Low-temperature poly-silicon thin film transistor and preparation method thereof
A low-temperature polysilicon, thin film transistor technology, applied in transistors, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve problems such as unfavorable applications and reducing the yield of thin-film field-effect transistor arrays
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[0065] Correspondingly, the present application also provides a method for preparing a low-temperature polysilicon thin film transistor, comprising the following steps:
[0066] 1) Depositing a heat conduction layer on the substrate, applying a yellow light process to the heat conduction layer, and thinning the heat conduction layer so that the heat conduction layer has several strip-shaped protrusions;
[0067] 2) depositing a planarization layer on the heat conducting layer having several strip-shaped protrusions;
[0068] 3) Depositing an amorphous silicon layer on the planarization layer, and then performing excimer laser annealing on the amorphous silicon layer to obtain a low-temperature polysilicon film, and then applying a yellow light process to the low-temperature polysilicon film to obtain several The active layer of the active channel; the position of each of the strip-shaped protrusions is outside the corresponding side of the position of each of the active channe...
Embodiment 1
[0097] According to the technical parameters of AMOLED, determine the size of each sub-pixel and the position of TFT inside the sub-pixel.
[0098]Aluminum oxide was deposited using a sputter to deposit a thickness of thermal buffer layer.
[0099] Through the yellow light process, the heat conduction buffer layer is thinned to form several strip-shaped protrusions; the heat conduction layer pattern is as follows Figure 1 to Figure 3 shown. In the yellow light process, the laser scans from right to left, and the position of each of the strip-shaped protrusions is located on the right side of the position of each of the active channels. The length of each of the strip-shaped protrusions is greater than the corresponding width of each of the active channels, and the width of each of the strip-shaped protrusions is 0.5 μm; the thickness of the heat-conducting buffer layer after thinning is
[0100] SiO deposited by sol-gel method 2 , to deposit a thickness of the planar...
Embodiment 2
[0107] According to the technical parameters of AMOLED, determine the size of each sub-pixel and the position of TFT inside the sub-pixel.
[0108] Silicon carbide is deposited using a sputter to deposit a thickness of thermal buffer layer.
[0109] Through the yellow light process, the heat conduction buffer layer is thinned to form several strip-shaped protrusions; the heat conduction layer pattern is as follows Figure 1 to Figure 3 shown. In the yellow light process, the laser scans from right to left, and the position of each of the strip-shaped protrusions is located on the right side of the position of each of the active channels. The length of each strip-shaped protrusion is greater than the width of each corresponding active channel, and the width of each strip-shaped protrusion is 1 μm; the thickness of the heat-conducting buffer layer after thinning is
[0110] The acrylic material monomer is deposited by spin coating, and then polymerized under UV light, so a...
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