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Method for preparing high performance mercury cadmium telluride p-n junction by ion injection

A technology of ion implantation and mercury cadmium telluride, applied in the direction of climate sustainability, final product manufacturing, sustainable manufacturing/processing, etc., can solve the problems of time and energy, high test cost, poor comparability, etc., to save time and Efforts, low test costs, and improved comparability

Inactive Publication Date: 2009-05-06
HUAIYIN TEACHERS COLLEGE +1
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  • Description
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Problems solved by technology

However, this method has obvious disadvantages
The patented technology "Optimization Method for Ion Implantation Dose of HgCdTe Materials for Photovoltaic Infrared Detectors" (ZL 200510122955.5) overcomes the high cost of testing, the need to consume a lot of time and energy, and the fact that different batches of preparations exist in the above conventional technical means. The material difference of different parameters affects the unit test results of different parameter series, resulting in defects such as poor comparability, and also significantly improves the test efficiency by dozens of times

Method used

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  • Method for preparing high performance mercury cadmium telluride p-n junction by ion injection
  • Method for preparing high performance mercury cadmium telluride p-n junction by ion injection
  • Method for preparing high performance mercury cadmium telluride p-n junction by ion injection

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Embodiment Construction

[0022] It is now described in conjunction with the accompanying drawings:

[0023] figure 1 It is the base material under test (MCT) sample, the sample is square, and the surface layer of the base material of the sample is peeled off to expose a fresh mercury cadmium telluride layer 1 . In order to minimize the impact on the surface of the material during the process, a layer of ZnS barrier layer 2 must be uniformly evaporated on the surface of the fresh base material, with a thickness of And the sample is divided into square matrix units 3 whose length and width are IV-VIII.

[0024] Such as figure 2 Shown are multiple mask plates fabricated with slits of different widths and narrows. Wherein: Figure A shows that the hollow area 5 carved into the mask plate 4 is a horizontal rectangle, and is located at the lower part of the mask plate, corresponding to figure 1 The V-VIII row square matrix unit 3 in the figure; the figure B shows that the hollow area 5 carved into the ...

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Abstract

The invention relates to a method for preparing a high-performance mercury cadmium telluride p-n junction through ion injection. The method comprises the following steps: adopting an identical mercury cadmium telluride film as a substrate; manufacturing a plurality of mask plates; evaporating a ZnS film as blocking layers for ion injection; photo etching a corresponding ion injection region on the blocking layers to inject; and then finishing the junction process of the p-n junction. The blocking layers for the ion injection are ZnS film blocking layers with different thickness obtained through a plurality of superposition and evaporation; the ion injection dosage is the dosage of an identical ion and identical injection energy value after being optimized. The invention obtains a serial testing unit for superposing and evaporating the blocking layers with different thickness obtained on identical backing material; the process improvement of the ion injection is conducted to a photo etching entrance and exit area according to the ion injection dosage after being optimized at a time, so as to prepare the high-performance mercury cadmium telluride p-n junction and provide more convenient and quicker experimental investigation on optimizing process parameters for a solar infrared detector. The invention has the advantages of low testing cost, and time and energy conservation; and the method can be popularized and applied to the optimization study on the thickness of the ion injection blocking layer in other backing material system.

Description

technical field [0001] The invention relates to an optimization research technology for the preparation process parameters of an infrared detector, in particular to a method for preparing a high-performance mercury cadmium telluride p-n junction by ion implantation of a photovoltaic infrared detector. technical background [0002] The key to optimizing the performance of photovoltaic infrared detectors based on mercury cadmium telluride (MCT) thin film materials is to prepare high-performance mercury cadmium telluride p-n junctions. Due to the high absorption coefficient and high quantum efficiency of the mercury cadmium telluride thin film, in the ternary alloy system of MCT, different band gaps can be obtained by adjusting the cadmium component value. An important material for the preparation of infrared detectors. The performance of photovoltaic infrared detectors depends on the zero bias resistance of the device unit (R 0 ) value and the product of the p-n junction are...

Claims

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Application Information

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IPC IPC(8): H01L31/18H01L21/04H01L21/426
CPCY02P70/50
Inventor 陈贵宾陆卫王少伟李志锋陈效双
Owner HUAIYIN TEACHERS COLLEGE
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