Microwave integrated amplifier circuit and manufacturing method thereof

Abstract

The invention discloses a microwave integrated amplifier circuit and a manufacturing method thereof. The microwave integrated amplifier circuit comprises a gallium nitride high electron mobility transistor and an oscillation stabilizing circuit connected with the gallium nitride high electron mobility transistor. The gallium nitride high electron mobility transistor and the oscillation stabilizing circuit share the same substrate and the same epitaxy structure on the substrate, and the gallium nitride high electron mobility transistor and the oscillation stabilizing circuit are isolated through an isolating area in the epitaxy structure. The designing and manufacturing of resistors and capacitors in the oscillation stabilizing circuit are compatible with process of the gallium nitride high electron mobility transistor, so that the resistors and the capacitors of the oscillation stabilizing circuit and the gallium nitride high electron mobility transistor can be formed simultaneously. Thus, the manufacturing complexity is reduced, and the cost is saved. In addition, the stability of the amplifier circuit is improved, and an oscillation restraining function is achieved. Furthermore, the size and the cost of the amplifier circuit can be reduced, and the designing difficulty of a follow-up microwave match circuit can be reduced. In addition, the effects of lead inductance can be avoided, and the performance of the gain of the amplifier can be improved.

Description

technical field [0001] The invention relates to the technical field of microelectronics, in particular to a microwave integrated amplifier circuit and a manufacturing method thereof. Background technique [0002] Microwave amplifiers employing transistor devices may be referred to as transistor amplifiers. Among transistor devices, the high electron mobility transistor (HEMT) based on gallium nitride (GaN) material has high electron saturation drift speed and breakdown field strength due to the large band gap of gallium nitride material. It has the characteristics of high temperature, good thermal conductivity, etc. It has obvious advantages in the application of high temperature, high frequency, high voltage and high power. It has broad application prospects in the fields of wireless communication and radar system applications. It has become a new research and application hotspot in recent years. [0003] Figure 1a is a schematic circuit diagram of a prior art transistor ...

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Problems solved by technology

However, the method is still immature, and there are still some problems. First, the doping method generally adopts the ion implantation method, and the process is relatively complicated. In addition to optimizing the implantation conditions, high-temperature annealing is also required to activate the dopant. The process of GaN high electron mobility transistor is not compatible, and its performance may be seriously reduced; secondly, the thin film deposition method requires special sputtering equipment and special sputtering materials, such as TaN, NiCr or other alloy materials, and The process of gallium nitride high electron mobility transistors is also incompatible, which increases the process complexity and cost; third, when making thin film capacitors, it is necessary to deposit a layer of insulating dielectric layer first, and then deposit a layer of conductor as the lower electrode, and then Then deposit a layer of dielectric, and finally deposit the top electrode. The type and thickness of the dielectric are relatively high, and it is not compatible with the process of gallium nitride high electron mobility transistors. It needs to be fabricated separately, which increases the complexity of the process and cost

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