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Method for enhancing ohmic contact of gallium oxide semiconductor device

A technology of ohmic contact and gallium oxide, which is applied in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of difficult control of ohmic contact depth, great influence of ohmic contact annealing time and temperature, high annealing temperature, etc. , to achieve the effect of good flatness, low annealing temperature and low roughness

Inactive Publication Date: 2020-06-05
NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The ohmic contact formed by this method is greatly affected by the annealing time and temperature, and requires a high annealing temperature. The particle size, roughness of the metal surface, and the depth of the ohmic contact between the metal and the semiconductor are not easy to control.

Method used

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  • Method for enhancing ohmic contact of gallium oxide semiconductor device
  • Method for enhancing ohmic contact of gallium oxide semiconductor device
  • Method for enhancing ohmic contact of gallium oxide semiconductor device

Examples

Experimental program
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Effect test

Embodiment 1

[0050] A method for enhancing the ohmic contact of a gallium oxide semiconductor device, comprising the following steps:

[0051] (1) Use a photolithography process to define a pattern that needs to enhance the ohmic contact area on the upper surface of the gallium oxide substrate 1, expose the defined area on the upper surface of the gallium oxide substrate 1, and cover the remaining area with a photoresist to form ions Implanted with photoresist layer 2, as figure 1 shown;

[0052] (2) Implant silicon dopant ions on the upper surface of the gallium oxide substrate 1 with a doping concentration of 2.5×10 15 cm -3, the process of doping ions adopts an ion implantation process to form an ion implantation layer 3, such as figure 2 shown;

[0053] (3) After the ion implantation is completed, remove the photoresist on the upper surface of the gallium oxide substrate, such as image 3 shown;

[0054] (4) Perform heat treatment on the gallium oxide substrate that has been ion...

Embodiment 2

[0060] A method for enhancing the ohmic contact of a gallium oxide semiconductor device, comprising the following steps:

[0061] (1) Use a photolithography process to define a pattern that needs to enhance the ohmic contact area on the upper surface of the gallium oxide substrate 1, expose the defined area on the upper surface of the gallium oxide substrate 1, and cover the remaining area with a photoresist to form ions Implanted with photoresist layer 2, as figure 1 shown;

[0062] (2) Implanting platinum dopant ions on the upper surface of the gallium oxide substrate 1 with a doping concentration of 1×10 15 cm -3 , the process of doping ions adopts an ion implantation process to form an ion implantation layer 3, such as figure 2 shown;

[0063] (3) After the ion implantation is completed, remove the photoresist on the upper surface of the gallium oxide substrate, such as image 3 shown;

[0064] (4) Perform heat treatment on the gallium oxide substrate that has been ...

Embodiment 3

[0070] A method for enhancing the ohmic contact of a gallium oxide semiconductor device, comprising the following steps:

[0071] (1) Use a photolithography process to define a pattern that needs to enhance the ohmic contact area on the upper surface of the gallium oxide substrate 1, expose the defined area on the upper surface of the gallium oxide substrate 1, and cover the remaining area with a photoresist to form ions Implanted with photoresist layer 2, as figure 1 shown;

[0072] (2) Zinc doping ions are implanted on the upper surface of the gallium oxide substrate 1 with a doping concentration of 5×10 16 cm -3 , the process of doping ions adopts an ion implantation process to form an ion implantation layer 3, such as figure 2 shown;

[0073] (3) After the ion implantation is completed, remove the photoresist on the upper surface of the gallium oxide substrate, such as image 3 shown;

[0074] (4) Perform heat treatment on the gallium oxide substrate that has been i...

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Abstract

The invention relates to a method for enhancing the ohmic contact of a gallium oxide semiconductor device. The method comprises the following steps of defining a pattern of which an ohmic contact region needing to be enhanced on the upper surface of a gallium oxide substrate by adopting a photoetching process, exposing the region, and shielding the residual region by using a photoresist; injectingthe doping ions into the upper surface of the substrate; removing the photoresist on the upper surface of the gallium oxide substrate; performing heat treatment; defining and forming a pattern of a metal electrode region by adopting the photoetching process, exposing the region, and shielding other regions by using the photoresist; forming a metal electrode on the upper surface of the gallium oxide substrate; removing the photoresist on the upper surface of the gallium oxide substrate; carrying out the fast annealing treatment. According to the method for enhancing the ohmic contact of the gallium oxide semiconductor device, the doping range, the concentration and the depth of the ohmic contact region can be accurately controlled, the preparation process is simple, the ohmic contact of the gallium oxide semiconductor device can be effectively enhanced in combination with thermal annealing treatment after injection, and the gallium oxide semiconductor device with good ohmic contact isformed.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, in particular to a method for enhancing the ohmic contact of a gallium oxide semiconductor device. Background technique [0002] Gallium oxide is a new type of wide-bandgap semiconductor material. It has five isomers, namely α-type, β-type, γ-type, δ-type and ε-type. Among them, the β-type gallium oxide has the best thermodynamic stability. , and has been extensively studied. Gallium oxide has an ultra-wide band gap of 4.6-4.9eV, and its theoretical breakdown electric field reaches 8MV / cm, which is three times larger than that of silicon carbide and gallium nitride. Due to the material properties of gallium oxide, it has the ability to produce high withstand voltage, high power, low loss power devices and deep ultraviolet photoelectric devices, which can well make up for the existing semiconductors such as silicon, gallium arsenide, gallium nitride, and silicon carbide. Insufficient mate...

Claims

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Application Information

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IPC IPC(8): H01L21/44H01L29/45H01L21/34
CPCH01L21/44H01L29/45H01L29/66969
Inventor 邵国键
Owner NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
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