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High-temperature transparent flexible HfO2 anisotropic magnetic film and preparation method thereof

An anisotropic and magnetic thin film technology, applied in the field of functional materials, can solve the problems of limiting the practical application range of wearable magnetic sensor components, limiting the application range of HfO2 thin film materials, and the difficulty in obtaining large areas of natural single crystal mica. Wide range of bending radius of curvature, easy processing, enhanced magnetic effect

Inactive Publication Date: 2022-03-01
SHAANXI UNIV OF SCI & TECH
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

[0003] Currently, for the preparation of magnetic HfO 2 There are many methods for thin films, such as magnetron sputtering (rf magnetronsputtering), pulsed laser deposition (PLD), metal organic deposition (MOD), etc., which are basically physical preparation methods, and the obtained hard films are related to HfO. 2 Magnetic research focuses on how to increase the magnetization of hard thin film materials, while HfO in a flexible and transparent state 2 However, the research on magnetic thin films is rarely reported, which greatly limits its practical application range in flexible and wearable magnetic sensor components.
In addition, although there is a sol-gel method to prepare HfO on natural single crystal mica sheet 2 However, the following problems still exist: (1) The hafnium oxide in the report grows on the natural single crystal mica sheet prepared by magnetron sputtering on TiN or SRO bottom electrode, which is a combination of physical and chemical processes , not a purely chemical preparation method; in addition, according to the film growth theory, TiN or SRO not only acts as the bottom electrode, but also acts as a buffer layer, and the structure of the upper film material will be affected by the lower material; (2) the report used Natural single crystal mica has the problems of being difficult to obtain a large area, high surface roughness, and a small radius of curvature for mechanical bending; (3) HfO in the report 2 The main research is on its ferroelectric properties, and there is no research on magnetism; the magnetic properties and ferroelectric properties of materials are two completely different physical properties, and their related ferroelectric polarization mechanisms and magnetization mechanisms are also completely different; (4) the reports related to HfO 2 The transmittance of ferroelectric thin film materials is not involved
The above problems seriously limit the application range of HfO2 thin film materials in flexible transparent electronic and magnetic components

Method used

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  • High-temperature transparent flexible HfO2 anisotropic magnetic film and preparation method thereof

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Effect test

Embodiment 1

[0031] Step 1: Select the F-MICA substrate as a substrate, sequentially placed in a detergent, acetone, and ethanol in a substrate, and then rinse the substrate for a large amount of distilled water each time the ultrasonic wafer is washed with a large amount of distilled water.

[0032] Step 2: Put the clean F-MICA substrate in the ultraviolet light irradition for 40 min, so that the surface of the substrate reaches "atom cleanliness".

[0033] Step 3: CO (NO 3 ) 2 · 6h 2 O (cobalt nitrate), C 20 Hide 28 HFO 8 (Acetylacetonate) is proportional to the raw material, and the molar ratio of cobalt nitrate and acetylacetone is 0.1: 0.9. Cobalt nitrate and acetic acid were stirred for 15 min to mix the solution A, and the acetylacetonate and acetylacetone were mixed at 60 ° C water bath until dissolved to dissolve B. Finally, the solution A and solution B were mixed for 1.5 h, and 12 h was obtained from CO ion-doped HFO. 2 Pretty fluid.

[0034] Step 4: CO ion doped HFO 2 The precursor...

Embodiment 2

[0038] Step 1: Select the F-MICA substrate as a substrate, sequentially placed in a detergent, acetone, and ethanol in a substrate, and then rinse the substrate for a large amount of distilled water each time the ultrasonic wafer is washed with a large amount of distilled water.

[0039] Step 2: Put the clean F-MICA substrate in the ultraviolet light irradition for 40 min, so that the surface of the substrate reaches "atom cleanliness".

[0040] Step 3: CO (NO 3 ) 2 · 6h 2 O (cobalt nitrate), C 20 Hide 28 HFO 8 (Acetylacetonate) is proportional to the raw material, and the molar ratio of cobalt nitrate and acetylacetonate is 0.05: 0.95. Cobalt nitrate and acetic acid were stirred for 15 min to mix the solution A, and the acetylacetonate and acetylacetone were mixed at 60 ° C water bath until dissolved to dissolve B. Finally, the solution A and solution B were mixed for 1.5 h, and 12 h was obtained from CO ion-doped HFO. 2 Pretty fluid.

[0041] Step 4: CO ion doped HFO 2 The precu...

Embodiment 3

[0045] Step 1: Select the F-MICA substrate as a substrate, sequentially placed in a detergent, acetone, and ethanol in a substrate, and then rinse the substrate for a large amount of distilled water each time the ultrasonic wafer is washed with a large amount of distilled water.

[0046] Step 2: Put the clean F-MICA substrate in the ultraviolet light irradition for 40 min, so that the surface of the substrate reaches "atom cleanliness".

[0047] Step 3: CO (NO 3 ) 2 · 6h 2 O (cobalt nitrate), C 20 Hide 28 HFO 8 (Acetylacetonate) is proportional to the raw material, and the molar ratio of cobalt nitrate and acetylacetonate is 0.05: 0.95. Cobalt nitrate and acetic acid were stirred for 15 min to mix the solution A, and the acetylacetonate and acetylacetone were mixed at 60 ° C water bath until dissolved to dissolve B. Finally, two solutions were mixed for 1.5 h, and still 12 h got CO ion-doped HFO. 2 Pretty fluid.

[0048] Step 4: CO ion doped HFO 2 The precursor was prepared by a s...

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Abstract

The invention provides a high-temperature transparent flexible HfO2 anisotropic magnetic film and a preparation method thereof.The preparation method comprises the following steps that 1, cobalt nitrate is dissolved in acetic acid to obtain a solution A, hafnium acetylacetonate is dissolved in acetylacetone to obtain a solution B, and the solution A and the solution B are mixed to obtain a Co ion doped HfO2 precursor solution; and 2, spin-coating the Co ion-doped HfO2 precursor solution on a single crystal fluorophlogopite substrate to prepare a wet film, baking glue and annealing the wet film to obtain a crystalline film on the single crystal fluorophlogopite substrate, and stripping the crystalline film to obtain the high-temperature transparent flexible HfO2 anisotropic magnetic film. According to the method, the HfO2 magnetic thin film in a flexible and transparent state can be prepared.

Description

Technical field [0001] The present invention belongs to the field of functional materials, involving a high temperature and transparent flexible HFO 2 Each anisotropic magnetic film and the preparation method thereof. Background technique [0002] Crystal oxide (HFO) 2 It has excellent chemical stability, high dielectric constant (high k) and wider prohibition width, is a high K insulated oxide. It is considered an alternative SIO 2 As one of the most ideal materials of the high K gate dielectric, it can be applied to a metal-oxide-semiconductor field effect transistor (MOSFETS). In 2004, Venkatesan et al. In the undoped single-halved HFO 2 Room temperature ferromagnetic properties were found in the film. According to traditional magnetic origin theory, HFO 2 Should be non-magnetic materials because HFO 2 HF 4+ And O 2- The ion D and F layers are full or full, and there is no loneliness to exist. This unexpected iron magnetic behavior is defined as "D 0 Iron magnetic (ferromagnet...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/48C04B35/622
CPCC04B35/48C04B35/62218C04B2235/3275C04B2235/6567C04B2235/662C04B2235/9653
Inventor 刘文龙奥迪谈国强
Owner SHAANXI UNIV OF SCI & TECH
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