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Method for preparing ZnO/Al film on solar cell without introduced electrode

A technology for solar cells and introduction of electrodes, applied in sustainable manufacturing/processing, circuits, electrical components, etc., to achieve the effects of excellent optoelectronic properties, improved conversion efficiency, and easy control of the deposition process

Active Publication Date: 2013-04-03
SHENYANG INST OF ENG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, although metal electrodes have relatively good electrical conductivity, there are many problems. The biggest problem is that because the metal electrodes themselves are opaque, a large part of the light is reflected and cannot be absorbed. The conversion efficiency of solar cells in industrial production is generally between 14-19%. Therefore, the development of new transparent conductive materials to replace traditional metal electrodes and improve the efficiency of solar cells has become the most critical research hotspot. question
[0004]The ZnO thin film is a new type of wide bandgap compound semiconductor material, the raw material is easy to get and cheap, and has a higher melting point, exciton binding energy and good electromechanical Coupling and low electron-induced defects. In addition, the epitaxial growth temperature of the film is low, which is beneficial to reduce equipment costs, inhibit solid phase out-diffusion, improve film quality, and is easy to achieve doping. Among them, ZnO / Al composite back The replacement of the traditional aluminum electrode by the electrode can enhance the light absorption, thereby increasing the short-circuit current, improving the conversion efficiency of the solar cell, and improving the stability of the cell. At present, there are few domestic researches on the composite back electrode material, and its preparation method is not mature. , such as the chemical sol-gel method, the problem is that it is difficult to control the thickness of the film and the uniformity of doping, such as molecular beam epitaxy, the problem is that the crystallinity of the material and the concentration of doping particles are difficult to control

Method used

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  • Method for preparing ZnO/Al film on solar cell without introduced electrode
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  • Method for preparing ZnO/Al film on solar cell without introduced electrode

Examples

Experimental program
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Effect test

Embodiment 1

[0024] Taking the solar cells without electrodes as the substrate, the substrate is ultrasonically cleaned with acetone, ethanol and deionized water in sequence, dried with nitrogen, and sent to the magnetron sputtering reaction chamber;

[0025] Vacuumize the magnetron sputtering reaction chamber to 9.0×10 -4 After Pa, the substrate is heated to 100°C, and the flow rate of argon gas is adjusted so that the pressure reaches 6Pa. Magnetron sputtering is performed with pure Al as the target material, the sputtering power is controlled at 100W, and the sputtering time is 4min, and a thickness of 258nm is obtained on the substrate. Al thin film;

[0026] Clean the above-mentioned substrate with Al film sputtered with deionized water, then place the substrate in a vapor deposition chamber and heat it to 200°C, and simultaneously feed oxygen and Zn(CH 2 CH 3 ) 2 Argon gas, wherein the ratio of argon and oxygen flow rate is 1: 100, control the microwave power to 650W, deposit a 5...

Embodiment 2

[0029] Taking the solar cells without electrodes as the substrate, the substrate is ultrasonically cleaned with acetone, ethanol and deionized water in sequence, dried with nitrogen, and sent to the magnetron sputtering reaction chamber;

[0030] Vacuumize the magnetron sputtering reaction chamber to 9.0×10 -4 After Pa, the substrate is heated to 100°C, and the flow rate of argon gas is adjusted so that the pressure reaches 6Pa. Magnetron sputtering is performed with pure Al as the target material. Al thin film;

[0031] Clean the above-mentioned substrate with Al film sputtered with deionized water, then place the substrate in a vapor deposition chamber and heat it to 200°C, and simultaneously introduce oxygen and Zn(CH 2 CH 3 ) 2 Argon gas, wherein the ratio of argon and oxygen flow rate is 1: 100, control the microwave power to 650W, deposit a 50nm thick ZnO film on the substrate with Al film, then clean the vapor deposition chamber with high-purity nitrogen gas, take o...

Embodiment 3

[0034] Taking the solar cells without electrodes as the substrate, the substrate is ultrasonically cleaned with acetone, ethanol and deionized water in sequence, dried with nitrogen, and sent to the magnetron sputtering reaction chamber;

[0035] Vacuumize the magnetron sputtering reaction chamber to 9.0×10 -4 After Pa, heat the substrate to 100°C, adjust the flow rate of argon gas to make the pressure reach 6Pa, use pure Al as the target material for magnetron sputtering, control the sputtering power to 150W, and sputtering time for 5min to obtain a thickness of 50nm on the substrate. Al thin film;

[0036] Clean the above-mentioned substrate with Al film sputtered with deionized water, then place the substrate in a vapor deposition chamber and heat it to 200°C, and simultaneously introduce oxygen and Zn(CH 2 CH 3 ) 2 argon, wherein the ratio of argon and oxygen flow is 1: 105, depositing a 100nm thick ZnO film on a substrate with an Al film, then cleaning the vapor depos...

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Abstract

The invention belongs to the field of novel transparent conducting materials and particularly relates to a method for preparing ZnO / Al film on a solar cell without an introduced electrode. The solar cell without the introduced electrode is used as a substrate, cleaned before being sent into a magnetron sputtering reaction chamber, pure Al is used as target for magnetron sputtering to obtain an Al film 20-300 nanometers in thickness, the substrate is then placed in a vapor deposition chamber, oxygen and with argon with Zn(CH2CH3)2 are fed into the vapor deposition chamber, a ZnO film 50-600 nanometers in thickness is obtained after deposition, and at last, under oxygen atmosphere, annealing treatment is performed to the substrate with the ZnO film and the Al film at 400-600 DEG C to obtain the ZnO / Al film. The method has the advantages that the preparation process is simple, the deposition is easy to control, the prepared transparent conducting film has good uniformity and excellent photoelectric performance, the transparent conducting film is used as back electrode of the solar cell to replace the traditional aluminum electrodes, and conversion efficiency of the solar cell is further improved.

Description

technical field [0001] The invention belongs to the field of novel transparent conductive materials, and in particular relates to a method for preparing a ZnO / Al thin film on a solar battery sheet without introducing electrodes. Background technique [0002] With the development of society and the rapid development of science and technology, the demand for functional materials is increasing. New functional materials have become the key to the development of new technologies and emerging industries. With the development of industries such as solar energy, flat panel display and semiconductor lighting, a new Functional materials—transparent conductive materials have emerged and developed accordingly. [0003] A solar cell is a photoelectric semiconductor sheet that uses sunlight to generate electricity directly. As long as it is exposed to light, it can output voltage and current in an instant. The electrode of a traditional solar cell is made by screen printing, and the cond...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 张铁岩鞠振河张东赵琰李昱材
Owner SHENYANG INST OF ENG
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