thinning is

[0110] The acrylic material monomer is deposited by spin coating, and then polymerized under UV light, so a...

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Abstract

The invention provides a low-temperature poly-silicon thin film transistor and a preparation method of the low-temperature poly-silicon thin film transistor. The LTPS TFT sequentially comprises a substrate, a heat conducting layer provided with a plurality of strip-shaped protrusions, a planarization layer and an active layer with a plurality of active channels, wherein the active layer is formed by carrying out the yellow laser process on a low-temperature poly-silicon thin film, a gate insulator, a gate electrode, an interlayer insulator, a source electrode and a drain electrode are arranged on the active layer, each strip-shaped protrusion is located outside one side of the position where the corresponding active channel is located, each strip-shaped protrusion and the corresponding active channel are adjacent to each other in position, and the length of each strip-shaped protrusion is larger than the width of the corresponding active channel. According to the low-temperature poly-silicon thin film transistor and the preparation method of the low-temperature poly-silicon thin film transistor, because large poly-silicon crystal grains can be obtained and the active channels of the thin film transistor can be completely located inside one single crystal grain, adverse impact of a poly-silicon crystal grain boundary on carrier mobility is avoided, the leakage current phenomenon caused by the crystal grain boundary is eliminated, and a simplest pixel circuit driving structure can be implemented.

Description

technical field [0001] The present application relates to the technical field of polysilicon thin film transistors, in particular to a low-temperature polysilicon thin film transistor and a preparation method thereof. Background technique [0002] AMOLED (Active Matrix Organic Light Emitting Diode) is an active matrix organic light-emitting diode, which has the advantages of self-illumination, wide color gamut, high contrast, fast response and flexible display. It is considered as TFT-LCD (Thin Film Transistor-Liquid Crystal Display, Thin Film Field Effect Transistor-LCD) is an ideal replacement. Existing commercial AMOLED products are mainly used in smartphones, and are driven by LTPS TFT (Low Temperature Poly Silicon Thin Film Transistor, low temperature polysilicon thin film field effect transistor) backplane. Among them, the low-temperature polysilicon technology is a process of forming a polysilicon film on a substrate at a temperature lower than 600°C, which has the a...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/786H01L21/336
CPCH01L23/367H01L29/66757H01L29/78675
Inventor 何剑苏君海李建华
Owner TRULY HUIZHOU SMART DISPLAY
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