Method for forming high-frequency IC wire and inductive coil pack

Abstract

This invention discloses a method for forming high frequency IC wire and inductance coil components which is to form patternized photoresistance on a base surface after finishing processing all components on it then to form a copper thin film on the base and photoresistance utilizing a physical deposition method. Since the copper films are not connected, good copper wire structure is formed on the component zone of the base surface after photoresistance floatation to guarantee complete on-line structure among semicaonductor components.

Description

【Technical field】 [0001] The invention relates to a manufacturing method of a semiconductor component, in particular to a method of using copper material to form connecting wires between components. 【Background technique】 [0002] In the semiconductor manufacturing process, it is necessary to rely on metal wires to connect each transistor (interconnection) to play the function of the semiconductor device. Since the semiconductor components, chip manufacturers have used aluminum as the main wire material because of its small resistance value and circuit resistance. The deposition and etching of patterns are very easy, but when the semiconductor manufacturing process goes deep into sub-micron, the density of components becomes higher and higher, and the wires become relatively thinner. On the other hand, the requirements of low power consumption and high-speed IC Aluminum conductors cannot provide a reliable current carrying function. [0003] How to reduce the resistance of ...

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Problems solved by technology

[0002] In the semiconductor manufacturing process, it is necessary to rely on metal wires to connect each transistor (interconnection) to play the function of the semiconductor device. Since the semiconductor components, chip manufacturers have used aluminum as the main wire material because of its small resistance value and circuit resistance. The deposition and etching of patterns are very easy, but when the semiconductor manufacturing process goes deep into sub-micron, the density of components becomes higher and higher, and the wires become relatively thinner. On the other hand, the requirements of low power consumption and high-speed IC Aluminum conductors cannot provide reliable current carrying function

[0003] How to reduce the resistance of the connection is very important, because the components with small resistance will consume less power, the RC delay time will be shorter, and the speed of IC components will be faster, so there are copper wires, due to the resistance of copper The value is smaller than that of aluminum; although copper has a lower resistance value than aluminum, the diffusion rate of copper in silicon is very high, resulting in reduced reliability of components due to copper contamination of the silicon substrate, and copper wires cannot be etched to form wires Therefore, after semiconductors entered the deep sub-micron field, some people developed a method of using copper wire inlay (damascenecopper interconnection), using low dielectric materials as dielectric layers, and then using chemical mechanical polishing (chemical mechanical polishing) , CMP) to remove excess copper metal layer on the surface of the dielectric layer

[0004] but in the form of figure 1 When there is a high-frequency IC chip structure with a built-in inductance component, when forming the copper metal wire 30 and the inductance component 32, during the chemical mechanical polishing process of copper, pollutants such as polishing liquid or grinding particles in the polishing pad often adhere to the crystal. The phenomenon of round surface is very easy to produce process defects on the surface of copper metal, which further limits the application of copper metal in semiconductor process

[0005] Therefore, it is known that in semiconductor manufacturing methods, in the face of higher and higher integration of components and smaller and smaller process line widths, the use of copper wire structures is the future trend, but the pollution formed by copper on the silicon substrate Not only does it affect the stability of components, it is difficult to make smaller semiconductor components, and it also reduces the yield and electrical quality of components

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