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Surface metallization process of dielectric ceramic filter

A technology of dielectric ceramics and surface metals, which is applied in the field of surface metallization of dielectric ceramic filters, can solve problems such as air bubbles or membrane base separation, insufficient adhesion of membrane layers, and large limitations of electroplating solutions, so as to prevent oxidation and improve Effect of surface cleanliness and process time reduction

Active Publication Date: 2021-05-11
SOUTHWESTERN INST OF PHYSICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there are serious wastewater treatment problems in the hybrid plating method. The limitations of the electroplating solution are large, and bubbles or film base separation are easy to occur under high temperature or high current; the traditional magnetron sputtering method also has insufficient film adhesion. , the problem of high process cost

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] Example 1 with BaTi 4 o 9 Surface Metallization of Dielectric Ceramic Filter as Substrate

[0035] Step (1), BaTi 4 o 9 The ceramic block workpiece is immersed in acetone and ultrasonically cleaned for 20 minutes, dried and then immersed in absolute ethanol for 20 minutes;

[0036] Step (2), dry the ceramic block workpiece after ultrasonic cleaning, put it in a muffle furnace and bake it at 200°C for 2h, then keep it at 80°C for 8h, and set it aside;

[0037] Step (3), put the ceramic block workpiece into the furnace and start vacuuming, and the vacuum degree enters 1×10 -3 Turn on the heating power after Pa, the rotation mode of the ceramic block workpiece is continuous revolution, set the heating temperature to 150°C, keep warm for 30 minutes after the temperature reaches 150°C, remove the air adsorbed on the inner wall of the vacuum chamber, and increase the vacuum degree;

[0038] Step (4), the vacuum degree enters 9×10 -4 After Pa, argon gas was introduced, a...

Embodiment 2

[0043] Embodiment 2 uses (Zr, Sn)TiO 4 Surface Metallization of Dielectric Ceramic Filter as Substrate

[0044] Step (1), (Zr, Sn)TiO 4 The ceramic block workpiece is immersed in acetone and ultrasonically cleaned for 20 minutes, dried and then immersed in absolute ethanol for 20 minutes;

[0045] Step (2), dry the ceramic block workpiece after ultrasonic cleaning, put it in a muffle furnace and bake it at 200°C for 2h, then keep it at 80°C for 8h, and set it aside;

[0046] Step (3), put the ceramic block workpiece into the furnace and start vacuuming, and the vacuum degree enters 1×10 -3 Turn on the heating power after Pa, the rotation mode of the ceramic block workpiece is continuous revolution, set the heating temperature to 150°C, keep warm for 30 minutes after the temperature reaches 150°C, remove the air adsorbed on the inner wall of the vacuum chamber, and increase the vacuum degree;

[0047] Step (4), the vacuum degree enters 9×10 -4 After Pa, argon gas was introd...

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Abstract

The invention belongs to the field of nonmetal surface metallization, and particularly relates to a surface metallization process of a dielectric ceramic filter. The surface metallization process comprises the following steps of ultrasonically cleaning the dielectric ceramic filter by using an organic solvent; carrying out high-temperature baking and heat preservation; then charging into a furnace, vacuumizing, heating and preserving heat; introducing argon into the furnace, and starting a Hall ion source to carry out sputtering cleaning on the surface of the dielectric ceramic filter; stopping introducing argon, and injecting metal ions into the surface of the dielectric ceramic filter by adopting a high-energy pulse ion injection method and a metal target; adopting a magnetron sputtering method, introducing argon and reducing gas, adoptinng a metal target, and depositing a metal layer on the surface of the metal layer subjected to ion implantation; and continuously introducing argon, and taking out the dielectric ceramic filter from the furnace after the dielectric ceramic filter is cooled. By means of the process, the film-substrate binding force between the ceramic substrate and a surface metal conductive coating can be effectively improved, and the dielectric ceramic filter obtained after metallization treatment has good electrical performance.

Description

technical field [0001] The invention belongs to the field of non-metallic surface metallization, and in particular relates to a surface metallization process of a dielectric ceramic filter. Background technique [0002] When a communication system selects a channel, the receiving end should have as high a signal-to-noise ratio as possible, and the sending end should generate as little interference as possible in adjacent frequency bands, so high-performance filters and resonators are essential. Because of this, in the increasingly crowded spectrum range and more complex electromagnetic environment, the importance of microwave filters that can realize functions such as signal frequency selection and denoising is increasing day by day. A typical base station filter is a dielectric resonator filter, which is different from the traditional metal cavity filter. The dielectric resonator filter is made by loading a dielectric resonator with a microwave dielectric ceramic material w...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/02C23C14/18C23C14/35C23C14/48
CPCC23C14/02C23C14/021C23C14/022C23C14/48C23C14/35C23C14/185C23C14/3457Y02P10/20
Inventor 唐德礼陈美艳刘旋刘彤
Owner SOUTHWESTERN INST OF PHYSICS
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