Method for forming carbonaceous material protrusion and carbonaceous material protrusion

A carbon-based and resist technology, which is applied to the formation of carbon-based material protrusions and the field of carbon-based material protrusions, can solve unknown, undiscovered and other problems, and achieve small height deviation, increased aspect ratio, and good height uniformity. Effect

Inactive Publication Date: 2007-03-21
SUMITOMO ELECTRIC IND LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

There is no precedent for a mask with a pattern of a diameter of 300nm or less, and a mask with a pattern of a diameter of 50nm or less is completely unknown
In addition, no method has been found for forming four or more protrusions in a 1 μm square so that the height of the protrusions is uniform within 10%.

Method used

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  • Method for forming carbonaceous material protrusion and carbonaceous material protrusion
  • Method for forming carbonaceous material protrusion and carbonaceous material protrusion
  • Method for forming carbonaceous material protrusion and carbonaceous material protrusion

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0078] High-pressure synthetic single crystal diamond substrates (100) and CVD polycrystalline diamond wafer substrates planarized to a few nanometers or less by grinding were prepared, resist coating for electron beam lithography was performed, and electron beam exposure was performed to form inverted tapered holes (Refer to part (a) of FIG. 1). A metal film made of any one of Au, Mo, Pt, and Al is vapor-deposited thereon, and then the resist is removed to lift off the metal film (see part (c) of FIG. 1 ). When the diamond is etched using this as a mask, a diamond with a very sharp apex angle can be formed as shown in parts (a) and (b) of FIG. 4 . Part (a) of FIG. 4 shows a shape formed by a truncated cone mask, or a protrusion of a shape formed by stopping etching before the mask material disappears by using a cone mask. Part (b) of FIG. 4 shows the sharp-shaped protrusion etched to the end of the cone mask. According to this experiment, very fine sharp protrusions can be ...

Embodiment 2

[0082]A high-pressure synthetic single crystal diamond substrate (100), a CVD polycrystalline diamond wafer substrate, and a SiC substrate planarized to a few nm or less by grinding are prepared. Samples in which ion implantation of inert gas and nitrogen gas were respectively performed on these substrates were produced. In addition, some of these samples were subjected to high-temperature annealing (1500° C., 1800° C.) in vacuum, and the rest of these samples, which were not subjected to ion implantation, were treated at high temperature. A conductive black layer considered to be graphite was formed on the surface of any sample. Protrusion shape masks were formed on these samples by the same method as in Example 1. When the carbon-based material is etched using this as a mask, protrusions of the carbon-based material with very sharp apex angles appear as shown in parts (a) and (b) of FIG. 4 . Since the carbon-based material on the surface was already removed by etching, a c...

Embodiment 3

[0084] High-pressure synthetic single crystal diamond substrates (100) and CVD polycrystalline diamond wafer substrates planarized to a few nanometers or less by grinding were prepared, resist coating for electron beam lithography was performed, and electron beam exposure was performed to form inverted tapered holes (Refer to (a) of FIG. 1). SiO 2 Evaporate SiO as raw material by EB evaporation method x film, followed by removal of the resist, the SiO x Membrane lift-off (see part (c) of FIG. 1 ). Although SiO x The composition of the film is towards SiO x When a trace amount of oxygen is introduced into the film, it is close to SiO 2 , however, when processed in an inert gas or in a high vacuum, the oxygen composition of the film is very small. The composition is represented in FIG. 7 . When the diamond is etched using this mask, it produces diamond pillars with very sharp tips. It was confirmed that diamond protrusions were generated even when a metal mask was not us...

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Abstract

The invention provides a method for forming a protrusion structure of a carbon-based material. The method for forming the protrusion structure of the carbon-based material comprises: coating a resist (11) on the diamond substrate (10); opening holes ( 12), the process of making the wall (12b) of the hole (12) form an inverted taper from the opening (12a) toward the back side; start to vapor-deposit the mask material from the opening (12a) side, (12) The process of forming a mask evaporation (14) inside; the process of lifting the mask material (13) evaporated on the resist (11) together with the resist (11); A step of etching the diamond substrate (10) with the mold vapor deposition (14) used as a mask to form a carbon-based material protrusion.

Description

technical field [0001] The invention relates to a method for forming protrusions of carbon-based materials and a protrusion structure of carbon-based materials. Background technique [0002] So far, when forming the protruding structure of diamond, following method is arranged, promptly, form diamond in the concave mold of the anisotropic etching of Si, Si is removed, form the pyramid of polycrystalline diamond (for example, refer to following non-patent Literature 1). However, when this method is used in an electron emission element, since it is necessary to reduce the particle diameter at the head end, the protrusions become polycrystalline, and since there are grain boundaries inside the protrusions, the transport of electrons is not smooth, and it may not be effective from the NEA surface. The problem of electron emission. In addition, when it is used in the proximity field light probe, if it is polycrystalline, there is also a problem that light propagation is not smo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J9/02B82B3/00G01N13/16H01J1/304H01L21/28B81C1/00
CPCH01J9/025H01J2329/0447B81C1/00111H01J2329/0415Y10T428/26H01J1/304H01L21/28
Inventor 西林良树宫崎富仁服部哲也今井贵浩
Owner SUMITOMO ELECTRIC IND LTD
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