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Pattern formation material, water-soluble material and pattern formation method

A technology of water-soluble materials and water-soluble films, which can be used in photosensitive materials used in optomechanical equipment, photoplate-making process of patterned surface, optics, etc., can solve the problems of resist pattern deterioration and productivity reduction, and avoid Effects of reduction in strength, reduction in productivity, and prevention of deterioration

Inactive Publication Date: 2004-03-31
PANASONIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

That is, once the outgasses adhere to the reflective mirror or the mask of the exposure device, the intensity of the exposure light irradiated on the resist film decreases, so there is a problem that the pattern of the resist layer is deteriorated or the productivity is lowered.

Method used

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  • Pattern formation material, water-soluble material and pattern formation method
  • Pattern formation material, water-soluble material and pattern formation method
  • Pattern formation material, water-soluble material and pattern formation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0057] Below, refer to figure 1 (a) to (d) The pattern forming method according to Embodiment 1 of the present invention will be described.

[0058] First, a chemically amplified resist material having the following composition was prepared.

[0059] Poly[(tert-butyl methacrylate)-(mevalonolactone methacrylate)] (tert-butyl methacrylate: mevalonolactone methacrylate=50mol%: 50mol%) (polymer )

[0060] 2g

[0061] Triphenylsulfonium trifluoride (triphenylsulphoniumtriflate) (acid generator) 0.08g

[0062] Granular egret G2c [manufactured by Takeda Pharmaceutical Co., Ltd.] (crushed charcoal) 0.16g

[0063] Propylene glycol monomethyl ether acetate (solvent) 20g

[0064] Then if figure 1 As shown in (a), the chemically amplified resist material is spin-coated on the semiconductor substrate 10 to form a resist film 11 with a thickness of 0.2 μm.

[0065] Then, if figure 1 As shown in (b), the resist film 11 is irra...

Embodiment approach 2

[0072] Below, refer to figure 2 (a) to (e) The pattern forming method according to Embodiment 2 of the present invention will be described.

[0073] First, a chemically amplified resist material having the following composition was prepared.

[0074] Poly[(tert-butyl methacrylate)-(mevalonolactone methacrylate)] (tert-butyl methacrylate: mevalonolactone methacrylate=50mol%: 50mol%) (polymer )

[0075] 2g

[0076] Triphenylsulfonium trifluoride (triphenylsulphoniumtriflate) (acid generator) 0.08g

[0077] Propylene glycol monomethyl ether acetate (solvent) 20g

[0078] Then if figure 2 As shown in (a), the chemically amplified resist material is spin-coated on the semiconductor substrate 20 to form a resist film 21 with a thickness of 0.2 μm.

[0079] Then, if figure 2 As shown in (b), a water-soluble material having the following composition was spin-coated on the resist film 21 to form a water-soluble film 22 ha...

Embodiment approach 3

[0089] Below, refer to image 3 (a)~(c) and Figure 4 (a) to (c) The pattern forming method according to Embodiment 3 of the present invention will be described.

[0090] First, a chemically amplified resist material having the following composition was prepared.

[0091] Poly[(tert-butyl methacrylate)-(mevalonolactone methacrylate)] (tert-butyl methacrylate: mevalonolactone methacrylate=50mol%: 50mol%) (polymer )

[0092] 2g

[0093]Triphenylsulfonium trifluoride (triphenylsulphoniumtriflate) (acid generator) 0.08g

[0094] Propylene glycol monomethyl ether acetate (solvent) 20g

[0095] Then as image 3 As shown in (a), the chemically amplified resist material is spin-coated on the semiconductor substrate 30 to form a resist film 31 with a thickness of 0.2 μm.

[0096] Then, if image 3 As shown in (b), a water-soluble material having the following composition was spin-coated on the resist film 31 to form a water...

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Abstract

The pattern formation material of this invention is composed of a chemically amplified resist material. The chemically amplified resist material includes a polymer whose solubility in a developer is changed owing to a function of an acid; an acid generator that generates an acid through irradiation with an energy beam; and a compound that absorbs outgassing induced from the polymer or the acid generator.

Description

technical field [0001] The present invention relates to a pattern forming material, water-soluble material and pattern forming method used in the manufacturing process of semiconductor devices. Background technique [0002] Along with the large integration of semiconductor integrated circuits and the miniaturization of semiconductor devices, it is expected to accelerate the development of lithography technology. Currently, pattern formation is performed by photolithography using a mercury lamp, a KrF excimer laser, an ArF excimer laser, or the like as light for exposure. [0003] However, in order to form a fine pattern with a pattern width of 0.1 μm or less, especially 70 nm or less, F 2 In addition to the application of vacuum ultraviolet rays such as laser light (wavelength: 157nm band) or extreme ultraviolet rays (wavelength: 1-30nm band), the application of emission exposure by electron beam (EB) is also considered. [0004] In addition, such as T.Watanabe et al., "Ph...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/004G03F7/039G03F7/11G03F7/20H01L21/027
CPCG03F7/0047G03F7/0392
Inventor 远藤政孝笹子胜
Owner PANASONIC CORP
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