Method for front face protection in back face implantation of semiconductor wafer

Abstract

The invention provides a method for front face protection in back face implantation of a semiconductor wafer. A front face of the wafer is coated with a layer of photoresist before a semiconductor wafer back face manufacturing process is carried out, and the photoresist is removed after the back face manufacturing process is finished. The method specifically includes the steps: step one, providing the semiconductor wafer; step two, coating the photoresist layer onto the front face of the wafer; step three, subjecting the back face of the wafer to ion implantation; step four, removing the photoresist layer on the front face of the wafer. Compared with the prior art, the method for front face protection in back face implantation of the semiconductor wafer has the advantages that protection of a front face structure is realized by coating the front face of the semiconductor wafer with the photoresist before the semiconductor wafer is subjected to back face implantation; the method is simple, easy to implement and effective in protection, yield of semiconductor power devices is increased, and production cost is reduced.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for protecting the front side of a semiconductor wafer during injection into the back side. Background technique [0002] In the production process of semiconductor power devices, many processes involve the backside injection process. At this time, the wafer needs to be turned over for injection. When the implanter injects, the front structure is in contact with the equipment, which can easily lead to scratches on the front structure and product failure. , so that the wafer is scrapped, which not only wastes resources, but also increases production costs. At present, the general process is to grow a layer of oxide layer dielectric or SiN (silicon nitride) as a protective layer on the front to protect the front. After the back injection process is completed, the protective layer grown on the front is removed by etching. However, in the prior art, the method of ...

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Problems solved by technology

However, in the prior art, the method of using a dielectric layer to protect the front side of the semiconductor device is cumbersome, and the thermal process during the growth of the dielectric layer may affect the device junction depth or surface structure, and the removal process after implantation cannot be controlled. Too precise, which leads to differences in the structure of the front surface of the product

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