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Method for preparing buffer layer film of cadmium-free copper-indium-gallium-selenium thin-film solar cell

A technology for solar cells and copper indium gallium selenide, which is applied to circuits, electrical components, and final product manufacturing, etc., can solve the problems of low photoelectric conversion efficiency of cadmium-free CIGS thin-film solar cells, decreased light absorption coefficient of thin-film solar cells, and difficulty in recycling cadmium emissions. and other problems, to achieve the effect of improving photoelectric conversion efficiency, overcoming the decline in light absorption, and preventing dark current.

Inactive Publication Date: 2004-11-17
NANKAI UNIV
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  • Summary
  • Abstract
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  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The disadvantages of the CdS buffer layer film at the heterojunction interface of CIGS thin-film solar cells are: ①The band gap of CdS is small, and the light absorption coefficient of CIGS / CdS thin-film solar cells in the short-wave region decreases; ②With the development of CIGS / CdS thin-film solar cell technology The acceleration of development and industrialization process, the discharge of cadmium-containing wastewater after treatment in the battery production process and the difficulty in recycling cadmium in scrap batteries will all cause environmental pollution, which has become a serious concern for people.
The shortcoming of above-mentioned method is: can not carry out the coating of metal zinc thin film and the post-selenization or / and vulcanization operation of metal zinc thin film continuously in the selenization production line after the copper indium gallium metal prefabricated layer of CIGS thin-film solar cell, thus manufactured The photoelectric conversion efficiency of the obtained cadmium-free CIGS thin-film solar cells is also relatively low.

Method used

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Embodiment 1

[0017]After the glass substrate of the battery is cleaned and placed in a vacuum chamber for glow treatment, the Mo substrate or back electrode is deposited by sputtering, and then transferred to another chamber for magnetron sputtering or vacuum heating to evaporate copper indium gallium metal, copper indium gallium Step-by-step deposition on the glass Mo substrate to prepare the copper indium gallium metal prefabricated layer of the CIGS thin film battery, and then transferred to the vacuum heat treatment chamber of the solid source light selenization device for solid source light selenization treatment, the copper indium gallium metal prefabricated layer layer into the optical absorption layer of the CIGS thin film battery, or after the glass substrate of the battery is cleaned and placed in a vacuum chamber for glow treatment, the Mo substrate or the back electrode is deposited by sputtering, and the optical absorption layer of the CIGS thin film battery is prepared by co-ev...

Embodiment 2

[0019] Except that the selenium in the embodiment 1 is replaced by sulfur, the others are the same as the embodiment 1, and the cadmium-free n-ZnS buffer layer material of the CIGS thin film solar cell is prepared.

Embodiment 3

[0021] In the solid-state source photo-selenization device of embodiment 1, add the airtight reaction chamber of the light radiation heating solid-state selenium source that is independently installed in addition, when the linkage vacuum degree of mechanical pump and molecular pump or vacuum diffusion pump reaches 10 -2 ~10 -5 Pa, the selenium solid source in the reaction chamber is irradiated and heated by a halogen lamp or a high-pressure mercury lamp, and when the temperature of the reaction chamber reaches 210-550°C, H 2 or Ar+H 2 , selenium vapor reacts with hydrogen molecules under the condition of light radiation heating to form hydrogen selenide, H 2 The mixed gas of Se and vaporized Se is transported near the surface of the metal zinc film coated on the battery substrate. Under the irradiation of a halogen lamp or a high-pressure mercury lamp, the light radiation promotes the reaction of the metal zinc film to H 2 The adsorption and permeation of Se, the heating of ...

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Abstract

The invention refers to a manufacturing method for cadmium-less copper-indium-gallium-selenium film solar battery buffer film. The zinc film is coated on the surface of the copper-indium-gallium-selenium optical absorbing layer, then, the surface of the battery coated with metal zinc film is irradiated by light and heated, the back surface of the substrate is heated with contacting heat source or irradiation mode, the solid selenium source and / or the sulphur source are heated with contacting heat source and irradiation mode, the temperature is controlled at 160-280oC, the light irradiation is used as catalyst to the synthesis reaction between the selenium or the sulphur steam and the zinc film, the temperature in the process of the selendie or sulfide of the zinc film is controlled at 180-420 oC, the time is 2-10 minutes, the zinc film is converted into n-type ZnSe or ZnS semiconductor film material, cadmium-less copper-indium-gallium-selenium film solar battery buffer film can be produced.

Description

technical field [0001] The technical solution claimed in the present invention relates to a special preparation method for semiconductor materials used in solar cells, specifically a preparation method for a buffer layer film of a cadmium-free copper indium gallium selenium thin film solar cell. Background technique [0002] Copper Indium Gallium Selenide (Cu(In,Ga)Se 2 Abbreviated as: CIGS) thin-film solar cell is a photovoltaic device formed by depositing multi-layer thin films on ordinary soda-lime glass or polyimide film, aluminum sheet, stainless steel sheet, titanium sheet or molybdenum foil substrate. The structure is generally: glass substrate / metal molybdenum (Mo) back electrode / CIGS light absorption layer / CIGS buffer layer---CdS, ZnS, ZnSe, In(OH) 3 , Zn(O, S, OH), etc. / high resistance intrinsic i-ZnO / conductive window layer---doped ZnO(ZnO:Al, Zn:Ga, Zn:B), SnO 2 , ITO (indium tin oxide), etc. / metal grid electrode / anti-reflection film. It was first discovered t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 孙云李长健刘唯一何清李凤岩周志强敖建平孙国忠
Owner NANKAI UNIV
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