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Preparation method of side incidence type SOI-based Si/SiGe HPT with photonic crystal structure

A photonic crystal, n-type technology, applied in semiconductor devices, final product manufacturing, sustainable manufacturing/processing, etc., can solve problems affecting performance and achieve low cost, easy implementation, and efficient absorption

Active Publication Date: 2021-03-19
BEIJING UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As one of the core devices of the optical interconnection system, the performance of the photodetector also affects the performance of the entire system. The traditional vertical incidence Si / SiGe HPT is proportional to the thickness of the absorbing layer There is a contradiction between high-speed work

Method used

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  • Preparation method of side incidence type SOI-based Si/SiGe HPT with photonic crystal structure
  • Preparation method of side incidence type SOI-based Si/SiGe HPT with photonic crystal structure
  • Preparation method of side incidence type SOI-based Si/SiGe HPT with photonic crystal structure

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preparation example Construction

[0027] The invention provides a method for preparing a side-incidence SOI-based Si / SiGe HPT with a photonic crystal structure that takes into account both high-efficiency absorption and high-speed operation, comprising the following steps:

[0028] (1) On SOI substrate 1 (101-Si substrate; 102-SiO 2 Layer) on the epitaxial Si sub-collector region 2, Si collector region 3, Si x Ge 1-x Base region 4, polycrystalline Si emitter region 5.

[0029] (2) Fabricate the photonic crystal structure 7 .

[0030] (3) Etching the base area and the mesa of the collector area.

[0031] (4) Deposit an insulating layer.

[0032] (5) Etching the contact hole.

[0033] (6) Metal electrodes 6 (601—collector electrode; 602—base electrode; 603—emitter electrode) are fabricated by photolithography to form ohmic contacts.

Embodiment 1

[0035] The invention provides a method for preparing a side-incidence SOI-based Si / SiGe HPT with a photonic crystal structure that takes into account both high-efficiency absorption and high-speed operation, comprising the following steps:

[0036] (1) Select a (100) Si wafer with a diameter of 4 inches, with a thickness of about 150um, perform oxygen ion implantation in the Si wafer to form a high-concentration oxygen implantation layer, and then perform high-temperature annealing to make the implanted oxygen and silicon Reaction to form SiO 2 Insulating layer, and finally get the SOI substrate through grinding and polishing. The n-type Si sub-collector region 2 and the n-type Si collector region 3 are successively grown on the SOI silicon wafer by low-pressure chemical vapor deposition (LPCVD), with thicknesses of 300nm and 600nm respectively, SiH 4 As Si source, the growth temperature is 700°C; As is used as n-type doping impurity source. Next, p-type Si is grown on the n...

Embodiment 2

[0043] The invention provides a method for preparing a side-incidence SOI-based Si / SiGe HPT with a photonic crystal structure that takes into account both high-efficiency absorption and high-speed operation, comprising the following steps:

[0044] (1) Select two Si wafers with a diameter of 4 inches (100) and a thickness of about 100um. Thermally oxidize, bond, and anneal the two wafers, and finally grind and polish them to about 15um to obtain an SOI substrate. The n-type Si sub-collector region 2 and the n-type Si collector region 3 were successively grown on the SOI silicon wafer by low-pressure chemical vapor deposition (LPCVD), with thicknesses of 300nm and 600nm respectively, SiH 4 As Si source, the growth temperature is 700°C; As is used as n-type doping impurity source. Then use reduced pressure chemical vapor deposition (RPCVD) to grow p-type Si on the n-type Si collector region 3 0.8 Ge 0.2 Base region 4, the thickness is 100nm, and the reaction source is SiH 4 a...

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Abstract

The invention discloses a preparation method of a side-incident SOI-based Si / SiGe HPT with a photonic crystal structure, and belongs to the technical field of semiconductors. The preparation method comprises the following steps: preparing an SOI-based Si / SiGe HPT epitaxial material on an SOI substrate, preparing the photonic crystal structure, etching to form a base region and a collector region table top, performing epitaxy of a passivation layer, etching of an electrode contact hole, and manufacturing a metal electrode. Compared with a traditional Si / SiGe HPT, theside-incident SOI-based Si / SiGe HPT has the advantages that incident light is trapped in the device by utilizing point defect and line defect characteristics of the photonic crystal, so that the light absorption rate of the device is improved, and meanwhile, compared with a vertical incidence mode, the light absorption length of the device can be increased under the condition that the thickness of an absorption layer is notchanged by adopting a mode of light incidence from the side surface; and the light absorptivity of the device is also improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a method for preparing a side-incidence SOI-based Si / SiGe HPT with a photonic crystal structure. Background technique [0002] With the further development of the information society and the arrival of the era of big data, compared with the traditional electrical interconnection technology, the optical interconnection technology has a great impact on the transmission capacity, communication speed, signal delay, transmission distance and power consumption in the data transmission and processing links. Has many advantages. It has become a consensus to replace electrical interconnection with optical interconnection. Silicon-based optical interconnect technology is considered to be the most promising solution. As one of the core devices of the optical interconnection system, the performance of the photodetector also affects the performance of the entire system. T...

Claims

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Application Information

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IPC IPC(8): H01L31/18H01L31/0232H01L31/11
CPCH01L31/1804H01L31/11H01L31/02327Y02P70/50
Inventor 谢红云刘先程向洋郭敏沙印张万荣
Owner BEIJING UNIV OF TECH
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