N-type MOS field-effect transistor and formation method thereof, semiconductor device and formation method of semiconductor device

Abstract

The invention provides an n-type MOS (metal oxide semiconductor) field-effect transistor and a formation method thereof, a semiconductor device and a formation method of the semiconductor device. The formation method of the n-type MOS field-effect transistor comprises the steps that a semiconductor substrate is provided; a grid medium layer and a grid electrode are formed on the surface of the semiconductor substrate sequentially, and serve as masking films; first ion implantation is conducted in the semiconductor substrate; lightly doped source drain regions are formed; the grid medium layer and the grid electrode serve as the masking films; second ion implantation is conducted in the semiconductor substrate; halo regions are formed, and surround the lightly doped source drain regions; side walls are formed on the two sides of the grid medium layer and the grid electrode; the grid electrode and the side walls serve as masking films; third ion implantation is conducted in the semiconductor substrate; heavily doped source drain regions are formed; composite implantation of nitrogen, germanium, carbon and fluorine ions is conducted in the halo regions or the heavily doped source drain regions; rapid annealing is conducted; and the ions in the lightly doped source drain regions, the halo regions and the heavily doped source drain regions are activated. Overlap capacitance of the formed n-type MOS field-effect transistor is reduced.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to an n-type MOS field effect transistor used for an inverter and a forming method thereof, a semiconductor device and a forming method thereof. Background technique [0002] Ring Oscillator (Ring Oscillator, referred to as RO) is a semiconductor device that is widely used in integrated circuits to provide clock signals for various digital signal processing modules, so the frequency of the ring oscillator determines the operating speed of the integrated circuit , is an important semiconductor device that affects the performance of integrated circuits. [0003] The ring oscillator consists of an odd number of inverters in series to form a loop, and the frequency of the ring oscillator is: f=1 / (T d *N), where T d is the delay time of a single inverter, N is the number of inverters in the series loop, it can be seen that in order to increase the frequency of the r...

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Problems solved by technology

[0007] However, the overlap capacitance (overlap capacitance) of the n-type MOS field effect transistor formed by the prior art is too large, resulting in a relatively large capacitance of the n-type MOS field effect transistor, so that the semiconductor device composed of the n-type MOS field effect transistor For example, the frequency of the inverter is reduced, reducing the operating speed of the integrated circuit

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