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M12 large-size silicon wafer cutting process

A silicon wafer cutting and large-size technology, which is applied in the field of M12 large-size silicon wafer cutting process, can solve the problems of decreased production efficiency, increased difficulty of silicon wafer cutting end, and increased cost, so as to reduce the cost of slicing and reduce abnormal edge chipping. Poor, the effect of reducing the number of commutations

Active Publication Date: 2020-08-14
乐山高测新能源科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

With the continuous development and changes of the photovoltaic market and the intensification of market competition, it is hoped that the power of modules can be increased by expanding the size of silicon wafers to obtain product competitiveness; however, the difficulty of producing larger-sized silicon wafers will increase significantly for the cutting end of silicon wafers , the production efficiency will also decrease and the cost will increase; therefore, reducing costs and increasing efficiency, improving the quality of silicon wafers, and the process is an important key factor in cutting applications. It is important to invent a cutting process suitable for M12 large-size silicon wafers significance

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] A kind of M12 large-size silicon chip cutting process, comprises the following steps:

[0031] S1: sticking rod: select the qualified silicon rod with a size of 210*210mm, use a curing agent to bond the silicon rod to the workpiece plate for curing, the curing time is 3 hours, and the room temperature is 23-28°C;

[0032] S2: Loading rods: use the loading car to load the silicon rods into the clamping guide rail of the workbench of the cutting machine to ensure that the silicon rods are clamped normally in the clamping guide rails of the workbench;

[0033] S3: Add cutting fluid: The cutting fluid is a mixture of coolant and pure water. Take the cutting fluid and stir it evenly, and add it to the liquid supply tank of the multi-wire cutting machine for later use. The volume ratio of coolant to pure water is 1.5L: 250L;

[0034] S4: Preheating before cutting: Turn on the cutting fluid flow rate of 165L / min, set the diamond wire running speed at 1800m / min, perform recipr...

Embodiment 2

[0042] A kind of M12 large-size silicon chip cutting process, comprises the following steps:

[0043] S1: sticking rod: select the qualified silicon rod size 210*210mm, the length of the silicon rod is 650mm, use the curing agent to bond the silicon rod on the workpiece plate for curing, the curing time is 3 hours, and the room temperature is 23-28 ℃;

[0044] S2: Loading rods: use the loading car to load the silicon rods into the clamping guide rail of the workbench of the cutting machine to ensure that the silicon rods are clamped normally in the clamping guide rails of the workbench;

[0045] S3: Add cutting fluid: The cutting fluid is a mixture of coolant and pure water. Take the cutting fluid and stir it evenly, and add it to the liquid supply tank of the multi-wire cutting machine for later use. The volume ratio of coolant to pure water is 2.0L: 300L;

[0046] S4: Preheating before cutting: Turn on the cutting fluid flow rate of 180L / min, set the diamond wire running sp...

Embodiment 3

[0055] A kind of M12 large-size silicon chip cutting process, comprises the following steps:

[0056] S1: sticking rod: select the qualified silicon rod size 210*210mm, the length of the silicon rod is 650mm, use the curing agent to bond the silicon rod on the workpiece plate for curing, the curing time is 3 hours, and the room temperature is 23-28 ℃;

[0057] S2: Loading rods: use the loading car to load the silicon rods into the clamping guide rail of the workbench of the cutting machine to ensure that the silicon rods are clamped normally in the clamping guide rails of the workbench;

[0058] S3: Add cutting fluid: The cutting fluid is a mixture of coolant and pure water. Take the cutting fluid and stir it evenly, and add it to the liquid supply tank of the multi-wire cutting machine for later use. The volume ratio of coolant to pure water is 2.0L: 350L;

[0059] S4: Preheating before cutting: Turn on the cutting fluid flow rate of 170L / min, set the diamond wire running sp...

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PUM

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Abstract

The invention relates to an M12 large-size silicon wafer cutting process, and belongs to the technical field of crystalline silicon processing. The M12 large-size silicon wafer cutting process comprises the following steps of performing rod adhesion, namely fixing a silicon rod and a workpiece plate; performing feeding, namely assembling the silicon rod and the workpiece plate into a cutting machine to be cut; adding cutting fluid, namely adding the cutting liquid into the cutting machine; performing preheating before cutting, namely opening the cutting liquid and a wire net, and performing reciprocating wiring; cutting, namely setting cutting parameters and cutting the silicon rod; and performing blanking, namely setting retracting parameters, and enabling the silicon rod to be graduallyseparated from the wire net. According to the M12 large-size silicon wafer cutting process, a wear condition of a diamond wire can be reduced, the abnormal and bad edge breakage of the adhesive surface of the silicon wafer is effectively reduced, the diamond wire consumption is reduced, and the M12 large-size silicon wafer cutting process has the characteristics that the phenomenon of edge breakage of the silicon wafer is remarkably reduced and the slicing cost is reduced.

Description

technical field [0001] The invention belongs to the technical field of crystal silicon processing, and in particular relates to an M12 large-size silicon chip cutting process. Background technique [0002] At present, the photovoltaic market is on the silicon wafer side, and M12 (210mm) large-size silicon wafers are becoming the development trend of the industry. The increase in the size of silicon wafers can increase the output of battery and module production lines, reduce production costs per watt, and directly increase component power. At present, M2 wafer size (side distance 156.75mm) is the mainstream in the industry; in order to improve module power and reduce production costs and other factors, silicon wafer size has changed to M4 (158.75) and M6 (166mm). With the continuous development and changes of the photovoltaic market and the intensification of market competition, it is hoped that the power of modules can be increased by expanding the size of silicon wafers t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B28D5/04B28D7/04B28D7/02B28D7/00
CPCB28D5/042B28D5/0064B28D5/0058B28D5/0082B28D5/0076
Inventor 邢旭刘云强李璐
Owner 乐山高测新能源科技有限公司
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