Processing method of ion-doped gadolinium gallium garnet wafer

A technology of gadolinium gallium garnet and ion doping is applied in the field of precision machining of gadolinium gallium garnet wafers, and can solve the problems of less grinding and polishing processing, difficulty in ensuring flatness and surface quality, micro-deformation and the like

Inactive Publication Date: 2022-02-25
SHANDONG UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] At present, there are few grinding and polishing processes for thinner GGG wafers, and GGG wafers are polished with hard abrasives such as diamonds during grinding and polishing, which is prone to scratches and micro deformations, and it is difficult to ensure their flatness and surface quality. , so it is urgent to study the high-efficiency and low-damage processing methods for GGG wafers

Method used

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  • Processing method of ion-doped gadolinium gallium garnet wafer
  • Processing method of ion-doped gadolinium gallium garnet wafer
  • Processing method of ion-doped gadolinium gallium garnet wafer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] Preparation of additives:

[0041] A1. Mix 0.01mol of pyridine-4-carbaldehyde, 0.025mol of phenol and 1mL of glacial acetic acid evenly, and slowly add 25mL of a mixed solution of concentrated sulfuric acid and glacial acetic acid dropwise while stirring under an ice-water bath at 0°C. The dropping speed is 2 drops After the dropwise addition is complete, continue to react at 0°C and 200r / min for 48h, then pour 50mL of ice water, stir for 50min, filter, take the filter cake and wash and filter repeatedly with 50mL of ice water until the filtrate is neutral. Then vacuum-dry the filter cake to constant weight to obtain phenol derivatives, wherein the mixed solution of concentrated sulfuric acid and glacial acetic acid is formed by mixing concentrated sulfuric acid and glacial acetic acid with a mass fraction of 98% according to a volume ratio of 1:4;

[0042] A2. Add 0.1mol pentaerythritol and 50mL glacial acetic acid into a three-necked flask equipped with a stirrer and ...

Embodiment 2

[0046] Preparation of additives:

[0047] A1. Mix 0.01mol of pyridine-4-carbaldehyde, 0.03mol of phenol and 20mL of glacial acetic acid evenly, and slowly add 35mL of a mixed solution of concentrated sulfuric acid and glacial acetic acid dropwise while stirring under an ice-water bath at 0°C. The dropping rate is 2 drops. After the dropwise addition is complete, continue to react at 0°C and 400r / min for 48h, then pour 50mL of ice water, stir for 50min, filter, take the filter cake and wash and filter repeatedly with 50mL of ice water until the filtrate is neutral. Then vacuum-dry the filter cake at 50°C to constant weight to obtain phenol derivatives, wherein the mixed solution of concentrated sulfuric acid and glacial acetic acid is formed by mixing concentrated sulfuric acid and glacial acetic acid with a mass fraction of 98% in a volume ratio of 1:4;

[0048] A2. Add 0.1mol pentaerythritol and 50mL glacial acetic acid into a three-necked flask equipped with a stirrer and a ...

Embodiment 3

[0052] Preparation of grinding liquid:

[0053] The grinding liquid is obtained by ultrasonic vibration of alumina (particle size: 4 μm) and deionized water for 20 minutes, and the concentration of alumina is 0.05 g / mL.

[0054] Preparation of mechanical polishing fluid:

[0055] The mechanical polishing solution was obtained by ultrasonically oscillating aluminum oxide (with a particle size of 1 μm) and deionized water for 20 minutes, and the concentration of aluminum oxide was 0.08 g / mL.

[0056] Preparation of silica sol polishing solution:

[0057] At room temperature, ultrasonically oscillate the silica sol, additives and deionized water for 15 minutes, then add abrasive cerium oxide and additives, continue ultrasonic oscillation for 30 minutes, and finally adjust the pH of the solution to 8 with citric acid to obtain a silica sol polishing solution , the mass ratio of silica sol, additives, deionized water, and cerium oxide is 10:1.5:95:5.5, and the particle size of ce...

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Abstract

The invention relates to a processing method of an ion-doped gadolinium gallium garnet wafer, and belongs to the technical field of precision processing of gadolinium gallium garnet wafers. The processing method comprises the following steps of: 1, carrying out mechanical grinding at room temperature to obtain a roughly ground GGG wafer; 2, carrying out mechanical polishing to obtain a mechanically polished GGG wafer; and 3, carrying out chemical and mechanical polishing: adopting a silica sol polishing solution as a chemical and mechanical polishing solution to chemically and mechanically polish the mechanically polished GGG wafer at room temperature. The GGG wafer is processed by adopting the process steps of mechanical grinding, mechanical polishing and chemical mechanical polishing, and the obtained GGG wafer has lower surface roughness and high planeness through the combination of the process parameters of the stages. An auxiliary agent is introduced into the silica sol polishing solution, and the auxiliary agent plays a role in adjusting the corrosion speed of the silica sol polishing solution to the surface of the GGG wafer, so that the orange peel phenomenon is avoided.

Description

technical field [0001] The invention belongs to the technical field of precision processing of gadolinium-gallium garnet wafers, and in particular relates to a processing method of ion-doped gadolinium-gallium garnet wafers. Background technique [0002] Gadolinium gallium garnet (GGG) has a cubic crystal structure, excellent thermal conductivity, mechanical strength, and good physical and chemical properties. It is an ideal epitaxial substrate material for laser wafers and is widely used in solid-state lasers. GGG crystals can be doped with other ions by ion doping to optimize their laser or light-emitting functions, such as GGG:Nd, GGG:Yb, GGG:Cr, Nd, GGG:Er, GGG:Ho, etc. In order to increase the laser threshold of the crystal, it is necessary to process the grown and cut GGG crystal blank with high flatness, high surface quality, low damage or even no damage. Mechanical grinding and chemical mechanical polishing can effectively improve the flatness of the wafer. And meth...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B24B37/04B24B49/00B24B49/16C09G1/02
CPCB24B37/044B24B37/042B24B49/006B24B49/16C09G1/02
Inventor 赵显罗毅陈菲菲
Owner SHANDONG UNIV
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