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Crystalline silicon cutting fluid and its preparation method and application

A technology for crystalline silicon cutting and silicon wafers, which is used in manufacturing tools, stone processing equipment, lubricating compositions, etc., and can solve the problems of weak chip-carrying ability, large TTV and high temperature.

Active Publication Date: 2022-04-01
CHANGZHOU SHICHUANG ENERGY CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] At present, the crystalline silicon cutting fluid used at home and abroad is mostly composed of ordinary polyether or acetylenic alcohol and a certain amount of defoamer. Although the existing cutting fluid can play a certain role in wetting and defoaming, it is used for cutting M12 crystalline silicon. The wettability is still lacking, the dynamic surface tension is not low enough, the ability to carry chips is weak, and it is easy to cause problems such as excessive surface friction, high temperature, and large TTV during cutting.

Method used

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  • Crystalline silicon cutting fluid and its preparation method and application
  • Crystalline silicon cutting fluid and its preparation method and application
  • Crystalline silicon cutting fluid and its preparation method and application

Examples

Experimental program
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Effect test

Embodiment 1

[0059] Prepare 1000g of cutting fluid suitable for M12 crystal silicon (15-inch silicon wafer), the composition of the raw materials is as follows:

[0060] Take 200g of polymer block polyether, 100g of alcohol wetting agent A, 50g of alcohol wetting agent B, and 650g of deionized water;

[0061] Stir at room temperature for 5 minutes until clear and transparent;

[0062] Pour the prepared cutting fluid into a slicer at room temperature and mix it with water at a ratio of 1:300. Cut with 43 wires. The silicon rod is a square rod or quasi-square rod of 210mm×210mm. The length of the whole silicon rod is about 850mm. It takes 90 minutes to cut silicon wafers with a size of 210mm×210mm.

Embodiment 2

[0064] Prepare 1000g of cutting fluid suitable for M12 crystal silicon (15-inch silicon wafer), the composition of the raw materials is as follows:

[0065] Take 150g of polymer block polyether, 120g of alcohol wetting agent A, 30g of alcohol wetting agent B, and 700g of deionized water;

[0066] Stir at room temperature for 5 minutes until clear and transparent;

[0067] Pour the prepared cutting fluid into a slicer at room temperature and mix it with water at a ratio of 1:300. Cut with 43 wires. The silicon rod is a square rod or quasi-square rod of 210mm×210mm. The length of the whole silicon rod is about 850mm. It takes 90 minutes to cut silicon wafers with a size of 210mm×210mm.

Embodiment 3

[0069] Prepare 1000g of cutting fluid suitable for M12 crystal silicon (15-inch silicon wafer), the composition of the raw materials is as follows:

[0070] Take 250g of polymer block polyether, 150g of alcohol wetting agent A, 20g of alcohol wetting agent B, and 580g of deionized water;

[0071] Stir at room temperature for 5 minutes until clear and transparent;

[0072] Pour the prepared cutting fluid into a slicer at room temperature and mix it with water at a ratio of 1:300. Cut with 43 wires. The silicon rod is a square rod or quasi-square rod of 210mm×210mm. The length of the whole silicon rod is about 850mm. It takes 90 minutes to cut silicon wafers with a size of 210mm×210mm.

[0073] The relevant experimental data of each embodiment of the present invention are as follows:

[0074] 43 wire cutting experimental data

[0075] Example Delivery rate Yield TTV Line mark silicon fall Failure rate Dirty condition Spill Example 1 99.80％ 99.3...

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Abstract

The invention discloses a crystal silicon cutting fluid, the components of which include polymer block polyether, alcohol wetting agent A and alcohol wetting agent B; the polymer block polyether is ethylene oxide, epoxy Block copolymer of propane and butylene oxide; Alcohol wetting agent A is alcohol modified by ethylene oxide and propylene oxide; Alcohol wetting agent B is ethylene oxide and propylene oxide and butylene oxide modified acetylenic diol ethoxylates. The crystalline silicon cutting fluid of the present invention has excellent wetting, cooling, lubricating, cleaning, chip-carrying and low-foaming properties, as well as good permeability and antibacterial properties, and can be recycled; the crystalline silicon cutting fluid of the present invention can effectively reduce The TTV on the surface of the silicon wafer can reduce the line mark, reduce the friction between the diamond wire and the silicon wafer surface, and improve the first-grade product rate; the crystal silicon cutting fluid of the present invention can also effectively protect the diamond wire, reduce the wear of the diamond wire, and improve the diamond wire’s wear resistance. Durability, thereby increasing productivity and economic efficiency.

Description

technical field [0001] The invention relates to the field of photovoltaics, in particular to a crystalline silicon cutting fluid and a preparation method and application thereof. Background technique [0002] Zhonghuan Co., Ltd. has launched the 15-inch ultra-large silicon wafer "Kuafu" M12 series. The side length of M12 is 210mm and the diagonal is 295mm. Compared with the original 8-inch M2 silicon wafer, the surface area has increased by 80.5%, and the surface area of ​​G1 (158.75mm) silicon wafer has increased by 75%. %, compared with M4 (161.7mm) silicon wafer surface area increased by 71%, compared with M6 (166mm) silicon wafer surface area increased by 61%, greatly reducing LCOE (degree of electricity cost), will increase the profits of manufacturing enterprises. [0003] At present, the silicon wafer cutting process in the photovoltaic field mostly uses diamond wire cutting, which is a process in which silicon carbide micropowder is directly plated on a steel wire, a...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C10M173/02B28D5/00C10N30/06C10N30/04C10N30/18C10N30/16
CPCC10M173/02B28D5/0076C10M2209/107C10M2209/104C10M2209/105C10M2209/106C10M2207/04
Inventor 邓舜马琦雯
Owner CHANGZHOU SHICHUANG ENERGY CO LTD
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