Method for preparing silicon-based surface plasma waveguide having stepped structure
A surface plasmon, stepped structure technology, applied in the directions of light guide, optics, instrument, etc., can solve the problems of increased loss, limited efficiency and rate of third-order nonlinear effect, low speed of two-photon absorption, etc.
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[0025] This embodiment includes the following steps:
[0026] The first step is to coat an electron beam photoresist on the SOI wafer, and then form a waveguide pattern on the silicon layer through an electron beam exposure (E-beam lithograph) system and a reactive ion etching (RIE) system;
[0027] The second step is to deposit a highly nonlinear polymer-regioregular poly-3-hexylthiophene (RR-P3HT) on the SOI ridge waveguide;
[0028] The deposition refers to: using the remaining electron beam photoresist after electron beam exposure as a mask to deposit RR-P3HT by molecular beam deposition;
[0029] The difference between the deposited thickness and the height of the SOI ridge waveguide is the step height of silver.
[0030] The third step is to remove the electron beam photoresist and RR-P3HT on it, and deposit RR-P3HT for the second time by molecular beam deposition
[0031] The thickness of the second deposition is 5nm.
[0032] The fourth step is to use the radio freq...
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