Polarized tuning ferroelectric film diode memory

A ferroelectric thin film and diode technology, applied in the field of microelectronics, can solve problems such as restricting the development of flash memory, and achieve the effects of improving programming/erasing speed, fast reading and writing speed, and good retention characteristics

Active Publication Date: 2010-10-13
FUDAN UNIV
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  • Polarized tuning ferroelectric film diode memory
  • Polarized tuning ferroelectric film diode memory
  • Polarized tuning ferroelectric film diode memory

Examples

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Embodiment Construction

[0022] The principles and features of the present invention are described in conjunction with the following drawings, and the examples are only used to explain the present invention, and are not used to limit the material scope of the present invention.

[0023] This example tunes a ferroelectric thin film diode memory storage cell such as figure 1 As shown, it includes a substrate and a lower electrode 103 (strontium ruthenate / strontium titanate), bismuth ferrite 102, and an upper electrode (Pt, Au) 101.

[0024] The above device is prepared by the following method:

[0025] 1. With the (100) direction single-crystal strontium titanate as the substrate, grow the bottom electrode of strontium ruthenate (with a thickness of 50nm-150nm) by pulsed laser deposition (PLD).

[0026] 2. On the above substrate, deposit bismuth ferrite (with a thickness of 200nm-500nm) by PLD.

[0027] 3. Using DC magnetron sputtering to grow a platinum metal upper electrode (thickness 100nm-150nm). ...

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Abstract

The invention belongs to the technical field of information storage, and particularly relates to a polarized tuning ferroelectric film diode memory, which comprises a substrate, a film bottom electrode prepared through electron beam evaporation or magnetron sputtering, a bismuth ferrite film prepared through pulse laser deposition or magnetron sputtering and a top electrode in sequence. Due to the polar modulation diode current density of 5.4A/cm2, the novel bismuth ferrite film made of semiconductor material in the invention is very suitable for high-density information storage and application, and the stored information simultaneously has the advantages of non-volatile performance, fatigue resistance, radiation resistance and non-destructive reading function of the variable resistance memory. Therefore, the invention improves the programming/erasing speed (the picosecond level) of the non-volatile memory cell, and has broad development space and market potential.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and in particular relates to a ferroelectric thin film diode memory. Background technique [0002] Non-volatile memory is a semiconductor memory that saves information when power is turned off. Its biggest advantage is that the stored data can still be kept for a long time when there is no power supply. At present, flash memory (Flash) is still the mainstream of the non-volatile memory in the market. With the rapid development of digital high-tech, higher requirements are placed on the performance of memory, such as high speed, high density, low power consumption, long life and smaller size. Especially when the feature size of the device is reduced to below 65nm, the contradiction between the erasing speed and reliability of the traditional polysilicon floating gate structure Flash memory device and the leakage of the gate dielectric, etc., the erasing times are generally 10 5 The eras...

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Application Information

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IPC IPC(8): H01L27/115H01L21/8247G11C11/22
Inventor 江安全刘骁兵
Owner FUDAN UNIV
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