Single-end-operated subthreshold storage unit circuit
A memory cell circuit and sub-threshold technology, which is applied in the direction of information storage, static memory, digital memory information, etc., can solve the problem that the memory cell is difficult to write, and achieve the goal of improving stability, enhancing robustness, and improving anti-noise ability Effect
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment Construction
[0022] see figure 1 , The storage unit circuit of the present invention is provided with two PMOS transistors P1, P2 and seven NMOS transistors N1-N7. The body terminals of the two PMOS transistors are connected to the power supply voltage Vdd, and the body terminals of the seven NMOS transistors are grounded; the source of the PMOS transistor P1 is connected to Vdd, and the drain of the PMOS transistor P1 is connected to the drains of the NMOS transistors N3 and N4 Together, the sources of NMOS transistors N3 and N4 are connected together and then connected to the drain of NMOS transistor N1, the source of N1 is grounded, and the gates of PMOS transistor P1 and NMOS transistor N1 are connected together to NMOS transistor N2 and PMOS transistor The drain of P2 is connected, the gate of NMOS transistor N3 is connected with row write control signal RWR, the gate of NMOS transistor N4 is connected with column write control signal CWR; NMOS transistor N2 and PMOS transistor P2 for...
PUM
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com