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Battery edge passivation method

An edge and battery technology, applied in circuits, electrical components, photovoltaic power generation, etc., can solve the problems of reducing the performance of small cells, increasing the loss of electrical performance, and damage to the edges of small cells, so as to improve photoelectric conversion efficiency, improve power generation performance, The effect of no pollution in the process

Active Publication Date: 2022-05-31
CHANGZHOU SHICHUANG ENERGY CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The cutting process is usually completed by laser cutting process, because the laser processing process will cause damage to the edge of the cut small cell, especially the doped junction (PN junction or high-low junction) or passivation contact structure (TOPCon) on the front and back of the cell. battery) is exposed and accompanied by the damage of this laser cutting process, and the edge surface of the small battery after cutting is not protected by any passivation layer, which will significantly reduce the performance of the small battery, thereby further increasing the Loss of electrical performance of their assembly into components

Method used

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  • Battery edge passivation method

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Embodiment 1

[0038] Embodiment 1 discloses a battery edge passivation method, which is used in the preparation process of the battery. This step can be considered to be arranged after the silicon substrate emitter junction is completed, and the front and back coatings (anti-reflection film and passivation film) are prepared. Before, it does not affect the other steps of battery fabrication. Specifically include the following steps:

[0039] A1: After the phosphorus emitter junction (or boron emitter junction) is fabricated on the silicon substrate, the chemical etching process of wet edge removal is used to make the phosphorous silicate glass (or borosilicate glass), oxide layer and emitter junction on the edge of the silicon wafer They are all etched away as completely as possible, so that the silicon at the edge of the silicon substrate is exposed.

[0040] It should be noted that in the present invention, the oxidant needs to react with the exposed silicon on the surface of the crystal...

Embodiment 2

[0045] Embodiment 2 discloses a battery edge passivation method for the battery edge passivation after cutting, which specifically includes the following steps:

[0046] B1: Select a 156 mm*156 mm p-type monocrystalline silicon cell, and laser-cut the cell to form a half-cell (also called a half-cell). Of course, it can also be cut pieces such as one-third, one-quarter, ..., one-Nth, etc.

[0047] B2: The cutting edge of the laser-cut half-chip is contacted with an ozone aqueous solution, and under the condition of photocatalytic oxidation, a silicon oxide film with a thickness of 15 nm is promoted on the exposed silicon surface of the edge of the cell. Among them, the formula of the chemical solution is: 0.57 g / L ozone solution; the solution temperature is 20 °C; the light source can be a dual-spectrum ultraviolet lamp with a power of 150 W, and the wavelengths are ultraviolet light of 185 nm and 254 nm; the time of contact and irradiation is 10 minutes.

[0048] B3: After ...

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Abstract

The invention discloses a battery edge passivation method. One side of the crystalline silicon battery to be passivated is contacted with a chemical solution containing an oxidant, and ultraviolet light is used to irradiate the contact surface between the side and the chemical solution, so that Under photocatalytic oxidation conditions, a layer of silicon oxide passivation film is formed on the side; the oxidant is hydrogen peroxide or ozone; all sides to be passivated are formed with a silicon oxide passivation film, and then heat treatment is performed on the completed crystalline silicon battery , to improve the density of the silicon oxide passivation film. Further, the present invention also discloses the application of the above method. The invention utilizes the photocatalytic oxidation technology to passivate the edge of the crystalline silicon solar cell, thereby reducing electrical recombination and leakage at the edge of the cell, and improving the photoelectric conversion efficiency of the cell.

Description

technical field [0001] The invention belongs to the technical field of crystalline silicon solar cell preparation, and in particular relates to a method for realizing cell edge passivation. Background technique [0002] Monolithic solar cells need to be fabricated into modules in series and parallel to be applied to photovoltaic systems. Since the recombination and leakage at the edge of the solar cell are relatively more serious than other areas of the cell, this will affect the electrical performance of the single solar cell and modules, which in turn affects the power generation performance (power generation, stability, reliability, and reliability) of the photovoltaic system. sex, etc.). Therefore, it is necessary to electrically isolate and passivate the edge of the solar cell to reduce leakage and electrical recombination at the edge of the cell. [0003] At present, in the processing and manufacturing of crystalline silicon solar cells in the industry, chemical etch...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18H01L31/068
CPCH01L31/1804H01L31/1868H01L31/068Y02P70/50
Inventor 黄海冰吴智涵绪欣曹育红沈梦超张胜军张梦葛
Owner CHANGZHOU SHICHUANG ENERGY CO LTD
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