Method for preparing tungsten carbide-zirconium oxide-aluminum oxide composite knife material
A composite cutting tool and zirconia technology, applied in the field of material science, can solve the problems of low hardness and achieve the effects of high flexural strength, uniform composition and particle size distribution, and high temperature stability of fracture toughness
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Examples
Embodiment 1
[0015] Micron WC (0.4μm)+micron ZrO 2 (0.5μm)+nano Al 2 o 3 (80nm), the content of each component in the composite material is: 10wt% ZrO 2 , wt2% Al 2 o 3 , 0.4wt% VC, 0.3wt% TaC, and the rest is WC. Using sodium polyphosphate as a dispersant and deionized water as a dispersion medium, prepare an aqueous solution containing 0.25 wt% sodium polyphosphate; adding alum carbide powder with a grain size of 2 microns to the solution to form a 0.2 wt% solution Put the suspension on an ultrasonic dispersing mixer for 5 to 10 minutes, and remove the solution from the ultrasonic dispersing machine; in the same way, put tantalum carbide with a particle size of 1 micron into the solution, and prepare a solution containing tantalum carbide with a mass fraction of 0.15wt% suspension, disperse on an ultrasonic mixer for 5-10 minutes, remove the suspension from the ultrasonic machine; adjust the pH value of the suspension to 8.9-9.5 to make the suspension alkaline, and mix the nano-alum...
Embodiment 2
[0018] Micron WC (0.4μm)+micron ZrO 2 (0.5μm)+nano Al 2 o 3 (80nm), the content of each component in the composite material is: 12wt% ZrO 2 , 1 wt% Al 2 o 3 , 0.4wt% VC, 0.3wt% TaC, and the rest is WC. Dispersion process and parameters are the same as in Example 1. Micron WC and ZrO 2 and nano Al 2 o 3It is mixed with the prepared VC and TaC suspension, mixed by planetary ball mill in a mixing tank for 60-72 hours, then vacuum-dried and sieved to obtain a well-dispersed composite powder. It adopts staged heating, uniform pressure and hot pressing sintering process, and high-purity nitrogen protection. When the temperature is between room temperature and 1500°C, the heating rate is 75-80°C / min, the pressure is evenly increased to 30MPa, and the temperature is maintained for 10 minutes; when the temperature is between 1500-1650°C, the heating rate is 80-100°C / min, and the pressure is constant at 30MPa; The stage temperature is 1650°C, the pressure is 30MPa, and the tem...
Embodiment 3
[0021] Micron WC (0.8μm)+micron ZrO 2 (0.5μm)+nano Al 2 o 3 (80nm), the content of each component in the composite material is: 10wt% ZrO 2 , 5 wt% Al 2 o 3 , 0.4wt% VC, 0.3wt% TaC, and the rest is WC. Dispersion process and parameters are the same as in Example 1. Micron WC and ZrO 2 and nano Al 2 o 3 It is mixed with the prepared VC and TaC suspension, mixed by planetary ball mill in a mixing tank for 60-72 hours, then vacuum-dried and sieved to obtain a well-dispersed composite powder. It adopts staged heating, uniform pressure and hot pressing sintering process, and high-purity nitrogen protection. When the temperature is from room temperature to 1600°C, the heating rate is 75-80°C / min, the pressure is evenly increased to 30MPa, and the temperature is maintained for 10 minutes; when the temperature is 1650-1700°C, the temperature is increased at a rate of 80-100°C / min, and the pressure is constant at 30MPa; The stage temperature is 1700°C, the pressure is 30MPa, ...
PUM
Property | Measurement | Unit |
---|---|---|
particle size | aaaaa | aaaaa |
hardness | aaaaa | aaaaa |
flexural strength | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com