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Nanometer soldering flux, preparation method thereof, device and welding method

A welding method and nano-welding technology, applied in welding equipment, welding medium, welding/cutting medium/material, etc., can solve the problem of easy oxidation of nano-flux

Active Publication Date: 2021-05-28
SONGSHAN LAKE MATERIALS LAB +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] Based on this, it is necessary to provide a nano-flux and its preparation method, device and welding method for the problem that copper-based nano-flux is easily oxidized

Method used

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  • Nanometer soldering flux, preparation method thereof, device and welding method

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preparation example Construction

[0055] The embodiment of the present invention also provides a preparation method of nano-flux, comprising the following steps:

[0056] Mixing the protective agent, the nanomolybdenum carbide, and the solvent to obtain an antioxidant dispersion;

[0057] The nano copper powder is mixed with the anti-oxidation dispersion liquid to obtain a copper molybdenum carbide mixture.

[0058] In some embodiments, before mixing the copper powder with the anti-oxidation dispersion, a step of removing oxides on the surface of the nano-copper powder is included. The nano-copper powder can be surface-treated by ethanol containing organic acid or inorganic acid to obtain the surface-treated nano-copper powder. Preferably, the organic acid can be selected from one or more of acetic acid, oxalic acid, malonic acid, glutaric acid, lactic acid, citric acid, and the inorganic acid is one or more of dilute hydrochloric acid, dilute sulfuric acid and dilute nitric acid. Various.

[0059] In some ...

Embodiment 1

[0075] This example provides a Mo that can resist oxidation storage 2 The preparation method of C-nanometer copper flux, comprises the following steps:

[0076] Preparation of anti-oxidant dispersion: polyvinylpyrrolidone (protective agent) and ethanol (solvent) are mixed with Mo with a particle size of 6nm in a mass ratio of 1:10 2 C powder was ultrasonically mixed for 20 minutes to obtain an antioxidant dispersion. Among them, nano Mo 2 C powder is Mo prepared by temperature-rising reduction method. 2 C powder, accounting for the whole Mo 2 C - 1% of the mass of nano-copper flux; polyvinylpyrrolidone and ethanol account for the overall Mo 2 C - 19% of the mass of nano copper solder.

[0077] Surface treatment of nano-copper powder: Prepare nano-copper powder with a particle size of 40nm by polyol method, and configure 30g / L ethanol solution of citric acid.

[0078] The nano-copper powder was added into the prepared citric acid ethanol solution and subjected to ultrason...

Embodiment 2

[0081]This example provides a Mo that can resist oxidation storage 2 The preparation method of C-nanometer copper flux, comprises the following steps:

[0082] Preparation of anti-oxidant dispersion: polyvinylpyrrolidone (protective agent) and ethanol (solvent) are mixed with Mo with a particle size of 6nm in a mass ratio of 1:10 2 C powder was ultrasonically mixed for 20 minutes to obtain an antioxidant dispersion. Among them, nano Mo 2 C powder is Mo prepared by temperature-rising reduction method. 2 C powder, accounting for the whole Mo 2 C - 3% of the mass of nano copper flux; polyvinylpyrrolidone and ethanol account for the overall Mo 2 C - 17% of the mass of nano-copper flux.

[0083] Surface treatment of nano-copper powder: Prepare nano-copper powder with a particle size of 40nm by polyol method, and configure 30g / L ethanol solution of citric acid.

[0084] The nano-copper powder was added into the prepared citric acid ethanol solution and subjected to ultrasonic ...

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Abstract

The invention discloses a nanometer soldering flux which comprises a protective agent, nanometer molybdenum carbide, nanometer copper powder and a solvent. The protective agent wraps the surface of the nanometer copper powder to form a protective agent layer, the nanometer molybdenum carbide is embedded in the protective agent layer of the nanometer copper powder, and the protective agent is used for protecting the nanometer copper powder from being oxidized. The invention further discloses a preparation method of the nanometer soldering flux. The invention further discloses a device which comprises a substrate and a chip, and the substrate and the chip are welded through a mixture of the nanometer soldering flux and a binding agent. The invention also discloses a welding method. The welding method comprises the following steps: applying the mixture of the nanometer soldering flux and the binding agent between the substrate and the chip, and pre-sintering for 5-120s at the pre-sintering temperature of 65-180 DEG C; and immediately increasing the temperature to the secondary sintering temperature for secondary sintering after pre-sintering is finished, wherein the secondary sintering temperature ranges from 250 DEG C to 320 DEG C, and the secondary sintering time ranges from 5 min to 30 min.

Description

technical field [0001] The invention relates to the technical field of nanomaterials for electronic packaging and interconnection, in particular to nano flux and its preparation method, device and welding method. Background technique [0002] With the commercial breakthrough of 5G communication technology, the performance requirements of electronic devices are also continuously improved, and higher requirements are put forward for device power and stability. Due to the third-generation semiconductor silicon carbide, gallium nitride has the advantages of high breakdown electric field strength, good thermal stability, and high carrier saturation drift speed. It has application advantages in high-power devices, and its maximum operating temperature can reach 600 ° C. And high stability in high temperature environment. Its working temperature poses a huge challenge to chip interconnection materials and processes, and it is urgent to develop a good interconnection material syste...

Claims

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Application Information

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IPC IPC(8): B23K35/363B23K1/00
CPCB23K35/362B23K1/0008
Inventor 袁朝城张安平陈昭铭殷鸿杰刘鸣然罗惠馨
Owner SONGSHAN LAKE MATERIALS LAB
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