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Neodymium-doped A3BGa3Si2O14 series crystal and preparation method and application thereof

A technology of a3bga3si2o14, crystal, applied in the field of neodymium-doped A3BGa3Si2O14 series crystals and their preparation and application, which can solve problems such as difficult to obtain large single crystal with high optical quality, high temperature control requirements, and limited Nd doping concentration

Active Publication Date: 2014-09-03
SHANDONG UNIV
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  • Abstract
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AI Technical Summary

Problems solved by technology

Although LiNbO 3 The effective nonlinear coefficient of the crystal is very large (d eff =5.3pm / V), but the crystal is prone to photodamage due to the photorefractive effect
Although this effect can be weakened by doping MgO in the crystal, it also affects the optical quality of the crystal and limits the Nd 3+ doping concentration
Nd x Y 1-x Al 3 (BO 3 ) 4 The disadvantage of (NYAB) crystals is that it is not easy to obtain bulk single crystals of high optical quality
In addition, NYAB has a strong absorption at 530nm, which is very unfavorable to the self-multiplier output
Nd:ReCaO 4 (BO 3 ) 3 (Re:Y and Gd) crystals have large effective nonlinear coefficients, but the crystals have low symmetry, strong anisotropy of thermal properties, and high requirements for temperature control in practical applications.

Method used

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  • Neodymium-doped A3BGa3Si2O14 series crystal and preparation method and application thereof
  • Neodymium-doped A3BGa3Si2O14 series crystal and preparation method and application thereof
  • Neodymium-doped A3BGa3Si2O14 series crystal and preparation method and application thereof

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Embodiment Construction

[0015] A doped neodymium A 3 B Ga 3 Si 2 o 14 series of crystals, including the chemical formula A 3 B Ga 3 Si 2 o 14 series of crystals, in which the crystal chemical formula Nd:A 3 B Ga 3 Si 2 o 14 Wherein, A is Ca or Sr, and B is Nb or Ta.

[0016] Preferably according to the present invention, the neodymium-doped A 3 B Ga 3 Si 2 o 14 In the series of crystals, the doping concentration of neodymium ions is 0.3-10 at%.

[0017] A kind of above-mentioned neodymium-doped A 3 B Ga 3 Si 2 o 14 The preparation method of series crystal, comprises the steps:

[0018] (1) Carry out stoichiometric proportioning according to prior art, then carry out mixing, burning material, pressing material, burning material step successively then, obtain Nd after sufficient solid state reaction:A 3 B Ga 3 Si 2 o 14 Polycrystalline;

[0019] (2) Nd obtained above: A 3 B Ga 3 Si 2 o 14 The polycrystal is placed in an iridium gold crucible and grown in a high-temperature s...

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Abstract

The invention relates to neodymium-doped A3BGa3Si2O14 series crystal, comprising a series crystal of which the chemical formula is A3BGa3Si2O14, wherein A is Ca or Sr; B is Nb or Ta; according to the record, the neodymium-doped A3BGa3Si2O14 series crystal comprises Nd:Ga3TaGa3Si2O14, Nd:Sr3TaGa3Si2O14, Nd:Sr3NbGa3Si2O14 and Nd:Ca3NbGa3Si2O14. The four kinds of crystals can achieve self-frequency-doubling. The invention also provides a method for preparing the neodymium-doped A3BGa3Si2O14 series crystal. The invention also provides an application of the neodymium-doped A3BGa3Si2O14 series crystal. A commercial semiconductor laser pump (LD) of which the center wavelength is 808nm is adopted, gain medium and non-linear optical property of the neodymium-doped A3BGa3Si2O14 (A=Ca, Sr; B=Nb, Ta) series crystal are utilized, so as to obtain a green self-frequency-doubling laser of which the output wavelength is 533nm. The laser device has the advantages of high conversion efficiency, compact structure, miniaturization, high reliability, long service life and the like.

Description

technical field [0001] The invention relates to a neodymium-doped A 3 B Ga 3 Si 2 o 14 The series of crystals and their preparation method and application belong to the technical field of laser and nonlinear optics. Background technique [0002] All-solid-state green lasers have important application prospects in the fields of laser biomedicine, laser color display, laser high-density data storage, laser spectroscopy, laser printing, laser underwater imaging and communication. Activated ion Nd 3+ corresponding 4 f 3 / 2 → 4 f 11 / 2 The four-level structural transition line (1.06 μm) has strong gain, large emission cross-section and high efficiency. Nd-doped 3+ YAG, YVO 4 The output power of laser crystals such as , YLF and YAP has reached a very high level and the commercialization of 1.06μm solid-state lasers has been realized. At present, the realization of the all-solid-state green laser source of 0.530 μm is mainly obtained by frequency doubling the above 1.06 μ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/22H01S3/16
Inventor 赵显刘彦庆于法鹏陈菲菲侯帅王正平周莹程秀凤
Owner SHANDONG UNIV
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