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Preparation method of manganese-doped titanium dioxide film for strengthening photoelectric response of visible light

A titanium oxide thin film, photoelectric response technology, applied in the direction of sustainable manufacturing/processing, circuits, electrical components, etc., can solve the problem of not preparing Mn-doped titanium oxide thin film, and achieve the effect of improving electrical properties

Inactive Publication Date: 2013-09-04
HUBEI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Through the search of existing patents, it is found that except for the report on the preparation of Mn-doped titanium dioxide powder by sol-gel method (nano-scale manganese ion-doped titanium dioxide catalyst and its preparation method, patent number CN101579626), there is no preparation There are few reports on the preparation of Mn-doped titanium oxide thin films by magnetron sputtering.

Method used

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  • Preparation method of manganese-doped titanium dioxide film for strengthening photoelectric response of visible light
  • Preparation method of manganese-doped titanium dioxide film for strengthening photoelectric response of visible light
  • Preparation method of manganese-doped titanium dioxide film for strengthening photoelectric response of visible light

Examples

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Effect test

Embodiment example 1

[0025] Put the substrate into acetone, alcohol, and deionized water for 15 minutes, and then dry it for later use. Fix the Ti target with a purity of 99.999% at the DC position of the cathode of the magnetron sputtering system, fix the Mn metal target at the radio frequency position of the cathode of the reactive magnetron sputtering system, and fix the cleaned substrate in the vacuum chamber of the magnetron sputtering system On the base of the chamber, adjust the distance between the target and the substrate to be 65mm. Before preparation, the substrate was splash cleaned for 15 minutes, the vacuum chamber was baked, and the background vacuum was evacuated to 1×10 -5 After Pa, the substrate was heated to 250° C., 20 sccm and 15 sccm of argon gas and oxygen gas were fed respectively, and the pressure of the chamber was adjusted to 5 mtorr. Adjust the power of the DC Ti target to 315W, and the power of the RF Mn target to 0W, and take out the sample from the vacuum chamber af...

Embodiment example 2

[0028] Put the substrate into acetone, alcohol, and deionized water for 15 minutes, and then dry it for later use. Fix the Ti target with a purity of 99.999% at the DC position of the cathode of the magnetron sputtering system, fix the Mn metal target at the radio frequency position of the cathode of the reactive magnetron sputtering system, and fix the cleaned substrate in the vacuum chamber of the magnetron sputtering system On the pedestal, adjust the distance between the target and the substrate to be 65mm. Before preparation, the substrate was splash cleaned for 15 minutes, the vacuum chamber was baked, and the background vacuum was evacuated to 1×10 -5 After Pa, the substrate was heated to 250° C., 20 sccm and 15 sccm of argon gas and oxygen gas were fed respectively, and the pressure of the chamber was adjusted to 5 mtorr. Adjust the power of the DC Ti target to 315W, and the power of the RF Mn target to 60W, and take out the sample from the vacuum chamber after contin...

Embodiment example 3

[0031] Put the substrate into acetone, alcohol, and deionized water for 15 minutes, and then dry it for later use. Fix the Ti target with a purity of 99.999% at the DC position of the cathode of the magnetron sputtering system, fix the Mn metal target at the radio frequency position of the cathode of the reactive magnetron sputtering system, and fix the cleaned substrate in the vacuum chamber of the magnetron sputtering system On the pedestal, adjust the distance between the target and the substrate to be 65mm. Before preparation, the substrate was splash cleaned for 15 minutes, the vacuum chamber was baked, and the background vacuum was evacuated to 1×10 -5 After Pa, the substrate was heated to 550° C., 20 sccm and 15 sccm of argon gas and oxygen gas were fed respectively, and the pressure of the chamber was adjusted to 5 mtorr. Adjust the power of the DC Ti target to 378W, and the power of the RF Mn target to 75W, and take out the sample from the vacuum chamber after contin...

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Abstract

The invention provides a preparation method of a manganese-doped titanium dioxide film for strengthening photoelectric response of visible light. The preparation method comprises the following steps: with a magnetic control cosputtering method of direct-current radio-frequency reaction, taking a silicon chip, a quartz plate, FTO (Fluorine-doped Tin Oxide), or ITO (Indium-Tin Oxide) material as a substrate; taking a high-purity Ti target as a magnetic control direct-current sputtering cathode, taking an Mn metal target as the cathode of a reaction magnetic control sputtering radio-frequency end, taking the substrate as the anode of the reaction magnetic control sputtering radio-frequency end, taking O2 as reaction gas, taking Ar as sputtering gas, and controlling relative contents of Ti and Mn and the thickness of the film by adjusting parameters such as reaction temperature, direct-current and radio-frequency end power, oxygen flow and reaction time. The preparation method is simple, easy to operate, high in controllability and high in film forming quality; the prepared manganese-doped titanium dioxide film can realize absorption of a visible light region, and the electrical property is greatly improved; and the manganese-doped titanium dioxide film can be widely applied to the fields of photocatalysis and photovoltaic energy, and can be used as an optical absorption layer or an electronic transmission layer of a solar cell.

Description

technical field [0001] The invention belongs to the field of preparation of titanium oxide thin films, and in particular relates to a preparation method of a manganese-doped titanium dioxide thin film which enhances the photoelectric response of visible light. Background technique [0002] Since it was discovered in 1972 that titanium oxide can produce oxygen and hydrogen under ultraviolet light irradiation, titanium oxide, as an emerging functional material, has attracted widespread attention and has been applied in photocatalysis, dye-sensitized solar cells, photovoltaic power generation, sensors and other fields. Titanium oxide is a wide-bandgap semiconductor material with an optical bandgap of 3.0-3.2eV, corresponding to the ultraviolet region of the solar spectrum (accounting for only 4% of the solar spectrum), unable to use visible light and near-infrared light region (accounting for solar radiation 50% of the total energy), at the same time, the conductivity and mobi...

Claims

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Application Information

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IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 夏晓红高云郭美澜王卓邵国胜
Owner HUBEI UNIV
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