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Low-cost silver-based bonding alloy wire and preparation method and application thereof

An alloy wire and bonding technology, which is applied in semiconductor/solid-state device manufacturing, circuits, electric solid-state devices, etc., can solve the problem of unstable elongation of Ag-Au-Pd system bonding wire, affecting cost control, and affecting bonding Efficiency and other issues, to achieve the effect of stable and cheap market price, enhanced elongation, and improved oxidation resistance

Inactive Publication Date: 2020-04-28
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in practical applications, the inhomogeneous solid solution of Pd and Au in the silver substrate will make the elongation of the Ag-Au-Pd system bonding wire unstable, causing abnormal disconnection and affecting the bonding efficiency; Ag-Au-Pd The bonding wire of the system cannot use solid-solution high-content Pd (increased resistivity) to achieve high breaking load to meet low arc bonding; in addition, the price fluctuation of Au and the increase of Pd price affect the cost control

Method used

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  • Low-cost silver-based bonding alloy wire and preparation method and application thereof
  • Low-cost silver-based bonding alloy wire and preparation method and application thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0023] This embodiment provides a specific implementation of a silver-based bonding alloy wire, as follows:

[0024] (1) Melting and casting: put 995.0g of Ag with a purity of 99.99%, 5.0g of Cu with a purity of 99.99%, and add 40ppm of Pt, 40ppm of Ce, 40ppm of Ti, 40ppm of Ni, and 40ppm of Y, and put them into the crucible together. ×10 -4 Smelting under Pa vacuum degree, the temperature of vacuum smelting is 1100 ℃, then directional and continuous casting to make alloy rods, the diameter of the alloy rods is 8mm;

[0025] (2) wire drawing: the ф8mm rod obtained in step (1) is subjected to rough drawing, middle drawing, fine drawing, and superfine wire drawing processes to obtain a silver alloy wire with a diameter of 20 μm;

[0026] (3) Annealing: the silver alloy wire obtained in step (2) is subjected to annealing heat treatment under the hydrogen-nitrogen mixed protective gas whose volume percentage of hydrogen and nitrogen is 5:95, the annealing temperature is 400°C, an...

Embodiment 2

[0029] This embodiment provides a specific implementation of a silver-based bonding alloy wire, as follows:

[0030] (1) Melting and casting: put 990.0g of Ag with a purity of 99.99%, 10.0g of Cu with a purity of 99.99%, and add Pt80ppm, Ce 80ppm, Ti 80ppm, Ni 80ppm, and Y 80ppm, and put them into the crucible together, and after mixing, it is higher than 9.8 ×10 -4 Smelting under Pa vacuum degree, the temperature of vacuum smelting is 1150 ℃, then directional and continuous casting to make alloy rods, the diameter of the alloy rods is 8mm;

[0031] (2) wire drawing: the ф8mm rod obtained in step (1) is subjected to rough drawing, middle drawing, fine drawing, and superfine wire drawing processes to obtain a silver alloy wire with a diameter of 20 μm;

[0032] (3) Annealing: the silver alloy wire obtained in step (2) is subjected to annealing heat treatment under a hydrogen-nitrogen mixed protective gas with a volume percentage of hydrogen and nitrogen of 5:95, the annealing ...

Embodiment 3

[0035] This embodiment provides a specific implementation of a silver-based bonding alloy wire, as follows:

[0036] (1) Melting and casting: Put 970.0g of Ag with a purity of 99.99%, 30.0g of Cu with a purity of 99.99%, and add 240ppm of Pt, 240ppm of Ce, 240ppm of Ti, 240ppm of Ni, and 240ppm of Y, and put them into the crucible together. ×10 -4 Smelting under Pa vacuum, the temperature of vacuum smelting is 1200°C, and then directional and continuous casting to make alloy rods, the diameter of which is 8mm;

[0037] (2) wire drawing: the ф8mm rod obtained in step (1) is subjected to rough drawing, middle drawing, fine drawing, and superfine wire drawing processes to obtain a silver alloy wire with a diameter of 20 μm;

[0038] (3) Annealing: the silver alloy wire obtained in step (2) is subjected to annealing heat treatment under the hydrogen-nitrogen mixed protective gas whose volume percentage of hydrogen and nitrogen is 5:95, the annealing temperature is 500°C, and the ...

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Abstract

The invention discloses a low-cost silver-based bonding alloy wire and a preparation method and application thereof, and belongs to the technical field of bonding wire processing. The silver-based bonding alloy wire comprises the following components in percentage by mass: 97.0-99.9wt% of Ag, 0.1-3.0wt% of Cu. The silver-based bonding alloy wire is added with the following microelements: 20-250ppmof Pt, 20-250ppm of Ce, 20-250ppm of Ti, 20-250ppm of Ni and 20-250ppm of Y. The silver-based bonding alloy wire with the wire diameter ranging from 18 micrometers to 50 micrometers is prepared through the procedures of smelting and casting, wire drawing, annealing and cooling. According to the invention, high-purity silver is used as a base material, a small amount of copper and trace alloy elements are added, the raw material cost and preparation energy consumption of the silver bonding wire are reduced, and the production line efficiency is improved. Meanwhile, high breaking load and stable elongation are provided, the mechanical stretching requirements of different electronic packages are met, the bonding abnormal wire breaking frequency is low, and excellent bonding practicability and applicability are achieved. The silver-based bonding alloy wire is suitable for miniaturized packaging of large-scale integrated circuits, and is also suitable for packaging of discrete devices.

Description

technical field [0001] The invention relates to a low-cost silver-based bonding alloy wire, a preparation method and application thereof, and belongs to the technical field of bonding wire processing. Background technique [0002] Bonding wire is a semiconductor packaging material, which is used to realize the electrical connection between semiconductor chips and pins, and plays the role of current and signal input and export. With the development of the semiconductor industry towards the sharp increase in output, miniaturization, modularization and high integration, this requires that the bonding wire has excellent mechanical properties, electrical and thermal conductivity, bonding performance and corrosion resistance in terms of performance, and has a macroscopic structure. Thinner wire diameter facilitates narrower wire spacing and lower wire loop height in wire bonding. [0003] Bonding wires are classified by components: aluminum wire, gold wire, copper wire and silver...

Claims

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Application Information

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IPC IPC(8): H01L23/492H01L21/48B22D11/00C22F1/14
CPCH01L24/43H01L24/45H01L21/4885B22D11/005B22D11/001C22F1/14H01L2224/45139H01L2924/00011H01L2924/01049
Inventor 叶志镇徐豪杰潘新花薛子夜赵义东谢海涛
Owner ZHEJIANG UNIV
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