Preparation method of TOPCon battery
A technology of batteries and silicon wafers, applied in circuits, electrical components, photovoltaic power generation, etc., can solve the problems of reducing process steps, achieve the effects of simplifying process steps, enhancing process controllability, and avoiding the risk of expansion
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preparation example Construction
[0035] The present invention provides a kind of preparation method of TOPCon battery, and its concrete steps comprise:
[0036] 1) Silicon wafer cleaning and texturing;
[0038] 3) Remove the back BSG;
[0039] 4) Alkaline polishing on the back;
[0040] 5) Prepare the tunnel oxide layer by LPCVD on the back side and deposit intrinsic amorphous silicon;
[0041] 6) Chain alkali polishing to remove the front amorphous silicon plating;
[0042] 7) Coating the liquid dopant on the back and drying: the front side of the silicon wafer can be placed flat on the carrier plate with negative pressure adsorption function and heating function, and the silicon wafer can be fixed on the carrier plate by negative pressure adsorption, and then on the The back of the silicon wafer is coated with a liquid dopant containing Group V elements (Group V elements are selected from one or more of N, P, As, Sb, and Bi), and then the dopant is dried by heating the carri...
Embodiment example
[0047] The specific implementation case of the present invention on the n-type TOPCon battery is as follows:
[0048] Select an n-type monocrystalline silicon wafer with a resistivity range of 0.8-1.5ohm.cm and a minority carrier lifetime >2.5 ms, with a thickness of 170µm and a size of 166mm;
[0049] In KOH and H 2 o 2 Remove the damaged layer on the surface of the silicon wafer in the mixed solution, and then perform texturing in the KOH solution to form a pyramid texture on the surface of the silicon wafer, and the size of the pyramid texture is controlled at 1-5 µm;
[0050] After the suede surface is completed, the emitter is prepared by B diffusion on the front of the silicon wafer, the square resistance is 110-150 ohm.cm, the thickness of the BSG on the front is 50-120nm, and the back of the silicon wafer is alkali-polished after removing the BSG, so that the reflectivity of the back of the silicon wafer is greater than 40 %;
[0051] Alkali polishing surface (backs...
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