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Platinum film with oversized crystal grains and preparation method thereof

A thin-film preparation and thin-film technology, applied in the field of ultra-large grain platinum thin film and its preparation, can solve the problems of low grain boundary density, reduce material cost, increase the thickness of platinum thin film, etc., achieve less structural defects, simple heat treatment method, thin film The effect of layer densification

Pending Publication Date: 2022-07-15
江苏精瓷智能传感技术研究院有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In order to obtain larger grain size, that is, lower grain boundary density, the thickness of the film can be increased, however, platinum is a noble metal, and increasing the thickness of the platinum film is not good for reducing the material cost

Method used

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  • Platinum film with oversized crystal grains and preparation method thereof
  • Platinum film with oversized crystal grains and preparation method thereof
  • Platinum film with oversized crystal grains and preparation method thereof

Examples

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preparation example Construction

[0048] A method for preparing a platinum thin film, comprising the following steps:

[0049] S1, depositing one or more layers of oxygen-containing platinum films on an alumina substrate;

[0050] S2, heat-treating the oxygen-containing platinum thin film.

[0051] Another platinum thin film preparation method, comprising the following steps:

[0052] S1, deposit a layer of oxygen-containing platinum film on the alumina substrate;

[0053] S2, heat treating the above-mentioned oxygen-containing platinum film;

[0054] S3, depositing one or more layers of oxygen-containing platinum films on the oxygen-containing platinum films after the above heat treatment;

[0055] S4, heat-treating the above-mentioned oxygen-containing platinum film;

[0056] The steps S3 and S4 can be repeated.

[0057] A preferred example, the heat treatment temperature is 0.52T m ~ 0.72T m , T m is the melting point of metal platinum, and the heat treatment atmosphere is any of air, argon, and nitr...

Embodiment 1

[0060] The present embodiment provides a method for preparing a platinum thin film with super large grains, comprising the following steps:

[0061] S1, providing a ceramic substrate 101, and depositing a layer of oxygen-containing platinum film 102 on the ceramic substrate;

[0062] S2, heat-treating the oxygen-containing platinum film 102 to obtain a platinum film 103 with super-large crystal grains.

[0063] In step S1, the oxygen-containing platinum thin film 102 is prepared by a magnetron sputtering method, and the sputtering carrier gas is a mixed gas of argon and oxygen, wherein the volume fraction of oxygen is 0%-10%.

[0064] In step S2, the heat treatment atmosphere is air, and the heat treatment temperature is 800°C to 1100°C.

Embodiment 2

[0066] The present embodiment provides a method for preparing a platinum thin film with super large grains: comprising the following steps:

[0067] S1, providing a ceramic substrate 201, and depositing a layer of oxygen-containing platinum film 202 on the ceramic substrate;

[0068] S2, performing heat treatment on the oxygen-containing platinum film 202 to obtain a film 203 after the heat treatment of 202;

[0069] S3, depositing a layer of oxygen-containing platinum film 204 on the heat-treated film 203;

[0070] S4, heat treatment on the above-mentioned thin films 203 and 204 to obtain a platinum thin film 205 with super-large crystal grains.

[0071] In step S1, the oxygen-containing platinum film 202 is prepared by a magnetron sputtering method, and the sputtering carrier gas is a mixed gas of argon and oxygen, wherein the volume fraction of oxygen is 30%-50%.

[0072] In step S2, the heat treatment temperature is 900°C to 1100°C, and the heat treatment atmosphere is a...

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Abstract

The invention relates to the technical field of thin films, in particular to a platinum thin film with ultra-large crystal grains and a preparation method of the platinum thin film. A conventional magnetron sputtering method is used for preparing the platinum thin film, mixed gas of argon and oxygen is used as sputtering carrier gas, the oxygen content in the deposited platinum thin film is adjusted by adjusting the oxygen content in the mixed gas of argon and oxygen during sputtering, and the oxygen content in the deposited platinum thin film is adjusted in cooperation with the subsequent heat treatment temperature and heat treatment atmosphere of the thin film. The surface energy and strain energy in the growth process of thin film crystal grains are mainly adjusted, so that the crystal grains with specific orientation have thermodynamic or dynamic growth advantages in a certain stage of heat treatment, surrounding small crystal grains are continuously consumed and grow abnormally until the abnormally grown crystal grains are in contact with one another, and the growth efficiency of the thin film is improved. And finally, the platinum film with large grain size and uniform grain distribution is obtained. The preparation method disclosed by the invention is simple, and the prepared platinum film has few structural defects and excellent electrical properties.

Description

technical field [0001] The invention relates to a thin film, in particular to a platinum thin film with super large crystal grains and a preparation method thereof. Background technique [0002] Whether for bulk materials or thin-film materials, the grain size has an important impact on the electrical, magnetic, mechanical, optical and other properties of the material. Single crystal thin films have important applications in the semiconductor industry, integrated circuits and other fields. Single crystal thin films usually require a single crystal substrate and are prepared by epitaxial technology, but usually the epitaxy equipment is expensive, and the epitaxy method has limited choice of substrate materials. Usually, the difference between the lattice size of the film and the substrate is less than 15%. In addition, the single crystal substrate is usually It is made by smelting-pulling-cutting-polishing, and the manufacturing cost is high. [0003] In some applications, ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/18C23C14/35C23C14/58
CPCC23C14/18C23C14/35C23C14/5806
Inventor 蒲健陈茂冯江涛池波
Owner 江苏精瓷智能传感技术研究院有限公司
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