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Diamond grinding fluid and preparation process thereof

A technology of abrasive liquid and diamond, which is applied to polishing compositions containing abrasives, other chemical processes, and gases from chemically reactive gases, etc. It can solve the problems of limited lubrication of abrasive liquid, unfavorable processing efficiency, poor suspension stability, etc., and achieve Uniform dispersion, good grinding and polishing quality, and strong grinding force

Pending Publication Date: 2022-01-04
苏州诺天美新材料技术有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Both the existing water-based grinding fluid and oil-based grinding fluid have the defect of poor suspension stability. When they are placed for a long time, there will be delamination and failure. At the same time, in order to ensure the suspension stability of the abrasive, the lubrication of the grinding fluid is limited, resulting Its removal rate is low, which is not conducive to the improvement of processing efficiency

Method used

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  • Diamond grinding fluid and preparation process thereof
  • Diamond grinding fluid and preparation process thereof
  • Diamond grinding fluid and preparation process thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] In the present embodiment, the diamond grinding liquid includes the following components: 6 parts of abrasive, 2 parts of surfactant, 1.2 parts of suspending agent, 0.5 part of wetting agent, 2 parts of pH regulator, 1 part of viscosity regulator and 68 parts of base oil share;

[0036] Among them, the abrasive material is polycrystalline diamond powder (with a particle size of 2-15 μm), polycrystalline diamond-like powder (with a particle size of 3-10 μm), and single-crystal diamond powder (with a particle size of 1-10 μm) with a mass ratio of 2:1:1. 50 μm) mixture.

[0037] The preparation method of above-mentioned single crystal diamond powder is as follows figure 1 Shown: (1) Using the matrix self-nucleation substrate pretreatment method, the nuclei are uniformly and independently dispersed on the silicon-based substrate; (2) the pretreated silicon-based substrate is Deposition, including two stages of diamond nucleation and diamond particle growth, to obtain diam...

Embodiment 2

[0050] In the present embodiment, the diamond grinding liquid includes the following components: 8 parts of abrasive, 2 parts of surfactant, 0.5 part of suspending agent, 0.1 part of wetting agent, 5 parts of pH regulator, 2 parts of viscosity regulator and 82 parts of base oil share;

[0051] Among them, the abrasive is polycrystalline diamond powder (with a particle size of 2-15 μm), polycrystalline diamond-like powder (with a particle size of 3-10 μm), and single-crystal diamond powder (with a particle size of 1-10 μm) with a mass ratio of 6:0.5:1. 50 μm) mixture.

[0052] The surfactant is a mixture of castor oil polyoxyethylene ether and fatty alcohol polyethylene glycol ester with a mass ratio of 1:1.

[0053] The selection of all the other components is the same as in Example 1.

[0054] The preparation process of above-mentioned diamond grinding liquid is as follows:

[0055] S1. Mix the abrasive material and lauryl polyoxyethylene ether according to the mass ratio ...

Embodiment 3

[0060] In the present embodiment, the diamond grinding liquid comprises the following components: 2 parts of abrasive, 1 part of surfactant, 0.6 part of suspending agent, 0.3 part of wetting agent, 6 parts of pH regulator, 3 parts of viscosity regulator and 60 parts of base oil share;

[0061] Among them, the abrasive is polycrystalline diamond powder (particle size 2-15 μm), polycrystalline diamond powder (particle size 3-10 μm), single crystal diamond powder (particle size 1-15 μm) with a mass ratio of 1:3:6. 50 μm) mixture.

[0062] The surfactant is a mixture of polyoxyethylene sorbitan monooleate and ricinoleic acid butyl sodium sulfate with a mass ratio of 1:1.

[0063] The selection of all the other components is the same as in Example 1.

[0064] The preparation process of above-mentioned diamond grinding liquid is as follows:

[0065] S1. Mix the abrasive and octyl polyoxyethylene ether evenly at a mass ratio of 0.01:1, and stir and mix for 5-10 minutes to obtain a...

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Abstract

The invention discloses a diamond grinding fluid. The diamond grinding fluid comprises the following components in parts by mass: 2-10 parts of a grinding material, 1-3 parts of a surfactant, 0.5-2 parts of a suspending agent, 0.1-1 part of a wetting agent, 0-8 parts of a pH value regulator, 1-10 parts of a viscosity regulator and 60-90 parts of matrix oil, wherein the grinding material is a mixture of polycrystalline diamond micro-powder, polycrystalline-like diamond micro-powder and monocrystal diamond micro-powder; the grinding material is subjected to surface modification treatment by adopting alkylphenol polyoxyethylene ether in advance; and the suspending agent is at least one selected from the group consisting of N-methyl pyrrolidone, modified polyurea, methyl pyrrolidine and castor oil derivatives. The diamond grinding fluid is high in grinding efficiency, uniform in grinding material dispersion, good in suspension stability and free of sedimentation and layering after being placed for a long time.

Description

technical field [0001] The invention relates to the technical field of precision grinding and polishing, in particular to a diamond grinding liquid and a preparation process thereof. Background technique [0002] Gallium nitride (GaN), as the third-generation semiconductor material after silicon (Si) and gallium arsenide (GaAs), its application in devices is regarded as the most important event in semiconductors in the 1990s. Light-emitting diodes and lasers have reached a new level. However, in practical applications, GaN materials are difficult to manufacture, and thin films must be grown on other substrate materials. At present, there are many substrate materials for growing GaN materials, including sapphire, Silicon carbide, silicon, magnesium oxide, etc., and sapphire is the most important substrate material. At present, high-quality GaN materials have been epitaxially grown on sapphire to make GaN-based blue light-emitting diodes and laser diodes. Due to its high har...

Claims

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Application Information

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IPC IPC(8): C09G1/02C09K3/14C30B29/04C30B25/00C09C1/44C09C3/10
CPCC09G1/02C09K3/1454C30B29/04C30B25/00C09C1/44C09C3/10
Inventor 钱霖
Owner 苏州诺天美新材料技术有限公司
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