MOSFET-TFET hybrid 11T SRAM unit circuit
A unit circuit and hybrid technology, applied in the direction of information storage, static memory, digital memory information, etc., can solve the problems of affecting the stability of storage nodes and increasing the static power consumption of the circuit, so as to improve stability and reduce static power consumption , Improve the effect of writing ability
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[0024] The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
[0025] The used basic device of traditional SRAM memory unit circuit is MOSFET, and the used basic device of MOSFET-TFET hybrid type 11T SRAM unit circuit proposed by the present invention is tunneling field effect transistor (TFET) and metal oxide semiconductor field effect transistor (MOSFET) . Embodiments of the present invention will be further described in detail below in conjunction with the accompanying drawings, as figure 1 Shown is a sche...
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