A kind of aqueous photoresist stripping solution

A photoresist and stripping solution technology, applied in the field of water-based photoresist stripping solution, can solve the problems of serious metal layer erosion, high use cost and high use temperature, and achieves fast stripping rate, reduced use cost, and use energy consumption. low effect

Active Publication Date: 2016-08-17
JIANGYIN RUNMA ELECTRONICS MATERIAL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] CN102944986A discloses a polyimide stripping solution for chips mixed by pyrrolidone, sulfoxide, alcohol ether, quaternary ammonium, alkali and water in a certain proportion. The stripping solution can prevent metal materials from being damaged. The temperature is 70-90°C, and the alkali contained in the stripping solution is an inorganic strong alkali selected from sodium hydroxide and potassium hydroxide. The solubility of inorganic strong alkali in organic solvents is low, and it will corrode the metal layer more seriously. ; CN187543B discloses a quaternary ammonium hydroxide, at least one water-soluble organic solvent selected from glycols and glycol ethers, selected from sulfoxides, sulfones, amides, internal At least one non-amine water-soluble organic solvent of amides and imidazolidinones does not contain water to ensure that it does not damage the electrode material copper, but the stripping solution needs to be constantly replenished with organic matter when used, and the use cost is high. As can be seen from the examples, the use temperature of the photoresist stripper is 60°C
Also disclose a kind of photoresist stripping solution containing surfactant, organic amine, organic solvent, chelating agent, corrosion inhibitor and pure water among CN101295144A, wherein, surfactant adopts nonionic surfactant fatty alcohol polyoxyethylene Polyoxypropylene ether, its corrosion inhibitor uses sugar alcohol, and its service temperature is also high, up to 60 ° C, high energy consumption

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] Embodiment is a kind of aqueous photoresist stripping solution, and aqueous photoresist stripping solution is made up of following components, and the weight percent of component is: diethylene glycol monomethyl ether 30%, ethylene glycol 20%, N, N - 10% dimethylacetamide, 10% dimethyl sulfone, 1% tetramethylammonium hydroxide, 0.05% sodium alkylbenzenesulfonate, and the balance is pure water.

[0029] Mix the above-mentioned raw materials evenly.

[0030] Cleaning method: at 25-45°C, put the wafer containing the photoresist into the embodiment 1 of the present invention and clean it for 100 seconds, then rinse it with ultrapure water for 3 minutes, and finally dry it with high-purity nitrogen.

[0031] Cleaning effect evaluation method: place the dried wafer under a 1000X microscope to observe whether there is photoresist residue, and place the dried wafer under a 10000X microscope to observe whether the surface aluminum and copper metal layers are corroded .

Embodiment 2

[0033] Embodiment is a kind of aqueous photoresist stripping solution, aqueous photoresist stripping solution is made up of following components, and the weight percent of component is: diethylene glycol monobutyl ether 35%, propylene glycol 15%, N-methyl- 15% 2-pyrrolidone, 7.5% dimethyl sulfoxide, 0.5% tetramethylammonium hydroxide, 0.03% sodium alkyl polyoxyethylene ether sulfate, 0.045% sodium alkyl sulfonate, and the balance is pure water.

[0034] The preparation, cleaning method and cleaning effect evaluation method are the same as in Example 1.

Embodiment 3

[0036] Embodiment is a kind of water-based photoresist stripping liquid, water-based photoresist stripping liquid is made up of following components, and the weight percentage of component is: propylene glycol monomethyl ether 40%, propylene glycol 10%, N,N-dimethyl formaldehyde Amide 20%, diethylsulfone 7.5%, tetraethylammonium hydroxide 0.1%, alkyl polyoxyethylene ether sodium carboxylate 0.05%, fatty acid sodium 0.05%, and the balance is pure water.

[0037] The preparation, cleaning method and cleaning effect evaluation method are the same as in Example 1.

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PUM

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Abstract

The invention discloses a water-based photoresist stripping solution. The water-based photoresist stripping solution is prepared by mixing alcohol ether, glycol, water-soluble organic solvent, quaternary ammonium hydroxide, surfactant and pure water in a certain proportion. become. The stripping liquid has a moderate stripping speed, and under a microscope of 1000 times, there is no photoresist residue on the wafer surface after peeling; under a microscope of 10000 times, there is almost no corrosion to the aluminum and copper metal layers; Compared with above 60°C~90°C, the peeling liquid has a faster peeling rate at a service temperature of 25~45°C, lower energy consumption, low cost of use, long life, and environmental protection.

Description

technical field [0001] The invention relates to the technical field of electronic chemicals in liquid crystal display thin film transistor (TFT) and touch screen industries, in particular to a water-based photoresist stripping solution. Background technique [0002] In the manufacturing process of liquid crystal panels and touch screens, it is also necessary to form multi-layer precise microcircuits on silicon wafers or glass substrates through multiple graphic mask exposure and etching processes. After the microcircuits are formed, they are further stripped with photoresist. The liquid removes the photoresist that coats the protected areas of the microcircuit as a mask. In the production of capacitive touch screens, after sputtering the underlying ITO coating on the glass substrate by vacuum coating, it is necessary to use spin coating to make photoresist layer, exposure, development and demoulding on the ITO glass substrate for many times; liquid crystal display In the ma...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/42
Inventor 戈士勇
Owner JIANGYIN RUNMA ELECTRONICS MATERIAL
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