Multi-layer phase change film based on alternate stacking of germanium antimony telluride and IV group telluride and application thereof

Abstract

The invention relates to a multilayer phase change film based on alternate stacking of germanium antimony telluride and group IV telluride and application of the multilayer phase change film, the multilayer phase change film comprises phase change layers and barrier layers, the phase change layers and the barrier layers are alternately stacked, wherein there are at least two phase change layers, and there is at least one barrier layer; the phase change layers are germanium antimony telluride films, and the barrier layers are group IV telluride films. Germanium-antimony-tellurium materials andIV-group telluride materials in the film are stacked alternately, germanium-antimony-tellurium serves as a phase change layer to achieve storage, the IV-group telluride materials serve as a blocking layer not to participate in phase change, structural relaxation of the phase change layer materials can be inhibited, the element segregation phenomenon of the phase change layer materials can be hindered, and the stability and accuracy of the phase change memory device can be greatly improved; meanwhile, the germanium-antimony-tellurium material has a relatively high crystallization temperature, so stable service in a high-temperature environment can be ensured. The film can be applied to the fields of phase change memories and brain-like computing chips.

Description

technical field [0001] The invention relates to the technical field of phase-change memory and brain-inspired computing chips, in particular to a multilayer phase-change film based on alternating stacking of germanium, antimony, telluride and group IV telluride and its application. Background technique [0002] In today's information society, the pressure brought by data storage and processing is increasing day by day. The vigorous development of emerging technologies such as big data, cloud computing, and artificial intelligence has also posed great challenges to the performance of existing computing devices. In the face of the imminent data storage crisis, researchers have proposed a variety of new materials and new technologies capable of data storage, in order to achieve a new generation of storage technology for fast reading and writing and stable data storage in the same unit, which is based on phase change The phase change memory of materials has the advantages of lo...

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Problems solved by technology

[0003] At present, phase change memory products based on germanium antimony tellurium materials have entered the commercial stage, but the devices at this stage still have shortcomings in terms of stability, accuracy and service life, which hinders their application in general-purpose memories and brain-inspired computing chips. On the one hand, the complex structure of the phase change material itself enhances the Peierls deformation, which in turn triggers structural relaxation, resulting in spontaneous resistance drift and large resistance noise, which reduces the stability and precision of the device. On the other hand, elements will migrate during the phase transition process, resulting in a certain degree of element segregation and even voids, which will lead to device failure and shorten the service life of the device; at the same time, because electronic chips are often In service, phase change materials with low crystallization temperature such as antimony tellurium cannot serve stably at high temperatures

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